HMC1131LC4TR [ADI]
Point-to-point radios;
| 型号： | HMC1131LC4TR |
| 厂家： | 
ADI |
| 描述： | Point-to-point radios 射频 微波 |
| 文件： | 总15页 (文件大小：453K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs, pHEMT, MMIC, Medium Power
Amplifier, 24 GHz to 35 GHz
Data Sheet
HMC1131
FEATURES
FUNCTIONAL BLOCK DIAGRAM
High saturated output power (PSAT): 25 dBm
High output third-order intercept (IP3): 35 dBm
High gain: 22 dB (24 GHz to 27 GHz)
High output power for 1 dB compression (P1dB): 24 dBm
DC supply: 5 V at 225 mA
1
2
3
4
5
6
18
17
16
15
14
13
NIC
GND
RFIN
GND
NIC
NIC
GND
RFOUT
GND
NIC
Compact 24-lead, 4 mm × 4 mm LCC package
1.5kΩ
1.5kΩ
APPLICATIONS
HMC1131
Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM
NIC
NIC
PACKAGE
BASE
Figure 1.
GENERAL DESCRIPTION
The HMC1131 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), driver amplifier that operates from
24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the
24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of
output power at 1 dB gain compression, while requiring 225 mA
from a 5 V supply. The HMC1131 is capable of supplying 25 dBm
of saturated output power and is housed in a compact, 4 mm ×
4 mm ceramic leadless chip carrier (24-lead LCC). The HMC1131
is an ideal driver amplifier for a wide range of applications,
including point-to-point radios, from 24 GHz to 35 GHz.
Rev. A
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Tel: 781.329.4700
Technical Support
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www.analog.com
HMC1131* Product Page Quick Links
Last Content Update: 11/01/2016
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• HMC1131: GaAs, pHEMT, MMIC, Medium Power
Amplifier, 24 GHz to 35 GHz Data Sheet
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HMC1131
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................4
Pin Configuration and Function Descriptions..............................5
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Applications Information.............................................................. 11
Evaluation PCB........................................................................... 12
Typical Application Circuit........................................................... 13
Outline Dimensions....................................................................... 14
Ordering Guide .......................................................................... 14
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Electrical Specifications................................................................... 3
24 GHz to 27 GHz Frequency Range......................................... 3
27 GHz to 35 GHz Frequency Range......................................... 3
Absolute Maximum Ratings............................................................ 4
REVISION HISTORY
9/15—Rev. 0 to Rev. A
Changes to Features Section and General Description Section........1
Change to Gain Parameter, Table 1................................................ 3
7/15—Revision 0: Initial Version
Rev. A | Page 2 of 14
Data Sheet
HMC1131
ELECTRICAL SPECIFICATIONS
24 GHz TO 27 GHz FREQUENCY RANGE
TA = 25°C, VDD1 = VDD2 = VDD3 = VDD4 = 5 V, IDD = 225 mA, unless otherwise stated. Adjust VGG1 and VGG2 between −2 V to 0 V to
achieve IDD = 225 mA typical.
Table 1.
Parameter
Symbol
Min
24
Typ
Max
Unit
GHz
dB
FREQUENCY RANGE
GAIN
27
18
22
Gain Variation Over Temperature
RETURN LOSS
0.031
dB/°C
Input
Output
8
7
dB
dB
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept1
SUPPLY CURRENT
Total Supply Current
P1dB
PSAT
IP3
20
23
27
34
dBm
dBm
dBm
IDD
225
4
mA
V
2
Total Supply Current vs. VDD
5
V
1 Measurement taken at POUT/tone = 10 dBm.
2 The amplifier operates over the full voltage ranges shown. VGG1 and VGG2 are adjusted to achieve IDD = 225 mA at 5 V.
27 GHz TO 35 GHz FREQUENCY RANGE
TA = 25°C, VDD1 = VDD2 = VDD3 = VDD4 = 5 V, IDD = 225 mA, unless otherwise stated. Adjust VGG1 and VGG2 between −2 V to 0 V to
achieve IDD = 225 mA typical.
Table 2.
