ADMV1011AEZ [ADI]
17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter;
| 型号： | ADMV1011AEZ |
| 厂家： | 
ADI |
| 描述： | 17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter 射频 微波 |
| 文件： | 总26页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
17 GHz to 24 GHz,
GaAs, MMIC, I/Q Upconverter
ADMV1011
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
VGRF1 VCTL2 VCTL3 VGRF2 VDRF2 VDRF1
RF output frequency range: 17 GHz to 24 GHz
IF input frequency range: 2 GHz to 4 GHz
LO input frequency range: 8 GHz to 12 GHz with 2× multiplier
20 dB of image rejection
5
6
7
8
9
31
RFOUT
2
Matched 50 Ω RF output, LO input, and IF input
32-terminal, 4.9 mm × 4.9 mm LCC package
90
0
13
12
IF1
IF2
APPLICATIONS
18
LOIN
×2
Point to point microwave radios
VDLO 26
Radars and electronic warfare systems
Instrumentation, automatic test equipment
ADMV1011
Figure 1.
GENERAL DESCRIPTION
The ADMV1011 is a compact, gallium arsenide (GaAs) design,
monolithic microwave integrated circuit (MMIC), double
sideband (DSB) upconverter in an RoHS compliant package
optimized for point to point microwave radio designs that
operates in the 17 GHz to 24 GHz frequency range.
are provided and an external 90° hybrid is needed to select the
required sideband. The I/Q mixer topology reduces the need for
filtering the unwanted sideband. The ADMV1011 is a much
smaller alternative to hybrid style DSB upconverter assemblies
and it eliminates the need for wire bonding by allowing the use
of surface-mount manufacturing assemblies.
The ADMV1011 provides 21 dB of conversion gain with 20 dB
of image rejection. The ADMV1011 uses a radio frequency (RF)
amplifier preceded by an in phase/quadrature (I/Q) double
balanced mixer, where a driver amplifier drives the local
oscillator (LO) with a 2× multiplier. IF1 and IF2 mixer inputs
The ADMV1011 upconverter comes in a compact, thermally
enhanced, 4.9 mm × 4.9 mm LCC package. The ADMV1011
operates over the −40°C to +85°C temperature range.
Rev. 0
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ADMV1011* PRODUCT PAGE QUICK LINKS
Last Content Update: 11/01/2017
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• ADMV1011: 17 GHz to 24 GHz, GaAs, MMIC, I/Q
Upconverter Data Sheet
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ADMV1011
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Performance vs. LO Power........................................................ 13
Leakage and Return Loss Performance................................... 14
Spurious Performance ............................................................... 17
M × N Spurious Performance................................................... 19
Theory of Operation ...................................................................... 20
LO Driver Amplifier .................................................................. 20
Mixer............................................................................................ 20
RF Amplifier ............................................................................... 20
Applications Information.............................................................. 21
Typical Application Circuit....................................................... 21
Evaluation Board Information ................................................. 22
Bill of Materials........................................................................... 24
Outline Dimensions....................................................................... 25
Ordering Guide .......................................................................... 25
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Lower Sideband Performance..................................................... 3
Upper Sideband Performance..................................................... 4
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics ............................................. 7
Lower Sideband.............................................................................. 7
Upper Sideband ............................................................................ 9
Performance vs. Gain Regulation............................................. 11
REVISION HISTORY
10/2017—Revision 0: Initial Version
Rev. 0 | Page 2 of 25
Data Sheet
ADMV1011
SPECIFICATIONS
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, −4 dBm ≤ LO ≤ +4 dBm, −40°C ≤ TA ≤
+85°C, taken with Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2, VCTL3 = −5 V, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ Max Unit
RF OUTPUT FREQUENCY
INPUT FREQUENCY
Local Oscillator
Intermediate Frequency
LO AMPLITUDE
POWER INTERFACE
Amplifier Bias Voltage
LO
17
24
GHz
LO
IF
With 2× multiplier
8
2
12
4
GHz
GHz
dBm
−4
0
+4
VDLO
VDRF1, VDRF2
3.5
5
V
V
RF
Amplifier Bias Current
LO
RF
IDLO
IDRF1
IDRF2
VGRF1, VGRF2
160
220
75
180
300
mA
mA
mA
V
Adjust VGRF1 between −1.8 V to −0.8 V to get IDRF1
Adjust VGRF2 between −1.8 V to −0.8 V to get IDRF1
RF Amplifier Gate Control
Voltage
RF Amplifier Gain Control
Voltage
−1.8
−5
−0.8
0
VCTL2, VCTL3
Maximum gain = −5 V, minimum gain = 0 V
V
LOWER SIDEBAND PERFORMANCE
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, −4 dBm ≤ LO ≤ +4 dBm, −40°C ≤ TA ≤
+85°C, taken with Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2, VCTL3 = −5 V, unless otherwise noted.
Table 2.
