ARF460B [ADPOW]
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs; N沟道增强型功率MOSFET
| 型号： | ARF460B |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D
S
ARF460A
ARF460B
G
TO-247
Common
Source
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
125V 150W
65MHz
The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 40.68 MHz Characteristics:
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
•
•
•
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 75% (Class C)
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
ARF460A/B
500
UNIT
VDSS
VDGO
ID
Drain-Source Voltage
Volts
Drain-Gate Voltage
500
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
14
Amps
Volts
Watts
°C/W
VGS
±30
PD
Total Power Dissipation @ TC = 25°C
Junction to Case
250
RθJC
TJ,TSTG
TL
0.50
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
UNIT
Symbol
BVDSS
MIN
TYP
MAX
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
Volts
1
VDS(ON)
On State Drain Voltage (ID(ON) = 7A, VGS = 10V)
4
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 7A)
IDSS
µA
250
±100
8
IGSS
gfs
nA
3.3
3
5.5
mhos
Volts
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
ARF460A/B
Symbol
Ciss
Coss
Crss
td(on)
tr
Characteristic
Test Conditions
GS = 0V
MIN
TYP
1200
150
60
MAX
UNIT
1400
300
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
pF
VDS = 150V
f = 1 MHz
100
7
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6Ω
6
ns
td(off)
tf
Turn-off Delay Time
Fall Time
20
4.4
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
13
TYP
15
MAX
UNIT
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 40.68 MHz
VGS = 0V
VDD = 125V
η
70
75
%
Pout = 150W
ψ
Electrical Ruggedness VSWR 10:1
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
5000
C
iss
1000
500
C
oss
C
rss
100
50
10
.1
.5
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
16
12
8
56
T
= -55°C
J
100uS
OPERATION HERE
LIMITED BY R (ON)
DS
V
> I (ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
D
10
5
1mS
10mS
1
100mS
DC
.5
4
T
= +125°C
T = -55°C
J
J
T
T
=+25°C
=+150°C
C
J
T
= +25°C
SINGLE PULSE
J
.1
0
2
V
4
6
8
10
1
5
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
50 100
500
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ARF460A/B
1.2
1.1
1.0
0.9
0.8
0.7
25
20
15
10
5
V
=15 & 10V
9V
8V
GS
7V
6.5V
6V
5.5V
5V
4.5V
0
-50 -25
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
25 50 75 100 125 150
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.60
0.50
0.40
0.30
0.20
0.10
0
0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.1
J
DM θJC
C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
RECTANGULARPULSEDURATION(SECONDS)
10-1
1.0
Figure9,TypicalMaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
RC MODEL
Junction
temp. ( ”C)
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Case temperature
Figure9a,TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
ZOL (Ω)
Z
(Ω)
in
2.0
13.5
27
40
65
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
Z
- Gate shunted with 25Ω
I
= 100mA
DQ
in
ZOL - Conjugate of optimum load for 150 Watts output at V = 125V
dd
ARF460A/B
L4
+
-
C1 -- 2000 pF 100V NPO chip
mounted at gate lead
125V
+
-
Bias
0 - 12V
C7
C8
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 µF 500V ceramic chip
C9 -- 2200 pF 500V chip
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
L2 -- 6t #16 AWG .312" ID .4"L ~185nH
L3 -- 15t #24 AWG .25"ID ~.85uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF460A/B
L3
C6
R1
C9
RF
Input
RF
Output
C2
L1
L2
C5
C4
DUT
C1
R2
C3
40.68 MHz Test Circuit
TO-247 Package Outline
Top View
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
Dimensions in Millimeters and (Inches)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
Device
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
ARF - A
Gate
ARF - B
Drain
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Source
Drain
Source
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
ARF461/EMPBF
Data Line Filter, 1 Function(s), 50V, 5A, LEAD FREE, HERMETIC SEALED, WELDED, CERAMIC PACKAGE-5
INFINEON
ARF461C
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
MICROSEMI
ARF461CG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明