Parameter
Symbol
Min
27
Typ
Max
Unit
GHz
dB
FREQUENCY RANGE
GAIN
35
18
20
Gain Variation Over Temperature
RETURN LOSS
0.031
dB/°C
Input
Output
8
7
dB
dB
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept1
SUPPLY CURRENT
Total Supply Current
P1dB
PSAT
IP3
21
24
25
35
dBm
dBm
dBm
IDD
225
4
mA
V
2
Total Supply Current vs. VDD
5
V
1 Measurement taken at POUT/tone = 10 dBm.
2 The amplifier operates over the full voltage ranges shown. VGG1 and VGG2 are adjusted to achieve IDD = 225 mA at 5 V.
Rev. A | Page 3 of 14
HMC1131
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 3.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Parameter
Rating
Drain Bias Voltage (VDD)
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation (PDISS),
TA = 85°C (Derate 22 mW/°C)
5.5 V
12 dBm
175°C
1.97 W
Thermal Resistance, RTH (Junction to
Ground Paddle)
Operating Temperature
45.5°C/W
ESD CAUTION
−40°C to +85°C
−65°C to +150°C
Storage Temperature
ESD Sensitivity, Human Body Model (HBM)
Class 0,
passed 150 V
Maximum Peak Reflow Temperature
260°C
Rev. A | Page 4 of 14
Data Sheet
HMC1131
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
6
18
17
16
15
14
13
NIC
GND
RFIN
GND
NIC
NIC
GND
RFOUT
GND
NIC
HMC1131
TOP VIEW
(Not to Scale)
NIC
NIC
NOTES
1. NIC = NOT INTERNALLY CONNECTED.
2. THE EXPOSED PAD MUST BE CONNECTED
TO RF/DC GROUND.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic
Description
1, 5 to 7, 9, 10, 12 to 14, NIC
18, 19, 24
Not Internally Connected. However, all data was measured with these pins connected to RF/dc
ground externally.
2, 4, 15, 17
3
8
GND
RFIN
VGG1
Ground. These pins must be connected to RF/dc ground.
RF Input. This pin is ac-coupled and matched to 50 Ω.
Gate Bias Pin for the First and Second Stages. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF
are required for this pin.
11
VGG2
Gate Bias Pin for the Third and Fourth Stages. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF
are required for this pin.
16
RFOUT
RF Output. This pin is ac-coupled and matched to 50 Ω.
20 to 23
VDD4 to VDD1
Drain Bias Voltage Pins. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required for
these pins.
EPAD
Exposed Pad. The exposed pad must be connected to RF/dc ground.
Rev. A | Page 5 of 14
HMC1131
Data Sheet
INTERFACE SCHEMATICS
RFIN
RFOUT
1.5kΩ
1.5kΩ
Figure 3. RFIN Interface Schematic
Figure 6. RFOUT Interface Schematic
GND
V
V
1, V 2,
DD
DD DD
3, V 4
DD
Figure 4. GND Interface Schematic
Figure 7. VDD1 to VDD4 Interface Schematic
V
1, V 2
GG GG
Figure 5. VGG1/VGG2 Interface Schematic
Rev. A | Page 6 of 14
Data Sheet
HMC1131
TYPICAL PERFORMANCE CHARACTERISTICS
30
30
28
26
24
22
20
18
16
14
12
20
10
0
–10
–20
S11
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
S21
S22
–30
23
25
27
29
31
33
35
37
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. Response (Broadband Gain and Return Loss) vs. Frequency
Figure 11. Gain vs. Frequency at Various Temperatures
0
–5
0
–5
–10
–15
–20
–25
–10
–15
–20
–25
–30
–35
–30
–35
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
24 25 26 27 28 29 30 31 32 33 34 35 36
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. Input Return Loss vs. Frequency at Various Temperatures
Figure 12. Output Return Loss vs. Frequency at Various Temperatures
30
28
26
24
22
20
18
16
30
28
26
24
22
20
18
16
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
14
14
4V
5V
12
12
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
Figure 10. P1dB vs. Frequency at Various Temperatures
Figure 13. P1dB vs. Frequency at Various Supply Voltages
Rev. A | Page 7 of 14
HMC1131
Data Sheet
30
28
26
24
22
20
18
16
14
12
30
28
26
24
22
20
18
16
14
12
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
4V
5V
24 25 26 27 28 29 30 31 32 33 34 35 36
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 14. PSAT vs. Frequency at Various Temperatures
Figure 17. PSAT vs. Frequency at Various Supply Voltages
30
28
26
24
22
20
18
16
14
12
30
28
26
24
22
20
18
16
14
12
175mA
200mA
225mA
250mA
175mA
200mA
225mA
250mA
24 25 26 27 28 29 30 31 32 33 34 35 36
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. P1dB vs. Frequency at Various Supply Currents
Figure 18. PSAT vs. Frequency at Various Supply Currents
40
40
38
36
34
32
30
28
26
24
22
20
38
36
34
32
30
28
26
24
22
20
175mA
200mA
225mA
250mA
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
24 25 26 27 28 29 30 31 32 33 34 35 36
24 25 26 27 28 29 30 31 32 33 34 35 36
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 16. Output IP3 vs. Frequency at Various Temperatures,
OUT/Tone = 10 dBm
Figure 19. Output IP3 vs. Frequency at Various Supply Currents,
OUT/Tone = 10 dBm
P
P
Rev. A | Page 8 of 14
Data Sheet
HMC1131
40
38
36
34
32
30
28
26
24
22
20
70
60
50
40
30
20
28GHz
30GHz
32GHz
34GHz
4V
5V
24 25 26 27 28 29 30 31 32 33 34 35 36
10
12
14
16
4
6
8
FREQUENCY (GHz)
P
/TONE (dBm)
OUT
Figure 20. Output IP3 vs. Frequency for Various Supply Voltages,
Figure 23. Output Third-Order Intermodulation (IM3) vs.
