ARF473 [ADPOW]
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs; N沟道增强型功率MOSFET
| 型号： | ARF473 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Common Source
Push-Pull Pair
ARF473
D
S
ARF473
G
G
(Flange)
D
RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
165 V 300 W 150 MHz
TheARF473isamatchedpairofRFpowertransistorsinacommonsourceconfiguration.Itisdesignedforhighvoltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
• Specified 135 Volt, 130 MHz Characteristics:
• High Performance Push-Pull RF Package.
•
•
•
Output Power = 300 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
• High Voltage Breakdown and Large SOA
for Superior Ruggedness.
• Low Thermal Resistance.
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Parameter
ARF473
500
UNIT
VDSS
Drain-Source Voltage
Volts
ID
VGS
PD
10
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
(each device)
Amps
±30
Volts
500
Total Device Dissipation @ TC = 25°C
Watts
TJ,TSTG
TL
-55 to 200
300
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
Volts
1
VDS
4
On State Drain Voltage (ID(ON) = 5A, VGS = 10V)
(ON)
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 5A)
IDSS
µA
250
±100
IGSS
gfs
nA
4
0.9
3
6
mhos
gfs1 gfs2
1.1
5
Forward Transconductance Match Ratio (VDS = 25V, ID = 5A)
Gate Threshold Voltage (VDS = VGS, ID = 200mA)
/
VGS
(TH)
Volts
∆VGS
0.1
Gate Threshold Voltage Match (VDS = VGS, ID = 200mA)
(TH)
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
RθJC
RθCS
Junction to Case
0.35
°C/W
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
0.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS (per section)
ARF473
UNIT
Symbol
Ciss
Coss
Crss
td(on)
tr
Characteristic
Test Conditions
GS = 0V
MIN
TYP
1200
140
9
MAX
1600
200
12
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
pF
VDS = 50V
f = 1 MHz
5.1
10
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6 Ω
4.1
8
ns
td(off)
tf
Turn-off Delay Time
Fall Time
12.8
4.0
20
8
FUNCTIONAL CHARACTERISTICS (Push-Pull Configuration)
Symbol Characteristic
Test Conditions
MIN
13
TYP
14
MAX
UNIT
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 130MHz
Idq = 150mA
VDD = 135V
η
50
55
%
Pout = 300W
ψ
Electrical Ruggedness VSWR 5:1
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
26
24
22
20
18
3000
Class AB
V
= 125V
C
DD
out
iss
P
= 300W
1000
500
C
oss
100
50
16
14
12
10
C
rss
10
.1
0
25
50
75
100
125
150
.5
1
5
10
50
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure2,TypicalCapacitancevs.Drain-to-SourceVoltage
12
10
80
DATA FOR BOTH SIDES
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
100us
IN PARALLEL
T = -55°C
J
OPERATION HERE
LIMITED BY R
(ON)
DS
8
6
4
1ms
10
5
10ms
T
= +25°C
J
T
T
J
=+25°C
=+200°C
2
0
C
T
= +125°C
100ms
DC
J
SINGLE PULSE
1
0
1
2
3
4
5
6
1
5
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
50 100
500
V
GS,GATE-TO-SOURCEVOLTAGE(VOLTS)
Figure 3, Typical Transfer Characteristics
ARF473
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
20
15
10
5
V
=15 & 10V
GS
8V
6V
9V
5.5V
5V
4.5V
4V
0
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TC,CASETEMPERATURE(°C)
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure6,TypicalOutputCharacteristics
Figure5,TypicalThresholdVoltagevsTemperature
0.4
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
SINGLE PULSE
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
ZOL (Ω)
Freq. (MHz)
Z
in
(Ω)
27.12
40.68
63.8
81.36
127.4
4.78 - j 14.3
1.96 - j 9
0.59 - j 4.1
0.31 - j 1.65
0.4 + j 2.66
49 - j 38.8
33.6 - j 39.5
18 - j 33.5
12.3 - j 29
5.5 - j 20.3
Z
- Gate shunted with 100Ω
I
= 75 mA each side
in
DQ
ZOL - Conjugate of optimum load for 300 Watts output at V = 125V
Input and output impedances are measured from gate to gate and
drain to drain respectively
dd
ARF473
81.36 MHz Test amplifier Po = 500W @130 V
C1 10-80 pF trimmer ARCO 462
C2-4 1000 pF NPO 500V chip
C5-C9 10 nF 500V chip
+
130V
-
L3
L1
C5
C10
Vg1
R1
C10 .47 uF Ceramic 500V
L1 680 nH 12t #24 enam .312" dia
L2 55 nH 3t #18 enam .25" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH
R1-2 100 Ω 0.5 W
T1 4:1 RF transformer on two beads same as L3.
T2 1:1 coax balun. Fair-Rite 2643665902 bead
on 1.5" RG-303 50 Ω teflon coax.
TL1-2 Printed line L=1.2" w=.23"
TL3-4 Printed line L=.25" w=.23"
TL5-6 Printed line L=0.25" w=.23"
TL3
C6
C7
TL5
C3
C4
T2
T1
J1
TL1
C2
C1
L2
J2
TL2
C8
C9
0.23" wide stripline on FR-4 board is ~32Ω Z
o
R2
Vg2
TL4
TL6
DUT
Peak Output Power vs... Vdd
900
800
700
600
500
400
300
200
100
0
1.2
1
Notes:
Max
Duty Cycle
The value of L2 must be adjusted as the
supply voltage is changed to maintain
resonance in the output circuit. At 81 MHz its
value changes from approximately 50 nH at
100V to 70 nH at 165V.
0.8
0.6
0.4
0.2
0
P Watts
o
The duty cycle past 100V must be reduced to
insure power dissipation is within the limits of
the device. Maximum pulse length should be
100mS or less. See figure 7.
80
100
120
140
160
Drain Supply Voltage Vdd
1.100
.435
HAZARDOUS MATERIAL
WARNING
1
2
4
The ceramic portion of the
0.400
0.390
Pin 1. Drain
2. Drain
device between leads and
mounting flange is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
5
3. Gate
4. Gate
5. Source
3
0.200
.065 rad 2 PL
.005
.225
.060
.107
1.340
.210
Package Dimensions (inches)
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