ARF450 [ADPOW]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | ARF450 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Common Source
Push-Pull Pair
ARF450
ARF450
BeO
11405
RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
150V 500W 120MHz
The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull
or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
Specified 150 Volt, 81.36 MHz Characteristics:
High Performance Push-Pull RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Output Power = 500 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Parameter
ARF450
450
UNIT
Volts
Amps
VDSS
Drain-Source Voltage
VDGO
ID
Drain-Gate Voltage
450
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
11
VGS
PD
±30
Volts
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
650
Watts
TJ,TSTG
TL
-55 to 200
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
Volts
1
VDS
5
On State Drain Voltage (ID(ON) = 5.5A, VGS = 10V)
(ON)
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 5.5A)
IDSS
µA
250
±100
IGSS
gfs
nA
35.8
mhos
gfs1 gfs2
0.9
3
1.1
5
Forward Transconductance Ratio (VDS = 25V, ID = 5.5A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
/
VGS
(TH)
Volts
∆VGS
0.1
Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA)
(TH)
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
MIN
TYP
MAX
UNIT
RθJC
RθCS
Junction to Case (per section)
0.54
°C/W
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
0.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA:
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541)382-8028 FAX:(541)388 -0364
Phone:(33) 557 92 15 15 FAX:(33)556479761
EUROPE:
Chemin de Magret
DYNAMIC CHARACTERISTICS (per section)
ARF450
Symbol
Ciss
Coss
Crss
td(on)
tr
Characteristic
Test Conditions
GS = 0V
MIN
TYP
980
87
25
5
MAX
1200
120
40
UNIT
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
pF
ns
VDS = 150V
f = 1 MHz
10
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6 Ω
3.0
15
3
7
td(off)
tf
Turn-off Delay Time
Fall Time
25
7
FUNCTIONAL CHARACTERISTICS (Push-Pull Configuration)
Symbol Characteristic
Test Conditions
MIN
12
TYP
13
MAX
UNIT
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 81.36 MHz
VGS = 0V
VDD = 150V
η
70
75
%
Pout = 500W
ψ
Electrical Ruggedness VSWR 10:1
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per each transistor side unless otherwise specified.
30
25
20
15
10
5
3000
Class C
= 150V
V
P
C
DD
iss
1000
500
= 150W
out
C
oss
100
50
C
rss
10
0
30
45
60
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
75
90
105
120
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
16
12
8
50
100us
T
= -55°C
J
OPERATION HERE
LIMITED BY R (ON)
V
> I (ON) x
R (ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
D
DS
10
5
1ms
10ms
1
100ms
T
T
=+25°C
=+200°C
0.5
4
C
J
T
= +125°C
T
= -55°C
6
J
J
SINGLE PULSE
T
= +25°C
2
J
0
0.1
0
4
8
1
5
10
50 100
500
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF450
1.2
1.1
1.0
0.9
0.8
0.7
0.6
25
20
15
10
5
V
=8, 10 & 15V
GS
6.5V
6V
5.5V
5V
4.5V
0
-50 -25
0
25 50 75 100 125 150
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
Figure 6, Typical Output Characteristics
600
14
12
10
8
VGS = 0
VDD = 150V
f = 81.36 MHz
VGS = 0
450
Push-Pull
V
DD = 150V
f = 81.36 MHz
Push-Pull
300
150
0
6
0
6
12
18
24
30
0
150
300
450
600
PIN, POWER IN (WATTS)
POUT, POWER OUT (WATTS)
Figure 7, Typical Power Out vs Power In
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.6
D=0.5
0.1
.05
0.2
0.1
0.05
Note:
0.02
.01
t
1
0.01
SINGLE PULSE
t
.005
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Table 1 - Typical Class C Large Signal Input-Output Impedance (per section)
Freq. (MHz)
Zin (Ω)
ZOL (Ω)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
0.35
0.56
0.90
+
+
+
j 1.1
j 2.5
j 3.8
Zin
ZOL
-
-
gate shunted by 25Ω
conjugate of optimum load impedance for 150W at 150V
ARF450
+
150V
-
L5
C1 75-380 pF ARCO 465
C2 25-115 pF ARCO 462
C3 -C5 2 nF NPO 500V chip
C6 10 nF 500V chip
L3
C5
C3
C6
C7
R1
100
TL1
L1
C7 .47 uF Ceramic 500V
L1-L2 50 nH 3t # 14 ga .3" dia
L3-L4 .68 uH 12t #24 enam
L5 2t #20 on bead approx 2 uH
R1-R2 100 ohm 1 W
T1
J1
J2
C1
TL2
C2
T2
T1 9:1 RF transformer
T2 1:1 coax balun
TL1-TL2 Printed line 1" long
L2
R2
100
C4
DUT
L4
81.36 MHz Test Circuit
R1
6.8K
+
+
80 V
-
+
T1 9:1 RF Transformer on type 43 beads
T2 4:1 RF Transformer. Made from two pieces
of 25 ohm semi-rigid coax with type 43
ferrite bead loading.
Bias 0-6V
-
C3
.47
C2
10n
C1
1
L3
R4
10K
J2
C6
50p
T1
DUT
R8
20
10W
J1
C4
.1
C5
1n
30 MHz Linear Test Circuit
T2
Typical Mounting
.875
.176
HAZARDOUS MATERIAL
WARNING
1
.375
1
The ceramic portion of the
device between leads and
mounting surface is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
3
ARF450
6
5,8
7
1,4
2
.582
8
BeO
11405
must be taken during handling
Clamp
.062
and mounting to avoid damage
.375
8
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
Compliant
layer
ARF 450
.005
.125
.210
.060 typ.
.210
.125
Heat Sink
dims: inches
Thermal Considerations and Package Mounting:
pound must be used to reduce the effects of small surface irregulari-
ties. The heatsink should incorporate a copper heat spreader to
obtain best results.
The package is designed to be clamped to a heatsink. A clamp-
ed joint maintains the required mounting pressure while allowing for
thermal expansion of both the device and the heat sink. An L-clamp,
a compliant layer of plastic or rubber, and a 6-32 (M3.5) screw can
provide the minimum 35 lb required mounting force. T = 4 in-lb.
The rated 650W power dissipation is only available when the pack-
age mounting surface is at 25˚C and the junction temperature is 200˚C.
The thermal resistance between junctions and case mounting surface
is 0.27 ˚C/W. When installed, an additional thermal impedance of 0.05
˚C/W between the package base and the mounting surface is typical.
Insure that the mounting surface is smooth and flat. Thermal joint com-
USA:
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541)382-8028 FAX:(541)388 -0364
Phone:(33) 557 92 15 15 FAX:(33)556479761
EUROPE:
Chemin de Magret
相关型号：
ARF461/EMPBF
Data Line Filter, 1 Function(s), 50V, 5A, LEAD FREE, HERMETIC SEALED, WELDED, CERAMIC PACKAGE-5
INFINEON
©2020 ICPDF网 联系我们和版权申明