APTGF50SK120T1G [MICROSEMI]
Buck chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF50SK120T1G |
| 厂家： | 
Microsemi |
| 描述： | Buck chopper NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF50SK120T1G
VCES = 1200V
Buck chopper
IC = 50A @ Tc = 80°C
NPT IGBT Power Module
Application
5
6
11
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
CR1
Features
7
8
•
Non Punch Through (NPT) Fast IGBT
3
4
-
-
-
-
-
-
-
Low voltage drop
NTC
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
CR2
1
Low leakage current
RBSOA and SCSOA rated
•
•
•
Very low stray inductance
2
12
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
75
IC
Continuous Collector Current
A
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
150
±20
V
W
Tc = 25°C
Tj = 150°C
Maximum Power Dissipation
312
RBSOA Reverse Bias Safe Operating Area
100A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 6
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APTGF50SK120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
GE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
250
µA
500
ICES
Zero Gate Voltage Collector Current
VCE = 1200V
3.2
4.0
3.7
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 50A
Tj = 125°C
VGE = VCE, IC = 1 mA
VGE = 20 V, VCE = 0V
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Input Capacitance
3450
VGE = 0V
V
CE = 25V
pF
Output Capacitance
330
220
330
35
f = 1MHz
VGS = 15V
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
VBus = 600V
nC
IC = 50A
200
35
Inductive Switching (25°C)
VGE = 15V
Td(on)
Tr
Rise Time
65
320
30
VBus = 600V
ns
Td(off) Turn-off Delay Time
IC = 50A
RG = 5 Ω
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Inductive Switching (125°C)
35
VGE = ±15V
65
360
40
V
Bus = 600V
ns
Td(off) Turn-off Delay Time
IC = 50A
Tf
Fall Time
RG = 5 Ω
V
GE = ±15V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
6.9
VBus = 600V
IC = 50A
mJ
Eoff
Turn-off Switching Energy
3.05
RG = 5 Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
1200
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
500
IRM
VR=1200V
µA
IF
60
2.5
3
A
V
IF = 60A
IF = 120A
IF = 60A
3
VF
Diode Forward Voltage
Tj = 125°C
1.8
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
265
350
560
2890
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 800V
di/dt =200A/µs
Qrr
nC
2 – 6
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APTGF50SK120T1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.4
0.9
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
150
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 6
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APTGF50SK120T1G
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
160
120
80
40
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
30
TJ=25°C
TJ=25°C
TJ=125°C
20
TJ=125°C
10
40
0
0
0
2
4
6
8
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
250
200
150
100
50
18
16
14
12
10
8
VCE=240V
250µs Pulse Test
TJ=25°C
IC = 50A
J = 25°C
< 0.5% Duty cycle
T
VCE=600V
VCE=960V
6
4
2
TJ=125°C
TJ=25°C
0
0
0
50
100 150 200 250 300 350
Gate Charge (nC)
0
4
8
12
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = 25°C
250µs Pulse Test
Ic=100A
Ic=50A
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
Ic=25A
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
9
10
11
12
13
14
15
16
25
50
75
100
125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
70
60
50
40
30
20
10
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
25
50
75
100
125
25
50
75
100
125
150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 – 6
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APTGF50SK120T1G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
45
40
35
30
25
400
VCE = 600V
RG = 5Ω
VGE=15V,
TJ=125°C
350
VGE = 15V
300
VGE=15V,
TJ=25°C
250
VCE = 600V
RG = 5Ω
200
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
140
100
60
50
40
30
20
VCE = 600V
RG = 5Ω
TJ = 125°C
VGE=15V
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
0
25
50
75
100
125
0
25
50
75
100
125
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
24
20
16
12
8
8
6
4
2
0
VCE = 600V
TJ=125°C,
GE=15V
VCE = 600V
TJ = 125°C
R
G = 5Ω
V
VGE = 15V
RG = 5Ω
TJ = 25°C
TJ=25°C,
VGE=15V
4
0
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
8
6
4
2
0
18
VCE = 600V
Eon, 50A
VCE = 600V
VGE = 15V
TJ= 125°C
16
14
12
10
8
VGE = 15V
RG = 5Ω
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 50A
6
Eon, 25A
4
2
Eoff, 25A
Eoff, 25A
30
0
0
10
20
40
50
25
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 – 6
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APTGF50SK120T1G
Capacitance vs Collector to Emitter Voltage
Reverse Bias Safe Operating Area
120
10000
1000
100
100
80
60
40
20
0
Cies
Coes
Cres
0
10
20
30
40
50
0
400
800
1200
V
CE, Collector to Emitter Voltage (V)
V
CE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.9
0.35
0.3
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.05
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
VCE = 600V
D = 50%
100
80
60
40
20
0
R
G = 5Ω
TJ = 125°C
TC= 75°C
ZVS
ZCS
Hard
switching
10
20
30
40
50
60
IC, Collector Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
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