APT60M75JVFR [ADPOW]
POWER MOS V FREDFET; 功率MOS V FREDFET
| 型号： | APT60M75JVFR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS V FREDFET |
| 文件： | 总4页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT60M75JVFR
600V 62A 0.075Ω
S
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
S
D
G
SOT-227
"UL Recognized"
ISOTOP®
• Faster Switching
• Avalanche Energy Rated
D
• Lower Leakage
•
FAST RECOVERY BODY DIODE
G
• Popular SOT-227 Package
MAXIMUM RATINGS
S
All Ratings: T = 25°C unless otherwise specified.
C
APT60M75JVFR
UNIT
Symbol Parameter
VDSS
ID
Drain-Source Voltage
600
62
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
248
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
700
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
PD
5.6
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
62
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
600
62
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, ID = 31A)
Ohms
µA
0.075
250
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
1000
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT60M75JVFR
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
16500 19800
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
1900
750
700
80
2660
1125
1050
120
495
40
pF
Reverse Transfer Capacitance
3
VGS = 10V
VDD = 300V
Total Gate Charge
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = 62A @ 25°C
330
20
VGS = 15V
VDD = 300V
ID = 62A @ 25°C
RG = 0.6Ω
20
40
td(off)
tf
Turn-off Delay Time
Fall Time
80
120
24
12
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
62
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
248
1.3
15
2
(VGS = 0V, IS = - 62A)
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -62A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
600
ns
µC
trr
Reverse Recovery Charge
(IS = -62A, di/dt = 100A/µs)
1.8
7.4
16
Qrr
Peak Recovery Current
(IS = -62A, di/dt = 100A/µs)
IRRM
Amps
30
THERMAL/PACKAGECHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
2500
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Volts
lb•in
10
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
4
5
Starting Tj = +25°C, L = 1.87mH, RG = 25Ω, Peak IL = 62A
di
IS ≤ ID = 62A,
/
= 100A/µs, Tj ≤ 150°C, RG = 2.0Ω VR = 600V.
dt
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.2
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
Note:
0.02
0.01
0.005
t
1
t
SINGLEPULSE
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.001
J
DM θJC
C
0.0005
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
APT60M75JVFR
200
160
120
80
200
160
120
80
V
=7V, 10V & 15V
GS
V
=7V, 10V & 15V
GS
6V
6V
5.5V
5V
5.5V
5V
40
40
4.5V
4V
4.5V
4V
0
0
0
V
50
100
150
200
250
300
0
V
4
8
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
16
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.20
200
160
120
80
T
= -55°C
J
NORMALIZED TO
V
= 10V
@
0.5
I
[Cont.]
V
> I (ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
<0.5 % DUTY CYCLE
GS
D
DS
D
1.15
1.10
1.05
1.00
0.95
@
V
=10V
GS
V
=20V
GS
T
= +125°C
J
40
T
= +25°C
T = -55°C
J
J
0
0
2
4
6
8
0
25
50
75
100
125
150
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
70
1.15
60
50
40
30
20
10
0
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
= 0.5
I
[Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT60M75JVFR
300
60,000
10µS
OPERATIONHERE
LIMITEDBYR (ON)
DS
100
50
100µS
C
C
iss
1mS
10,000
5,000
10
5
10mS
oss
100mS
DC
C
1
rss
T
=+25°C
C
.5 T =+150°C
J
1,000
500
SINGLEPULSE
.1
1
V
5
10
50 100
600
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
20
16
12
8
I
= I [Cont.]
D
D
100
V
=120V
DS
T =+150°C
J
T =+25°C
J
V
=300V
50
DS
V =480V
DS
10
5
4
1
0
0
250
g
500
750
1000
1250
0.2
V
0.4
0.6
0.8
1.0
1.2
1.4
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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