APTM20DUM05 [ADPOW]
Dual common source MOSFET Power Module; 双共源MOSFET功率模块
| 型号： | APTM20DUM05 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual common source MOSFET Power Module |
| 文件： | 总6页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DUM05
VDSS = 200V
Dual common source
RDSon = 5mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 317A @ Tc = 25°C
Application
Sꢁ AC Switches
Sꢁ Switched Mode Power Supplies
Sꢁ Uninterruptible Power Supplies
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
Sꢁ High level of integration
G1
D1
S
D2
S1
Benefits
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Low profile
S2
G2
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
200
317
237
1268
±30
5
V
Tc = 25°C
Tc = 80°C
ID
A
IDM
VGS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
1136
89
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM20DUM05
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA
200
V
VGS = 0V,VDS = 200V Tj = 25°C
200
1000
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 158.5A
VGS = VDS, ID = 10mA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
5
mꢀ
V
nA
3
5
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
27.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
8.72
0.38
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
448
172
188
28
56
81
VGS = 10V
VBus = 100V
ID = 300A
nC
Qgd
Td(on)
Tr
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
Td(off) Turn-off Delay Time
Tf
ID = 300A
RG = 1.2ꢀ
Fall Time
99
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
1852
1820
2432
2124
V
GS = 15V, VBus = 133V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 300A, RG = 1.2Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ Max Unit
Continuous Source current
Tc = 25°C
Tc = 80°C
317
IS
A
(Body diode)
237
1.3
5
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery ꢁ
VGS = 0V, IS = - 300A
V
V/ns
trr
Reverse Recovery Time
284
ns
IS = -300A, VR = 100V
diS/dt = 400A/µs
Qrr
Reverse Recovery Charge
12.24
µC
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
ꢁ dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ? - 300A di/dt ? 700A/µs
VR ? VDSS Tj ? 150°C
2 – 6
APT website – http://www.advancedpower.com
APTM20DUM05
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.11 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
3
V
150
125
100
5
3.5
280
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM20DUM05
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
800
600
400
200
0
1000
800
600
400
200
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
9V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
TJ=-55°C
5.5V
0
5
10
15
20
25
2
3
4
5
6
7
8
9
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.2
1.15
1.1
320
280
240
200
160
120
80
Normalized to
VGS=10V @ 158.5A
VGS=10V
1.05
1
VGS=20V
0.95
0.9
40
0
0
100
200
300
400
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM20DUM05
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 158.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
10000
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited
by RDSon
100µs
1ms
10ms
DC line
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
ID=300A
TJ=25°C
Ciss
10
8
Coss
10000
1000
100
VDS=160V
6
4
Crss
2
0
0
100
200
300
400
500
0
10
20
30
40
50
V
DS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM20DUM05
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
90
80
70
60
50
40
30
20
10
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
tf
td(off)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
tr
60
40
td(on)
450
20
0
50
150
250
350
550
50
150
250
350
450
550
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
5.5
5
5
4
3
2
1
0
VDS=133V
ID=300A
TJ=125°C
L=100µH
VDS=133V
RG=1.2Ω
Eon
Eoff
TJ=125°C
L=100µH
Eoff
4.5
4
Eon
3.5
3
2.5
2
50
150
250
350
450
550
0
2.5
5
7.5
10
12.5 15
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
VDS=133V
D=50%
RG=1.2Ω
TJ=125°C
TJ=150°C
TJ=25°C
1
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
30
70 110 150 190 230 270
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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