OUT/Tone at VDD = 4 V
P
OUT/Tone = 10 dBm
P
70
60
50
40
30
20
30
25
20
15
10
5
400
370
340
310
280
250
220
P
PAE
OUT
28GHz
30GHz
32GHz
34GHz
GAIN
I
DD
0
10
12
14
16
4
6
8
7
9
–15 –13 –11 –9 –7 –5 –3 –1
1
3
5
P
/TONE (dBm)
OUT
INPUT POWER (dBm)
Figure 21. Output Third-Order Intermodulation (IM3) vs.
OUT/Tone at VDD = 5 V
Figure 24. Power Compression at 30.5 GHz
(PAE Is Power Added Efficiency)
P
27
26
25
24
23
22
21
20
19
27
26
25
24
23
22
21
20
19
P
GAIN
P1dB
P
SAT
GAIN
P1dB
SAT
175
200
225
250
4.0
4.2
4.4
4.6
4.8
5.0
I
(mA)
V
(V)
DD
DD
Figure 22. Gain, P1dB, and PSAT vs. Supply Current (IDD) at 30.5 GHz
Figure 25. Gain, P1dB, and PSAT vs. Supply Voltage (VDD) at 30.5 GHz
Rev. A | Page 9 of 14
HMC1131
Data Sheet
0
–10
–20
–30
–40
–50
–60
40
35
30
25
20
15
10
5
10dBm
12dBm
14dBm
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
0
24 25 26 27 28 29 30 31 32 33 34 35 36
170 175 180 185 190 195 200 205 210 215 220 225
FREQUENCY (GHz)
I
(mA)
DD
Figure 26. Reverse Isolation vs. Frequency at Various Temperatures
Figure 29. Output IP3 vs. IDD over POUT/Tone at 30 GHz,
VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA
25
25
20
15
10
5
20
15
10
5
10dBm
12dBm
14dBm
0
0
170 175 180 185 190 195 200 205 210 215 220 225
170 175 180 185 190 195 200 205 210 215 220 225
I
(mA)
DD
I
(mA)
DD
Figure 27. Input IP3 vs. IDD over POUT/Tone at 30 GHz,
DD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA
Figure 30. Gain vs. IDD over POUT/Tone = 14 dBm at 30 GHz,
DD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to50 mA
V
V
2.0
27GHz
28GHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30GHz
32GHz
33GHz
34GHz
–12
–9
–6
–3
–0
3
6
9
INPUT POWER (dBm)
Figure 28. Power Dissipation (PDISS) at 85°C vs. Input Power for
Various Frequencies
Rev. A | Page 10 of 14
Data Sheet
HMC1131
APPLICATIONS INFORMATION
The HMC1131 is a GaAs, pHEMT, MMIC, medium power
amplifier consisting of four gain stages in series. VGG1 is the gate
bias pin for the first and second stages, while VGG2 is the gate
bias pin for the third and fourth stages. A simplified block
diagram is shown in Figure 31.
The following is the recommended bias sequence during
power-down:
1. Turn the RF signal off.
2. Decrease VGG1 and VGG2 to −2 V to achieve a quiescent
I
DD = 0 mA (approximately).
All measurements for this device were taken using the evaluation
printed circuit board (PCB) in its default configuration. Unless
otherwise noted, the VGG1, VGG2, and VDD1 to VDD4 pins were
tied together during measurement, respectively.
3. Decrease VDD1 through VDD4 to 0 V.
4. Increase VGG1 and VGG2 to 0 V.
The VDDx = 5 V and IDD = 225 mA bias conditions are the operating
points recommended to optimize the overall performance.
Unless otherwise noted, the data shown was taken using the
recommended bias conditions. Operation of the HMC1131 at
different bias conditions may result in performance that differs
from that shown in Figure 27 and Figure 30. Biasing the
HMC1131 for higher drain current typically results in higher
P1dB, OIP3, and gain but at the expense of increased power
consumption.