Parameter
Symbol Test Conditions/Comments
Min Typ Max Unit
RF PERFORMANCE
Frequency
Radio Frequency
Local Oscillator
Intermediate Frequency
Conversion Gain
Dynamic Range
SSB Noise Figure
RF
LO
IF
17
8.5
2
14
30
20
12
4
GHz
GHz
GHz
21
33
26.5 dB
VVA
SSB NF
VVA control slope > 35 mV/dB
With hybrid at maximum gain
With hybrid at 31dB gain regulation vs. gain regulation,
gain control ≤ 25 dB
16
22
dB
dB
Output Third-Order Intercept
Output 1 dB Compression Point
Image Rejection
IP3
P1dB
At output power (POUT) = 8 dBm vs. gain regulation
31
22
20
dBm
dBm
dB
Gain regulation change from 0 dB to 31 dB
Leakage
2× LO to RF
Maximum conversion gain at 18 GHz
Maximum conversion gain at 23 GHz
Vs. gain regulation
5
5
1
dBm
dBm
dB/dB
2× LO to IF
Return Loss
RF Output
LO Input
−25 dBm
10
10
10
dB
dB
dB
LO = 0 dBm
IF Input
Rev. 0 | Page 3 of 25
ADMV1011
Data Sheet
Parameter
Symbol Test Conditions/Comments
RF frequency (fRF) = 18 GHz, IF = 0 dBm
Min Typ Max Unit
IF Input Power
3× LO – 4 × IF Spur
1× LO + 2 × IF Spur
6× IF Spur
−25
0
dBm
dBc
dBc
dBc
70
55
75
fRF = 18 GHz, IF = 0 dBm
fRF = 18 GHz, IF = 0 dBm
UPPER SIDEBAND PERFORMANCE
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, −4 dBm ≤ LO ≤ +4 dBm, −40°C ≤ TA ≤
+85°C, taken with Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2, VCTL3 = −5 V, unless otherwise noted.
Table 3.
Parameter
Symbol Test Conditions/Comments
Min Typ Max Unit
RF PERFORMANCE
Frequency
Radio Frequency
Local Oscillator
Intermediate Frequency
Conversion Gain
Dynamic Range
SSB Noise Figure
RF
LO
IF
20
8
2
14
30
24
11
4
GHz
GHz
GHz
21
33
26.5 dB
VVA
NF
VVA control slope > 35 mV/dB
With hybrid at maximum gain
With hybrid at 31 dB gain regulation vs. gain regulation,
gain control ≤ 25 dB
16
22
dB
dB
Output Third-Order Intercept
Output 1 dB Compression Point
Image Rejection
IP3
P1dB
At output power (POUT) = 8 dBm vs. gain regulation
31
22
20
dBm
dBm
dB
Gain regulation change from 0 dB to 31dB
Leakage
2× LO to RF
Maximum conversion gain at 18 GHz
Maximum conversion gain at 23 GHz
Vs. gain regulation
5
5
1
−25
dBm
dBm
dB/dB
dBm
2× LO to IF
Return Loss
RF Output
LO Input
IF Input
IF Input Power
4× LO − 5 × IF Spur
4× LO − 4 × IF Spur
3× LO − 2 × IF Spur
1× LO + 4 × IF Spur
7× IF Spur
10
10
10
0
dB
dB
dB
dBm
dBc
dBc
dBc
dBc
dBc
LO = 0 dBm
−25
RF frequency (fRF) = 23 GHz, IF = 0 dBm
fRF = 23 GHz, IF = 0 dBm
fRF = 23 GHz, IF = 0 dBm
fRF = 23 GHz, IF = 0 dBm
fRF = 23 GHz, IF = 0 dBm
70
70
60
65
75
Rev. 0 | Page 4 of 25
Data Sheet
ADMV1011
ABSOLUTE MAXIMUM RATINGS
Table 4.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Parameter
Rating
Supply Voltage
VDRF1, VDRF2
VDLO
VGRF1, VGRF2
Operating Temperature Range
Storage Temperature Range
Input Power
5.5 V
5.5 V
−2.5 V to 0 V
−40°C to +85°C
−55°C to +125°C
ESD CAUTION
LO
15 dBm
IF
15 dBm
Lead Temperature Range (Soldering 60 sec)
Electrostatic Discharge (ESD) Sensitivity
−65°C to +150°C
Field Induced Charge Device Model
(FICDM)
Human Body Model (HBM)
500 V
250 V
Rev. 0 | Page 5 of 25
ADMV1011
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
GND
RFOUT
GND
1
2
3
4
5
6
7
8
24 NIC
23
22 NIC
21 NIC
NIC
ADMV1011
TOP VIEW
(Not to Scale)
NIC
20
19
VGRF1
VCTL2
VCTL3
VGRF2
NIC
GND
18 LOIN
17 NIC
NOTES
1. NIC = NOT INTERNALLY CONNECTED. IT IS RECOMMENDED TO GROUND THESE PINS ON THE PCB.
2. EXPOSED PAD. GOOD RF AND THERMAL GROUNDING IS RECOMMENDED ON THE PCB.
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
Mnemonic
Description
1, 3, 11, 14, 19
GND
Ground. These pins are grounded internally and must be grounded on the printed
circuit board (PCB).
2
RFOUT
NIC
RF Output. This pin is ac-coupled internally and matched to 50 Ω single ended.
Not Internally Connected. It is recommended to ground these pins on the PCB.
4, 10, 15 to 17,
20 to 25, 27, 28, 30, 32
5, 8
VGRF1, VGRF2
Power Supply Voltage for the Gate of the RF Amplifier. Refer to the Applications
Information section for the required external components and biasing.
6, 7, 29
9, 31
VCTL2, VCLT3, VCTL1 Gain Control Voltage. Refer to the Applications Information section for biasing.
VDRF2, VDRF1
Power Supply Voltage for the RF Amplifier. Refer to the Applications Information section
for the required external components and biasing.
