APTGF50SK120T [ADPOW]
Buck chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF50SK120T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Buck chopper NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF50SK120T
VCES = 1200V
Buck chopper
IC = 50A @ Tc = 80°C
NPT IGBT Power Module
Application
Sꢀ AC and DC motor control
Sꢀ Switched Mode Power Supplies
VBUS
NTC2
Q1
Features
G1
E1
Sꢀ Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
OUT
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUSSENSE
Sꢀ Kelvin emitter for easy drive
Sꢀ Very low stray inductance
-
-
Symmetrical design
0/VBUS
NTC1
Lead frames for power connections
Sꢀ Internal thermistor for temperature monitoring
Sꢀ High level of integration
Benefits
Sꢀ Outstanding performance at high frequency
operation
Sꢀ Stable temperature behavior
Sꢀ Very rugged
0/VBUS
OUT
SENSE
Sꢀ Direct mounting to heatsink (isolated package)
Sꢀ Low junction to case thermal resistance
Sꢀ Solderable terminals both for power and signal for
easy PCB mounting
Sꢀ Easy paralleling due to positive TC of VCEsat
Sꢀ Low profile
OUT
VBUS
0/VBUS
E1
G1
NTC2
NTC1
0/VBUS
SENSE
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
Continuous Collector Current
1200
75
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
IC
A
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
150
±20
312
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 6
APT website – http://www.advancedpower.com
APTGF50SK120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500 µA
1200
V
VGE = 0V
Tj = 25°C
500
2500
3.7
ICES
Zero Gate Voltage Collector Current
µA
V
CE = 1200V
Tj = 125°C
Tj = 25°C
Tj = 125°C
3.2
4.0
VGE =15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 50A
VGE = VCE, IC = 1 mA
VGE = 20 V, VCE = 0V
4.5
6.5
100
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Input Capacitance
3450
VCE = 25V
f = 1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
330
220
330
35
V
GS = 15V
VBus = 600V
IC = 50A
nC
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
200
35
Inductive Switching (25°C)
VGE = 15V
65
320
30
5.4
2.3
35
ns
mJ
ns
VBus = 600V
Td(off) Turn-off Delay Time
IC = 50A
Tf
Eon
Eoff
Td(on)
Tr
Fall Time
RG = 5 ꢁ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
Turn-on Delay Time
Rise Time
Inductive Switching (125°C)
V
GE = 15V
65
360
VBus = 600V
IC = 50A
Td(off) Turn-off Delay Time
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
40
RG = 5 ꢁ
6.9
3.05
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 60A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 70°C
60
2.0
2.3
1.8
A
2.5
VF
Diode Forward Voltage
IF = 120A
V
IF = 60A
IF = 60A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 800V
di/dt =200A/µs
IF = 60A
470
1200
4000
Qrr
nC
VR = 800V
di/dt =200A/µs
ꢀ Eon includes diode reverse recovery
ꢀ In accordance with JEDEC standard JESD24-1
2 - 6
APT website – http://www.advancedpower.com
APTGF50SK120T
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.4
0.9
RthJC
Junction to Case
°C/W
Diode
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
-40
-40
-40
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢁ
B25/85 T25 = 298.16 K
4080
K
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
ꢃ
!
1
2
3
ꢁ
.
/
/
1
1
T
25 /85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 - 6
APT website – http://www.advancedpower.com
APTGF50SK120T
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
200
160
120
80
50
40
30
20
10
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
40
0
0
2
4
6
8
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
300
250
200
150
100
50
18
16
14
12
10
8
6
4
2
VCE=240V
IC = 50A
250µs Pulse Test
< 0.5% Duty cycle
TJ = 25°C
VCE=600V
VCE=960V
TJ=125°C
TJ=25°C
0
0
0
50
100 150 200 250 300 350
Gate Charge (nC)
0
4
8
12
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
250µs Pulse Test
Ic=100A
TJ = 25°C
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
Ic=100A
Ic=50A
Ic=50A
Ic=25A
Ic=25A
9
10
11
12
13
14
15
16
-50
-25
0
25
50
75
100 125
V
GE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
90
80
70
60
50
40
30
20
10
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 6
APT website – http://www.advancedpower.com
APTGF50SK120T
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
45
40
35
30
25
400
350
300
250
200
VCE = 600V
VGE=15V,
TJ=125°C
RG = 5Ω
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
RG = 5Ω
0
25
50
75
100
125
0
25
50
75
100
125
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
140
100
60
50
40
30
20
VCE = 600V
R
G = 5Ω
TJ = 125°C
VGE=15V
75
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
0
25
50
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
24
20
16
12
8
8
6
4
2
0
TJ=125°C,
GE=15V
VCE = 600V
VCE = 600V
VGE = 15V
TJ = 125°C
V
R
G = 5Ω
R
G = 5Ω
TJ = 25°C
TJ=25°C,
GE=15V
V
4
0
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
18
8
6
4
2
0
VCE = 600V
VCE = 600V
GE = 15V
Eon, 50A
16
14
12
10
8
V
GE = 15V
V
RG = 5Ω
TJ= 125°C
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 50A
25
6
Eon, 25A
Eoff, 25A
100
4
2
Eoff, 25A
30
0
0
10
20
40
50
0
50
75
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 6
APT website – http://www.advancedpower.com
APTGF50SK120T
Capacitance vs Collector to Emitter Voltage
Minimum Switching Safe Operating Area
160
140
120
100
80
10000
1000
100
Cies
60
Coes
Cres
40
20
0
0
10
20
30
40
50
0
400
800
1200
V
CE, Collector to Emitter Voltage (V)
V
CE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.35
0.3
0.9
0.7
0.25
0.2
0.15
0.1
0.05
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
70
60
50
40
30
20
10
0
VCE = 600V
D = 50%
RG = 5Ω
TJ = 125°C
10
20
30
40
50
60
IC, Collector Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
APT website – http://www.advancedpower.com
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