APTM20DHM20T3G [MICROSEMI]
Asymmetrical - Bridge MOSFET Power Module; 非对称 - 桥MOSFET功率模块
| 型号： | APTM20DHM20T3G |
| 厂家： | 
Microsemi |
| 描述： | Asymmetrical - Bridge MOSFET Power Module |
| 文件： | 总7页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DHM20T3G
VDSS = 200V
RDSon = 20mΩ typ @ Tj = 25°C
ID = 89A @ Tc = 25°C
Asymmetrical - Bridge
MOSFET Power Module
13
14
Q1
Application
Welding converters
CR3
•
•
•
Switched Mode Power Supplies
Switched Reluctance Motor Drives
18
19
22
7
Features
23
8
•
Power MOS 7® MOSFETs
Q4
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
CR2
4
3
29
30
31
32
•
•
Kelvin source for easy drive
Very low stray inductance
15
16
R1
-
Symmetrical design
•
•
Internal thermistor for temperature monitoring
High level of integration
28 27 26 25
23 22
20 19 18
29
30
16
Benefits
15
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
Low profile
RoHS Compliant
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
89
66
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
356
±30
24
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
357
89
50
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 7
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APTM20DHM20T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 44.5A
VGS = VDS, ID = 2.5mA
500
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
20
24
5
mΩ
V
3
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6850
2180
97
V
V
GS = 0V
DS = 25V
pF
f = 1MHz
Qg
Qgs
Qgd
Td(on)
Tr
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
112
43
47
28
56
81
99
V
GS = 10V
VBus = 100V
ID = 75A
nC
Inductive switching @ 125°C
V
V
ID = 75A
RG = 5Ω
GS = 15V
Bus = 133V
ns
Td(off) Turn-off Delay Time
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 75A, RG = 5Ω
Eon
Turn-on Switching Energy
463
455
608
531
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 75A, RG = 5Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
200
V
Tj = 25°C
VR=200V
250
500
IRM
µA
Tj = 125°C
IF
Tc = 80°C
100
A
V
IF = 100A
IF = 200A
1
1.4
0.9
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
60
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 100A
VR = 133V
di/dt =200A/µs
110
200
840
Qrr
nC
2 – 7
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APTM20DHM20T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
MOSFET
diode
0.35
0.55
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
4000
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
110
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT =
⎡
⎤
⎥
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25 / 85
⎜
T25
T
⎢
⎣
⎥
⎦
⎝
⎠
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 – 7
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APTM20DHM20T3G
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.5
0.25
0.2
0.15
0.1
0.3
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
200
160
120
80
250
200
150
100
50
VDS > ID(on)xRDS(on)MAX
VGS=15&10V
9V
250µs pulse test @ < 0.5 duty cycle
7.5V
7V
6.5V
6V
TJ=25°C
40
TJ=125°C
5.5V
TJ=-55°C
0
0
0
5
10
15
20
25
2
3
4
5
6
7
8
9
V
GS, Gate to Source Voltage (V)
V
DS, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.2
1.15
1.1
100
80
60
40
20
0
Normalized to
GS=10V @ 44.5A
V
VGS=10V
1.05
1
VGS=20V
0.95
0.9
0
20
40
60
80
100 120
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 7
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APTM20DHM20T3G
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 44.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by
RDSon
100µs
1ms
10ms
Single pulse
TJ=150°C
TC=25°C
DC line
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
12
VDS=40V
ID=75A
10
8
TJ=25°C
VDS=100V
Ciss
10000
1000
100
VDS=160V
Coss
6
4
Crss
2
0
10
0
25
50
75
100
125
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 7
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APTM20DHM20T3G
Delay Times vs Current
Rise and Fall times vs Current
160
90
80
70
60
50
40
30
20
10
VDS=133V
140
RG=5Ω
tf
TJ=125°C
120
L=100µH
100
td(off)
VDS=133V
RG=5Ω
80
TJ=125°C
L=100µH
tr
60
40
20
0
td(on)
0
25
50
75
100 125 150
0
25
50
75
100 125 150
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
1500
1200
1000
800
600
400
200
0
VDS=133V
ID=75A
VDS=133V
Eon
Eoff
RG=5Ω
1250
1000
750
TJ=125°C
L=100µH
TJ=125°C
Eoff
L=100µH
Eon
500
Eoff
250
0
25
50
75 100 125 150
0
5
10 15 20 25 30 35 40
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
350
300
250
200
150
100
50
VDS=133V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
100
10
1
TJ=150°C
ZVS
ZCS
TJ=25°C
Hard
switching
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
10 20 30 40 50 60 70 80
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
6 – 7
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APTM20DHM20T3G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
120
100
80
200
150
100
50
TJ=125°C
VR=133V
100 A
130 A
TJ=125°C
TJ=25°C
50 A
60
0
40
0.0
0.5
1.0
1.5
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
IRRM vs. Current Rate of Charge
2.00
50
40
30
20
10
0
100 A
TJ=125°C
VR=133V
TJ=125°C
100 A
130 A
1.75
1.50
1.25
1.00
0.75
0.50
VR=133V
130 A
50 A
50 A
0
200 400 600 800 1000 1200
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
150
3200
2800
2400
2000
1600
1200
800
Duty Cycle = 0.5
TJ=150°C
125
100
75
50
25
0
400
0
1
10
100
1000
25
50
75
100
125
150
VR, Reverse Voltage (V)
Case Temperature (°C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
7 – 7
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