12, 13
IF2, IF1
Quadrature IF Inputs. These pins are matched to 50 Ω single ended and are dc-coupled.
No external dc blocks required.
18
26
LOIN
VDLO
Local Oscillator. This pin is ac-coupled and matched to 50 Ω single ended.
Power Supply Voltage for the LO Amplifier. Refer to the external Applications
Information section for the required external components and biasing.
EPAD
Exposed Pad. Good RF and thermal grounding is recommended on the PCB.
Rev. 0 | Page 6 of 25
Data Sheet
ADMV1011
TYPICAL PERFORMANCE CHARACTERISTICS
LOWER SIDEBAND
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, LO = 0 dBm, IF frequency = 3 GHz,
IFx pin= −10 dBm, and taken with Mini-Circuits QCN-45+ power splitter/combiner as lower sideband, unless otherwise noted. VCTL2
and VCTL3 = −5 V, unless otherwise noted.
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
17.0
17.5
18.0
18.5
19.0
19.5
20.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 6. Conversion Gain vs. IF Frequency at Various Temperatures,
RF Frequency = 18 GHz
Figure 3. Conversion Gain vs. RF Frequency at Various Temperatures
55
55
50
45
40
35
30
25
20
15
50
45
40
35
30
25
20
15
10
5
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
10
5
0
1.0
0
17.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
17.5
18.0
18.5
19.0
19.5
20.0
IF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 7. Sideband Rejection vs. IF Frequency, RF Frequency = 18 GHz
Figure 4. Sideband Rejection vs. RF Frequency at Various Temperatures
40
39
38
37
36
35
34
33
32
31
30
29
40
39
38
37
36
35
34
33
32
31
30
29
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
28
27
26
25
28
27
26
25
1.0
1.5
2.0
2.5
3.0
3.5
4.0
17.0
17.5
18.0
18.5
19.0
19.5
20.0
IF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 8. Output IP3 vs. IF Frequency at Various Temperatures,
RF Frequency = 18 GHz
Figure 5. Output IP3 vs. RF Frequency at Various Temperatures,
POUT = 12 dBm
Rev. 0 | Page 7 of 25
ADMV1011
Data Sheet
30
28
26
24
22
20
18
16
30
28
26
24
22
20
18
16
14
12
10
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
14
12
10
17.0
17.5
18.0
18.5
19.0
19.5
20.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 9. Output P1dB vs. RF Frequency at Various Temperatures
Figure 11. Output P1dB vs. IF Frequency at Various Temperatures,
RF Frequency = 18 GHz
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
4
2
4
2
0
17.5
0
–4
18.0
18.5
19.0
19.5
20.0
–3
–2
–1
0
1
2
3
4
RF FREQUENCY (GHz)
LO POWER (dBm)
Figure 10. SSB Noise Figure vs. RF Frequency at Various Temperatures
Figure 12. SSB Noise Figure vs. LO Power, RF Frequency = 18 GHz
Rev. 0 | Page 8 of 25
Data Sheet
ADMV1011
UPPER SIDEBAND
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, LO = 0 dBm, IF frequency =
3 GHz, IFx pin = −10 dBm, and taken with Mini-Circuits QCN-45+ power splitter/combiner as upper sideband, unless otherwise noted.
VCTL2 and VCTL3 = −5 V, unless otherwise noted.
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 13. Conversion Gain vs. RF Frequency at Various Temperatures
Figure 16. Conversion Gain vs. IF Frequency at Various Temperatures,
RF Frequency = 23 GHz
45
40
35
30
25
20
15
45
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
40
35
30
25
20
15
10
5
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
10
5
0
20.0
0
1.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 14. Sideband Rejection vs. RF Frequency at Various Temperatures
Figure 17. Sideband Rejection vs. IF Frequency at Various Temperatures,
RF Frequency = 23 GHz
46
44
42
40
38
36
34
32
30
28
46
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
44
42
40
38
36
34
32
30
28
26
24
22
20
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
26
24
22
20
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 15. Output IP3 vs. RF Frequency at Various Temperatures,
IF Frequencies at POUT = 12 dBm
Figure 18. Output IP3 vs. IF Frequency at Various Temperatures,
RF Frequency = 23 GHz
Rev. 0 | Page 9 of 25
ADMV1011
Data Sheet
30
28
26
24
22
20
18
30
28
26
24
22
20
18
16
14
12
10
16
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
14
12
10
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 19. Output P1dB vs. RF Frequency at Various Temperatures
Figure 21. Output P1dB vs. IF Frequency at Various Temperatures,
RF Frequency = 23 GHz
20
19
18
17
16
15
14
13
12
11
10
9
20
19
18
17
16
15
14
13
12
11
10
9
8
8
7
7
6
6
5
4
3
5
4
3
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
2
2
1
1
0
20.0
0
–4
20.5
21.0
21.5
22.0
22.5
23.0
–3
–2
–1
0
1
2
3
4
RF FREQUENCY (GHz)
LO POWER (dBm)
Figure 20. SSB Noise Figure vs. RF Frequency at Various Temperatures
Figure 22. SSB Noise Figure vs. LO Power, RF Frequency = 23 GHz
Rev. 0 | Page 10 of 25
Data Sheet
ADMV1011
PERFORMANCE vs. GAIN REGULATION
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, LO = 0 dBm, IF frequency = 3 GHz,
and taken with Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL is varied for gain regulation.
