APTGF25X120E2 [ADPOW]
3 Phase bridge NPT IGBT Power Module; 3相桥NPT IGBT功率模块
| 型号： | APTGF25X120E2 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | 3 Phase bridge NPT IGBT Power Module |
| 文件： | 总4页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF10X120E2
VCES = 1200V
IC = 10A @ Tc = 80°C
3 Phase bridge
Application
•
Features
•
AC Motor control
Non Punch Through (NPT) IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Pin out: APTGF10X120E2 (Long pins)
N-
U
V
W
P+
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
1 2 3 4 5 6 7 8 9 10 11 12
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Pin out: APTGF10X120P2 (Short pins)
N-
U
V
W
P+
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
1
2
3
4
5
6
7
8
9
10
11 12
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
TC = 80°C
TC = 25°C
15
10
30
±20
80
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
SCSOA Short Circuit Safe Operating Area
100A@1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 4
APT website – http://www.advancedpower.com
APTGF10X120E2
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
1200
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500µA
V
Tj = 25°C
200
800
400
VGE = 0V
VCE = 1200V
ICES
Zero Gate Voltage Collector Current
µA
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.7
3.3
5.5
3.2
V
GE = 15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 10A
3.9
6.5
120
VGE = VCE , IC = 0.35 mA
VGE = 20V, VCE = 0V
4.5
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
600
pF
60
38
55
Inductive Switching (125°C)
Td(on)
110
100
570
120
V
GE = ±15V
Tr
Rise Time
50
380
80
ns
VBus = 600V
IC = 10A
RG = 150Ω
Td(off) Turn-off Delay Time
Tf Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 10A
Tj = 25°C
Tj = 125°C
2.9
2.6
3.4
VF
trr
Diode Forward Voltage
Reverse Recovery Time
V
V
GE = 0V
IF = 10A
VR = 600V
di/dt =400A/µs
IF = 10A
VR = 600V
di/dt =400A/µs
Tj = 125°C
0.5
µs
Tj = 25°C
0.4
1.2
Qrr
Reverse Recovery Charge
µC
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
1.55
2
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Torque
Wt
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
2
150
125
125
3.5
°C
Mounting torque
To Heatsink
M5
N.m
g
Package Weight
185
2 - 4
APT website – http://www.advancedpower.com
APTGF10X120E2
Package outline
Pin out: APTGF10X120E2 (Long pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
3 - 4
APT website – http://www.advancedpower.com
APTGF10X120E2
Package outline
Pin out: APTGF10X120P2 (Short pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCEDAS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
4 - 4
APT website – http://www.advancedpower.com
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