APTM20DUM04 [ADPOW]
Dual common source MOSFET Power Module; 双共源MOSFET功率模块
| 型号： | APTM20DUM04 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual common source MOSFET Power Module |
| 文件： | 总6页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DUM04
VDSS = 200V
Dual common source
RDSon = 4mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 372A @ Tc = 25°C
Application
Sꢁ AC Switches
Sꢁ Switched Mode Power Supplies
Sꢁ Uninterruptible Power Supplies
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
G1
D1
S
D2
Sꢁ High level of integration
S1
Benefits
S2
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Low profile
G2
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
200
372
278
1488
±30
4
V
Tc = 25°C
Tc = 80°C
ID
A
IDM
VGS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
1250
100
50
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM20DUM04
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
Tj = 125°C
200
1000
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 160V
VGS = 10V, ID = 186A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
4
mꢀ
V
nA
3
5
IGSS
Gate – Source Leakage Current
±200
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
28.9
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
9.32
0.58
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
560
212
268
32
64
88
VGS = 10V
VBus = 100V
ID = 372A
nC
Qgd
Td(on)
Tr
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
Td(off) Turn-off Delay Time
Tf
ID = 372A
RG = 1.2ꢀ
Fall Time
116
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
3396
3716
3744
3944
V
GS = 15V, VBus = 133V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 372A, RG = 1.2Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 133V
ID = 372A, RG = 1.2Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
372
A
(Body diode)
278
1.3
5
VSD
Diode Forward Voltage
VGS = 0V, IS = - 372A
V
V/ns
dv/dt Peak Diode Recovery ꢁ
IS = -372A, VR = 133V
diS/dt = 400A/µs
IS = -372A, VR = 133V
diS/dt = 400A/µs
trr
Reverse Recovery Time
360
ns
Qrr
Reverse Recovery Charge
26.8
µC
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
ꢁ dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ? - 372A di/dt ? 700A/µs
VR ? VDSS Tj ? 150°C
2 – 6
APT website – http://www.advancedpower.com
APTM20DUM04
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.1 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
3
V
150
125
100
5
3.5
280
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM20DUM04
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.08
0.06
0.04
0.02
0
0.7
0.5
0.3
Single Pulse
0.01
0.1
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
1400
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
VGS=15V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
TJ=25°C
7V
TJ=125°C
6.5V
TJ=-55°C
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
8
9 10
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
400
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
VGS=10V @ 186A
350
300
250
200
150
100
50
VGS=10V
VGS=20V
0.9
0.8
0
0
100 200 300 400 500 600
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM20DUM04
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 186A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
10000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1000
100
10
limited by
RDSon
100µs
1ms
10ms
100ms
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
ID=372A
TJ=25°C
VDS=40V
VDS=100V
Ciss
12
10
8
Coss
10000
1000
100
VDS=160V
6
Crss
4
2
0
0
80 160 240 320 400 480 560 640
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM20DUM04
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
120
100
80
60
40
20
0
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
td(off)
tf
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
tr
60
td(on)
40
20
0
0
100 200 300 400 500 600
0
100 200 300 400 500 600
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
10
8
8
6
4
2
0
VDS=133V
ID=372A
TJ=125°C
VDS=133V
Eoff
RG=1.2Ω
TJ=125°C
L=100µH
Eoff
L=100µH
Eon
6
Eon
4
2
0
100 200 300 400 500 600
0
2.5
5
7.5
10
12.5
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
TJ=150°C
VDS=133V
D=50%
RG=1.2Ω
TJ=125°C
TJ=25°C
0
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
50
100 150 200 250 300 350
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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