30
25
20
15
10
5
30
25
20
15
10
5
0
0
–5
–10
–15
–20
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
–5
–10
–15
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
V
(V)
V
CTL
(V)
CTL
Figure 23. Conversion Gain vs. Control Voltage (VCTL) at Various
Temperatures, RF Frequency = 18 GHz, Lower Sideband
Figure 26. Conversion Gain vs. VCTL at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
25
20
15
10
25
20
15
10
0dB
10.14dB
5
5
19.26dB
29.09dB
0dB
10.67dB
20.32dB
29.67dB
0
–5
0
–5
–10
–10
–15
17.0
–15
20.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 24. Conversion Gain vs. RF Frequency at Various Attenuation Levels,
Lower Sideband
Figure 27. Conversion Gain vs. RF Frequency at Various Attenuation Levels,
Upper Sideband
55
50
45
40
35
30
25
20
15
40
35
30
25
20
15
10
5
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
10
5
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ATTENUATION (dB)
ATTENUATION (dB)
Figure 25. Sideband Rejection vs. Attenuation at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
Figure 28. Sideband Rejection vs. Attenuation at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
Rev. 0 | Page 11 of 25
ADMV1011
Data Sheet
45
40
35
30
25
20
15
45
40
35
30
25
20
15
10
5
0dB
10.14dB
19.26dB
29.09dB
0dB
10
5
10.67dB
20.32dB
29.67dB
0
17.0
0
20.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 29. Output IP3 vs. RF Frequency at Various Attenuation Levels,
Lower Sideband
Figure 32. Output IP3 vs. RF Frequency at Various Attenuation Levels,
Upper Sideband
45
45
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ATTENUATION (dB)
ATTENUATION (dB)
Figure 30. Output IP3 vs. Attenuation at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
Figure 33. Output IP3 vs. Attenuation at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
4
2
4
2
0
–5.0
0
–5.0
–4.5
–4.0
–3.5
(V)
–3.0
–2.5
–2.0
–4.5
–4.0
–3.5
V (V)
CTL
–3.0
–2.5
–2.0
V
CTL
Figure 31. SSB Noise Figure vs. VCTL at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
Figure 34. SSB Noise Figure vs. VCTL at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
Rev. 0 | Page 12 of 25
Data Sheet
ADMV1011
PERFORMANCE vs. LO POWER
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, IF frequency = 3 GHz, and
taken with Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2 and VCTL3 = −5 V, unless otherwise noted.
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
–4
–3
–2
–1
0
1
2
3
4
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
LO POWER (dBm)
Figure 35. Conversion Gain vs. LO Power at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
Figure 38. Conversion Gain vs. LO Power at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
40
38
36
34
32
30
28
26
40
38
36
34
32
30
28
26
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
24
22
20
24
22
20
–4
–3
–2
–1
0
1
2
3
4
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
LO POWER (dBm)
Figure 39. Output IP3 vs. LO Power at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
Figure 36. Output IP3 vs. LO Power at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
30
28
26
24
22
20
18
16
30
28
26
24
22
20
18
16
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
14
12
10
14
12
10
–4
–3
–2
–1
0
1
2
3
4
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
LO POWER (dBm)
Figure 37. Output P1dB vs. LO Power at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
Figure 40. Output P1dB vs. LO Power at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
Rev. 0 | Page 13 of 25
ADMV1011
Data Sheet
LEAKAGE AND RETURN LOSS PERFORMANCE
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, LO = 0 dBm, and taken with
Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2 and VCTL3 = −5 V unless otherwise noted.
0
–10
–20
–30
–40
–50
–60
–70
0
–10
–20
–30
–40
–50
–60
–70
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
LO FREQUENCY = 12GHz
LO FREQUENCY = 8GHz
–4
–3
–2
–1
0
1
2
3
4
7
8
9
10
11
12
13
14
LO POWER (dBm)
LO FREQUENCY (GHz)
Figure 44. LO to RF Feedthrough vs. LO Power at
Various Temperatures and LO Frequencies
Figure 41. LO to RF Feedthrough vs. LO Frequency at
Various Temperatures
0
–10
–20
–30
–40
–50
–60
0
–10
–20
–30
–40
–50
–60
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
SIDEBAND = LOWER
SIBEBAND = UPPER
SIDEBAND = LOWER
SIDEBAND = UPPER
–4
–3
–2
–1
0
1
7
8
9
10
11
12
13
14
LO POWER (dBm)
LO FREQUENCY (GHz)
Figure 45. LO to IF Feedthrough vs. LO Power at
Various Temperatures and Sidebands, LO Frequency = 10 GHz
Figure 42. LO to IF Feedthrough vs. LO Frequency at
Various Temperatures and Sidebands
0
0
–10
–20
–30
–40
–50
–60
SIDEBAND = LOWER
SIBEBAND = UPPER
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
–10
–20
–30
–40
–50
–60
–70
SIDEBAND = LOWER
SIBEBAND = UPPER
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 46. LO to RF Feedthrough vs. IF Frequency at
Various Temperatures and Sidebands, IFx Pin = 0 dBm