The following is the recommended bias sequence during
power-up:
1. Connect to ground.
2. Set VGG1 and VGG2 to −2 V.
3. Set VDD1 through VDD4 to 5 V.
4. Increase VGG1 and VGG2 to achieve a quiescent
I
DD = 225 mA.
5. Apply the RF signal.
V
1
V
2
V
3
V
4
DD
DD
DD
DD
I
1
I
1
I
2
I
2
DD
A
DD
B
DD
A
DD B
RFIN
RFOUT
I
I
1 = I
2 = I
1
2
+ I
+ I
1
2
DD
DD
A
DD
B
B
DD
DD
A
DD
V
1
V
2
GG
GG
Figure 31. Simplified Block Diagram
Rev. A | Page 11 of 14
HMC1131
Data Sheet
exposed paddle must be connected directly to the ground plane
similar to what is shown in Figure 32. Use a sufficient number
of via holes to connect the top and bottom ground planes.
EVALUATION PCB
Generate the evaluation PCB used in this application with
proper RF circuit design techniques. Signal lines at the RF port
must have 50 Ω impedance, and the package ground leads and
THRU CAL
VD1 VD2 VD3 VD4
TP1
+
TP2
TP3
+
+
+
C17
C15
C16
C18
U1
C13
C12
C14
RFIN
+
RFOUT
+
+
C20
C21
C19
TP5
TP6 TP7
VG2
VCTRL
VG1
Figure 32. 600-00145-00-1 Evaluation PCB
Bill of Materials
Table 5. Evaluation Board (EV1HMC1131LC4) Bill of Materials
Item
Description
Manufacturer1
J1, J2
PCB mount, K connector
DC pin
100 pF capacitors, 0402 package
10000 pF capacitors, 0402 package
TP1 to TP7
C1 to C6
C8 to C13
C15 to C20 2.2 µF capacitors, 0402 package
U1
HMC1131LC4
Analog Devices, Inc.
PCB
600-00145-00-1 evaluation board, Rogers 4350 or Arlon 25FR circuit board material
600-00145-00-1, Analog Devices, Inc.
1 Blank cells in the manufacturer column left blank intentionally for they are user selectable.
Rev. A | Page 12 of 14
Data Sheet
HMC1131
TYPICAL APPLICATION CIRCUIT
V
2
V
V
3
4
DD
DD
DD
+
+
+
C15
C8
C1
C2
C9
C16
4.7µF
0.01µF
100pF
100pF
0.01µF
4.7µF
V
1
DD
+
C17
4.7µF
C10
0.01µF
C3
100pF
C4
100pF
C11
0.01µF
C18
4.7µF
1
2
3
4
5
6
18
NIC
NIC
17
16
15
14
13
GND
RFIN
GND
RFOUT
RFIN
RFOUT
1.5kΩ
1.5kΩ
GND
NIC
NIC
GND
NIC
NIC
HMC1131
V
1
V
2
GG
GG
C20
4.7µF
C13
0.01µF
C6
100pF
C5
100pF
C12
0.01µF
C19
4.7µF
+
+
Figure 33. Typical Application Circuit
Rev. A | Page 13 of 14
HMC1131
Data Sheet
OUTLINE DIMENSIONS
4.13
4.00 SQ
3.87
0.36
0.30
0.24
PIN 1
(0.32 × 0.32)
PIN 1
INDICATOR
19
24
18
1
0.50
BSC
EXPOSED
PAD
2.50 SQ
13
6
7
12
BOTTOM VIEW
2.50 REF
TOP VIEW
SIDE VIEW
3.10 BSC
1.02 MAX
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SEATING
PLANE
SECTION OF THIS DATA SHEET.
Figure 34. 24-Terminal Ceramic Leadless Chip Carrier [LCC]
(HE-24-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
MSL Rating2 Lead Finish
Package Description
Gold over Nickel 24-Terminal LCC
Package Option Branding3
HMC1131LC4
−40°C to +85°C
MSL3
HE-24-1
H1131
XXXX
H1131
XXXX
HMC1131LC4TR
−40°C to +85°C
MSL3
Gold over Nickel 24-Terminal LCC
Evaluation Board
HE-24-1
EV1HMC1131LC4
1 The HMC1131LC4 and the HMC1131LC4TR are RoHS Compliant.
2 See the Absolute Maximum Ratings section.
3 XXXX is the 4-digit lot number.
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13105-0-9/15(A)
Rev. A | Page 14 of 14
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