ARF449B [ADPOW]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | ARF449B |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D
S
ARF449A
ARF449B
G
TO-247
Common
Source
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
150V 150W 120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Specified 150 Volt, 81.36 MHz Characteristics:
•
•
•
Output Power = 150 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
ARF449A/449B
UNIT
VDSS
VDGO
ID
Drain-Source Voltage
450
450
Volts
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
9
Amps
Volts
Watts
°C/W
VGS
±30
PD
Total Power Dissipation @ TC = 25°C
Junction to Case
165
RθJC
TJ,TSTG
TL
0.76
-55 to 150
300
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
UNIT
Symbol
BVDSS
MIN
TYP
MAX
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
450
Volts
1
VDS(ON)
On State Drain Voltage (ID(ON) = 5A, VGS = 10V)
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 5A)
25
IDSS
µA
250
±100
IGSS
gfs
nA
3
2
5.8
mhos
Volts
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
ARF449A/449B
Symbol
Ciss
Coss
Crss
td(on)
tr
Characteristic
Test Conditions
GS = 0V
MIN
TYP
980
87
25
5
MAX
1200
120
40
UNIT
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
pF
VDS = 150V
f = 1 MHz
10
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6Ω
3.1
15
3
7
ns
td(off)
tf
Turn-off Delay Time
Fall Time
25
7
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
12
TYP
13
MAX
UNIT
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 81.36 MHz
VGS = 0V
VDD = 150V
η
70
75
%
Pout = 150W
ψ
Electrical Ruggedness VSWR 20:1
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
25
20
15
10
5
3000
Class C
= 150V
V
P
C
DD
iss
1000
500
= 150W
out
C
oss
100
50
C
rss
10
0
30
45
60
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
75
90
105
120
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
16
12
8
50
10µS
T
= -55°C
J
100µS
OPERATION HERE
LIMITED BY R
(ON)
DS
V
> I (ON) x
R (ON)MAX.
DS
250µSEC. PULSE TEST
DS
D
10
5
@ <0.5 % DUTY CYCLE
1mS
10mS
1
100mS
DC
.5
4
T
= +125°C
T
= -55°C
J
T
T
=+25°C
=+150°C
J
C
J
SINGLE PULSE
T
= +25°C
J
.1
0
0
2
4
6
8
1
5
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
50 100
500
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ARF449A/449B
1.2
1.1
1.0
0.9
0.8
0.7
0.6
25
20
15
10
5
V
=8, 10 & 15V
GS
6.5V
6V
5.5V
5V
4.5V
0
-50 -25
0
25 50 75 100 125 150
1
5
10
15
20
25
30
TC, CASE TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Threshold Voltage vs Temperature
Figure 6, Typical Output Characteristics
160
14
12
10
8
Class C
V
= 150V
DD
f = 81.36 MHz
Class C
120
80
40
0
V
= 150V
DD
f = 81.36 MHz
6
0
2
4
6
8
10
0
40
80
120
160
PIN, POWER IN (WATTS)
POUT, POWER OUT (WATTS)
Figure 7, Typical Power Out vs Power In
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.8
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
t
1
0.01
SINGLE PULSE
t
0.005
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
Zin (Ω)
ZOL (Ω)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
0.35
0.56
0.90
+
+
+
j 1.1
j 2.5
j 3.8
Zin
ZOL
-
-
gate shunted by 25Ω
conjugate of optimum load impedance for 150W at 150V
ARF449A/449B
81.36 MHz Test Circuit
Parts List
C1 -- 680pF Unelco
L5
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 0.8" #18 AWG into hairpin ~19nH
L2-L3 -- 3t #18 AWG .25" ID ~50nH
L4 -- 10t #18 AWG .25" ID ~470nH
L5 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
+
150V
-
C6
C7
L4
T1 -- 4:1 Broadband Transformer
RF Output
C5
L2
L3
C3
C4
L1
DUT
RF Input
T1
C2
C1
R1
TO-247 Package Outline
Top View
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
Dimensions in Millimeters and (Inches)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
Device
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
ARF449A
Gate
ARF449B
Drain
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Source
Drain
Source
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 9761
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