Figure 43. LO to RF Feedthrough vs. IF Frequency at
Various Temperatures and Sidebands, IFx Pin = 0 dBm
Rev. 0 | Page 14 of 25
Data Sheet
ADMV1011
20
15
10
22GHz
10
0
5
–10
–20
–30
–40
–50
–60
–70
–80
0
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
–5
–10
–15
–20
–25
14GHz
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
6
7
8
9
10
11
12
13
26
24
–4
–3
–2
–1
0
1
2
3
4
2× LO FREQUENCY (GHz)
LO POWER (dBm)
Figure 47. 2× LO to RF Leakage vs. 2× LO Frequency at
Various Temperatures, Without Nulling
Figure 50. 2× LO to RF Leakage vs. LO Power at
Various Temperatures and LO Frequencies, Without Nulling
20
10
0
PORT = LOWER
PORT = UPPER
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
V
V
V
V
V
V
= 0V
CTL
CTL
CTL
CTL
CTL
CTL
= –1.5V
= –2.0V
= –2.5V
= –3.0V
= –5.0V
12
14
16
18
20
22
24
12
14
16
18
20
22
24
26
2× LO FREQUENCY (GHz)
2× LO FREQUENCY (GHz)
Figure 48. 2× LO to RF Leakage vs. 2× LO Frequency at
Various Attenuation Levels (VCTL
Figure 51. 2× LO to IF Leakage vs. 2× LO Frequency for Upper Sideband
and Lower Sideband
)
0
–5
10
T
T
T
= +85°C
= +25°C
= –40°C
FREQUENCY = 18.07GHz
FREQUENCY = 22.97GHz
A
A
A
5
0
–5
–10
–15
–20
–25
–30
–35
–10
–15
–20
–25
–30
–35
–40
–45
–50
17
18
19
20
21
22
23
0
5
10
15
20
25
30
RF FREQUENCY (GHz)
ATTENUATION
Figure 49. RF Output Return Loss vs. RF Frequency at
Various Temperatures, LO Frequency = 10 GHz, 0 dBm
Figure 52. 2× LO to RF Feedthrough vs. Attenuation for Various
Frequencies
Rev. 0 | Page 15 of 25
ADMV1011
Data Sheet
0
0
–5
–5
–10
–15
–20
–10
–15
–20
–25
–30
T
T
T
= +85°C
= +25°C
= –40°C
LO = +4dBm
LO = 0dBm
LO = –4dBm
A
A
A
–25
–30
7
8
9
10
11
12
13
7
8
9
10
11
12
13
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 53. LO Input Return Loss vs. LO Frequency at
Various Temperatures, LO = 0 dBm
Figure 55. LO Input Return Loss vs. LO Frequency at Various LO Powers
5
0
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
SIDEBAND = LOWER
SIBEBAND = UPPER
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
10
1010
2010
3010
4010
IF FREQUENCY (GHz)
Figure 54. IF Input Return Loss vs. IF Frequency at
Various Temperatures and Sidebands
Rev. 0 | Page 16 of 25
Data Sheet
ADMV1011
SPURIOUS PERFORMANCE
Lower Sideband
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, LO = 0 dBm, and taken with
Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2, VCTL3 = −5 V unless otherwise noted.
120
110
100
90
80
70
60
50
40
30
20
10
0
110
100
90
80
70
60
50
40
30
20
10
0
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
17.0
17.5
18.0
18.5
19.0
19.5
20.0
16.25
16.75
17.25
17.75
18.25
18.75
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 56. 3× LO − 4 × IF Spurious Performance vs. RF Frequency at
Various Temperatures, IF Frequency = 3.3 GHz
Figure 58. 1× LO + 2 × IF Spurious Performance vs. RF Frequency at
Various Temperatures
120
100
80
100
90
80
70
60
50
40
60
40
30
1× (LO) + 2 × F
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
3× (LO) – 4 × F
6 × IF
20
10
0
20
0
17.0
17.5
18.0
18.5
19.0
19.5
20.0
–4
–3
–2
–1
0
1
2
3
4
RF FREQUENCY (GHz)
LO POWER (dBm)
Figure 57. 6× IF Spurious Performance vs. RF Frequency at
Various Temperatures, RF Frequency = 18 GHz
Figure 59. Spurious Performance vs. LO Power,
RF Frequency = 18 GHz, IF Frequency = 3.3 GHz
Rev. 0 | Page 17 of 25
ADMV1011
Data Sheet
Upper Sideband
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, LO = 0 dBm, and taken with
Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2, VCTL3 = −5 V unless otherwise noted.
120
100
80
60
40
20
0
120
100
80
60
40
20
0
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.05
21.55
22.05
22.55
23.05
23.55
24.05
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 60. 4× LO – 5 × IF Spurious Performance vs. RF Frequency at
Various Temperatures, IF Frequency = 3.3 GHz
Figure 63. 1× LO + 4 × IF Spurious Performance vs. RF Frequency at
Various Temperatures, IF Frequency = 3.3 GHz
100
90
80
70
60
50
40
30
130
120
110
100
90
80
70
60
50
40
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
30
20
10
0
20
10
0
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (MHz)
Figure 61. 3× LO − 2 × IF Spurious Performance vs. RF Frequency at
Various Temperatures, IF Frequency = 3.3 GHz
Figure 64. 7× IF Spurious Performance vs. RF Frequency at Various
Temperatures, RF Frequency = 23 GHz
120
100
80
120
100
80
60
60
40
40
T
T
T
= +85°C
= +25°C
= –40°C
4× LO – 5 × IF
4× LO – 4 × IF
3× LO – 2 × IF
1× LO + 4 × IF
7× IF
A
A
A
20
0
20
0
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
–4
–3
–2
–1
0
1
2
3
4
RF FREQUENCY (GHz)
LO POWER (dBm)
Figure 62. 4× LO − 4 × IF Spurious Performance vs. RF Frequency at
Various Temperatures, Frequency = 3.3 GHz
Figure 65. Spurious Performance vs. LO Power, RF Frequency = 23 GHz,
IF Frequency = 3.3 GHz
Rev. 0 | Page 18 of 25
Data Sheet
ADMV1011
IF = 2 GHz at 0 dBm, LO = 10.5 GHz at 0 dBm.
M × N SPURIOUS PERFORMANCE
Mixer spurious products are measured in dBc from the RF output
power level. N/A means not applicable.
N × LO
1
2
3
4
5
50.5
58.2
69.5
81.7
91.1
93.9
22.3
0
68.5
81.9
90.1
95.3
102.8
101.4
53.7
65.6
47.6
78.5
83
N/A
N/A
N/A
N/A
N/A
N/A
0
1
2
3
4
5
IF = 2 MHz at 0 dBm, LO = 10 GHz at 0 dBm.
N × LO
41.1
41.2
59.9
70.4
1
2
3
4
5
M × IF
52.2
68.2
73.6
59
30.9
0
56.1
61.1
55.9
50.2
21.4
30.9
63.4
66.2
43.5
71.8
65.5
56.3
77.1
99.1
99
0
1
2
3
4
5
N/A
47.1
43.2
58.7
52.3
M × IF
101.4
99
IF = 3 GHz at 0 dBm, LO = 10 GHz at 0 dBm.
77.1
N/A
N × LO
63.2
1
2
3
4
5
50.9
58
30.2
0
54.7
82.2
90.9
98.2
101.3
N/A
72.1
67.1
48.5
92.3
N/A
N/A
78.4
N/A
N/A
N/A
N/A
N/A
0
1
2
3
4
5
IF = 3 MHz at 0 dBm, LO = 10.5 GHz at 0 dBm.
N × LO
74.9
87.1
79.4
N/A
58.3
66.6
100
N/A
1
2
3
4
5
M × IF
50.5
73
21.8
0
69.6
64.1
59.8
71.2
81.1
76
62.1
58.9
43.9
65.2
64.8
65
N/A
96.6
97.8
97.5
100.4
102.8
0
1
2
3
4
5
95.7
124.6
120.8
95.4
41.7
42.7
74.5
48.1
M × IF
IF = 4 GHz at 0 dBm, LO = 9.5 GHz at 0 dBm.
N × LO
1
2
3
4
5
53.3
58.1
64.8
80.6
96
47.1
0
42.1
79.6
97.9
94.8
98.3
94.8
55.9
79.7
49.8
95.8
N/A
N/A
94
0
1
2
3
4
5
IF = 4 MHz at 0 dBm, LO = 11 GHz at 0 dBm.
N/A
N/A
N/A
N/A
N/A
N × LO
63.7
62.4
103.5
100.6
1
2
3
4
5
M × IF
60.2
91.9
98.9
118.8
114
117.9
9.8
0
68.1
74.9
70
76.1
50.7
44.7
56.6
63.4
66.5
N/A
96.9
98.8
99.7
100.5
101.4
0
1
2
3
4
5
104.3
33.9
50.5
72.8
96.3
M × IF
70.8
81.9
99.5
Rev. 0 | Page 19 of 25
ADMV1011
Data Sheet
THEORY OF OPERATION
The ADMV1011 is a GaAs, MMIC, double sideband upconverter
in a RoHS compliant package optimized for upper sideband
and lower sideband point to point microwave radio applications
operating in the 17 GHz to 24 GHz output frequency range. The
ADMV1011 supports LO input frequencies of 8 GHz to 12 GHz
and IF input frequencies of 2 GHz to 4 GHz.
RF AMPLIFIER
The RF amplifier is a variable gain amplifier where the gain can
be adjusted by changing the control voltages (VCTL2 and
VCTL3). The RF amplifier requires two dc bias voltages
(VDRF1 and VDRF2) and two dc gate bias voltages (VGRF1
and VGRF2) to operate. Starting at −1.8 V at the gate supply
(VGRF1 and VGRF2), the RF amplifier is biased at 5 V (VDRF1
and VDRF2). Then, the gate bias (VGRF1 and VGRF2) is varied
until the desired RF amplifier bias current (IDRF1 and IDRF2)
is achieved. The desired RF amplifier bias current is 220 mA for
IDRF1 and 75 mA for IDRF2 under small signal conditions.
The ADMV1011 uses a variable gain RF amplifier and an I/Q
preceded by a double balanced mixer, where a driver amplifier
drives the LO (see Figure 1). The combination of design, process,
and packaging technology allows the functions of these
subsystems to be integrated into a single die, using mature
packaging and interconnection technologies to provide a high
performance, low cost design with excellent electrical,
The ADMV1011 has an internal band-pass filter between the
mixer and the RF driver amplifier that reduces LO leakage and
filters out the lower sideband at the RF output. The balanced
input drive allows exceptional linearity performance compared
to similar single-ended solutions.
mechanical, and thermal properties. In addition, the need for
external components is minimized, optimizing cost and size.
LO DRIVER AMPLIFIER
The LO driver amplifier takes a single LO input and doubles the
frequency, amplifying it to the desired LO signal level for the
mixer to operate optimally. The LO driver amplifier requires a
single dc bias voltage (VDLO), which draws about 160 mA at
3.5 V under the LO drive. The LO drive range of −4 dBm to
+4 dBm makes it compatible with Analog Devices, Inc.,
wideband synthesizer portfolio without the requirement for
an external LO driver amplifier.
The typical application circuit (see Figure 66) shows the
necessary external components on the bias lines to eliminate
any undesired stability problems for the RF amplifier and the
LO amplifier.
The ADMV1011 upconverter comes in a compact, thermally
enhanced, 4.9 mm × 4.9 mm, 32-terminal ceramic leadless chip
carrier (LCC) package. The ADMV1011 operates over the
−40°C to +85°C temperature range.
MIXER
The mixer is an I/Q double balanced mixer and reduces the
need for filtering unwanted sideband. An external 90° hybrid is
required to select the desired sideband of operation.
The ADMV1011 has been optimized to work with the
Mini Circuits QCN-45+ RF 90° hybrid.
Rev. 0 | Page 20 of 25
Data Sheet
ADMV1011
APPLICATIONS INFORMATION
The evaluation board and the typical application circuit are
optimized for low-side LO (upper sideband) performance with
the Mini-Circuit QCN-45+ RF 90° hybrid.
TYPICAL APPLICATION CIRCUIT
The typical application circuit is shown in Figure 66. The
application circuit shown has been replicated for the evaluation
board circuit.
The ADMV1011 can support IF frequencies from 4 GHz to dc
because its I/Q mixers are double balanced.
VCTRL1
VCTRL1
5019
1
C20
VDRF1
VDRF1
5019
1
0.33µF
C21
VDLO
VDLO
5019
RF_OUT
1
C13
RF_OUT
1
0.01µF
2
3 4
1µF
C11
25-146-1000-92
C23
AGND
AGND
1µF
C22
0.01µF
C12
VGRF1
VGRF1
5019
C7
C1
C17
100pF
100pF
AGND
1µF
0.01µF
100pF
AGND
AGND
AGND
VCTRL2
DUT
24
VCTRL2
VCTRL3
VGRF2
5019
C8
C10
1
100pF
0.33µF
GND
NIC
2
3
4
5
6
7
8
23
22
21
20
19
18
17
RFOUT
GND
NIC
VGMIXER
5019
VGMIXER
NIC
NIC
AGND
NIC
C24
100pF
C4
C25
ADMV1011A
VGRF1
VCTL2
VCTL3
VGRF2
NIC
VCTRL3
5019
0.01µF 1µF
GND
LOIN
NIC
C9
C15
100pF
LO_IN
1
0.33µF
LO_IN
AGND
2
3 4
EZ
25-146-1000-92
AGND
AGND
VGRF2
5019
AGND
AGND
C6
C3
C16
1µF 0.01µF
100pF
AGND
VDRF2
VDRF2
5019
C18
C2
C19
1µF 0.01µF
100pF
AGND
L1
L2
VDI
VDQ
VDQ
VDI
5019
15nH
15nH
5019
C14
1µF
C26
C27
C5
220pF
220pF
1µF
T1
AGND
AGND
1
4
6
SUM_PORT
PORT_1
PORT_2
IF_INPUT_LSB
R4
0Ω
3
1
IF_INPUT_LSB
50Ω_TERM
IF_INPUT_USB
1
GND GND
R1
2
3 4
IF_INPUT_USB
2
5
QCN-45+
25-146-1000-92
0Ω
R2
2
3 4
25-146-1000-92
50Ω
AGND
R3
AGND
50Ω
AGND
AGND
AGND
Figure 66. Typical Application Circuit
Rev. 0 | Page 21 of 25
ADMV1011
Data Sheet
6. Adjust the VGRF2 supply between −1.8 V to −0.8 V until
IDRF2 = 75 mA.
7. Connect LOIN to the LO signal generator with a LO power
between −4 dBm to +4 dBm.
8. For the upper sideband, add a 0 Ω resistor (R1) and
remove the R4 resistor from the board. For the lower
sideband, add a 0 Ω resistor (R4) and remove the R1
resistor from the board.
EVALUATION BOARD INFORMATION
The circuit board used in the application must use RF circuit
design techniques. Signal lines must have 50 Ω impedance, and
the package ground leads and exposed pad must be connected
directly to the ground plane (see Figure 67 and Figure 68). Use a
sufficient number of via holes to connect the top and bottom
ground planes. The evaluation circuit board shown in Figure 69
is available from Analog Devices, upon request.
9. Apply the IF signal to the appropriate port.
Layout
Power-Off Sequence
Solder the exposed pad on the underside of the ADMV1011 to
a low thermal and electrical impedance ground plane. This pad
is typically soldered to an exposed opening in the solder mask
on the evaluation board. Connect these ground vias to all other
ground layers on the evaluation board to maximize heat
dissipation from the device package. Figure 67 shows the PCB
land pattern footprint for the EVAL-ADMV1011, and Figure 68
shows the solder paste stencil for the EVAL-ADMV1011.
Take the following steps to turn off the EVAL-ADMV1011:
1. Turn off the LO and IF signals.
2. Set VGRF1 and VGRF2 to −1.8 V.
3. Set VCTL1 and VCTL2 to 0 V.
4. Set the VDRF1 and VDRF2 supplies to 0 V and then turn
off the VDRF1 and VDRF2 supplies.
5. Set the VDLO supply to 0 V and then turn off the VDLO
supply.
Power-On Sequence
6. Turn off the VGRF1, VGRF2, VCTL1, and VCTL2
supplies.
Take the following steps to turn on the EVAL-ADMV1011:
1. Power up VGRF1 andVGRF2 with a −1.8 V supply.
2. Power up VCTL2 and VCTL3 with −5 V supply for
maximum conversion gain.
3. Power up e VDRF1 and VDRF2 with a 5 V supply.
4. Power up e VDLO with a 3.5 V supply.
5. Adjust the VGRF1 supply between −1.8 V to −0.8 V until
IDRF1 = 220 mA.
2× LO Suppression
The EVAL-ADMV1011 can suppress the 2× LO signal through
the VDI and VDQ test points. The common mode of the two IF
signals is 0 V. Injecting a nonzero voltage at VDI and VDQ can
change the 2× LO level. The 2× LO signal is from the LOIN pin
of the ADMV1011.
Rev. 0 | Page 22 of 25
Data Sheet
ADMV1011
0.217" SQUARE
0.004" MASK/METAL OVERLAP
0.010" MINIMUM MASK WIDTH
SOLDER MASK
GROUND PAD
PAD SIZE
0.026" × 0.010"
PIN 1
0.197"
[0.50]
0.156"
MASK
OPENING
ø.034"
TYPICAL
VIA SPACING
ø.010"
TYPICAL VIA
0.010" REF
0.138" SQUARE MASK OPENING
0.02 × 45° CHAMFER FOR PIN 1
0.030"
MASK OPENING
0.146" SQUARE
GROUND PAD
Figure 67. PCB Land Pattern Footprint of the EVAL-ADMV1011
0.017
0.0197
TYP
0.219
SQUARE
0.132
SQUARE
0.017
0.027
TYP
R0.0040 TYP
132 PLCS
0.010
TYP
Figure 68. Solder Paste Stencil of the EVAL-ADMV1011
Rev. 0 | Page 23 of 25
ADMV1011
Data Sheet
Figure 69. EVAL-ADMV1011 Evaluation Board Top Layer
BILL OF MATERIALS
Table 6.
Qty. Reference Designator
Description
Manufacturing/Part No.
1
6
8
Evaluation board
C1 to C4, C11, C21
C10, C12, C15 to C17, C19, C22, C24
PCB
Analog Devices/08_042363a
Murata/GRM155R71E103KA01D
TDK/C1005NP01H101J050BA
0.01 µF ceramic capacitors, X7R, 0402
100 pF multilayer ceramic capacitors, NP0,
high temperature, C0402
8
C5 to C7, C13, C14, C18, C23, C25
1 µF monolithic ceramic capacitors, X5R,
C0603
Murata/GRM188R61E105KA12D
3
2
16
C8, C9, C20
C26, C27
GND, VDI, VDQ, GND1 to GND4,
VDLO, VDRF1, VDRF2, VGRF1, VGRF2,
VCTL1 to VCTL3, VGMIXER
0.33 µF ceramic capacitors, X5R, C0603
220 pF ceramic capacitors, C0G, 0402, C0402
Connector PCB test points, compact mini,
5019, CNKEY5019
AVX/0603YD334KAT2A
Murata/GRM1555C1H221JA01D
Keystone Electronic Corp/5019
4
LO_IN, RF_OUT,
IF_INPUT_LSB, IF_INPUT_USB
Connector PCB SMA, K_SRI-NS,
CNSMAL460W295H156
SRI Connector Gage/25-146-1000-92
2
2
L1, L2
R1, R4
15 nH inductor chips, 0402, L0402-2
0 Ω resistors, chip surface-mounted diode
jumper, 0402
Coilcraft/0402HP-15NXJLU
Panasonic/ERJ-2GE0R00X
1
1
R2
R3
50 Ω resistor, high frequency chip, R0402
50 Ω resistor, high frequency chip, 0402,
R0402
Vishay Precision Group/FC0402E50R0BST1
Vishay Precision Group/FC0402E50R0FST1
1
T1
Transformer power splitter/combiner,
2500 to 4500 MHz, TSML126W63H42
Mini-Circuits/QCN-45+
Rev. 0 | Page 24 of 25
Data Sheet
ADMV1011
OUTLINE DIMENSIONS
5.05
4.90 SQ
4.75
0.36
0.30
0.24
PIN 1
0.08
REF
INDICATOR
PIN 1
32
25
24
1
0.50
BSC
3.60
3.50 SQ
3.40
EXPOSED
PAD
17
8
16
9
0.38
0.32
0.26
0.20 MIN
BOTTOM VIEW
3.50 REF
TOP VIEW
SIDE VIEW
1.10
1.00
0.90
4.10 REF
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SEATING
PLANE
SECTION OF THIS DATA SHEET.
Figure 70. 32-Terminal Ceramic Leadless Chip Carrier [LCC]
(E-32-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
ADMV1011AEZ
ADM1011-EVALZ
Temperature Range
Package Description
Package Option
E-32-1
−40°C to +85°C
32-Terminal Ceramic Leadless Chip Carrier [LCC]
Evaluation Board
1 Z = RoHS Compliant Part.
©2017 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D15776-0-10/17(0)
Rev. 0 | Page 25 of 25
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