AO3700L [AOS]
Transistor;
| 型号： | AO3700L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
VDS (V) = 30V
The AO3700 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3700 is Pb-free (meets ROHS & Sony
259 specifications). AO3700L is a Green Product ordering
option. AO3700 and AO3700L are electrically identical.
ID = 3.3A (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
D
SOT-23-5
Top View
K
D
K
G
S
A
1
2
3
5
4
G
S
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
MOSFET
30
Schottky
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±12
3.3
TA=25°C
TA=70°C
ID
A
Continuous Drain Current
A
2.6
B
IDM
Pulsed Drain Current
10
VKA
Schottky reverse voltage
20
2
V
A
TA=25°C
TA=70°C
IF
IFM
A
Continuous Forward Current
1
B
Pulsed Forward Current
10
TA=25°C
TA=70°C
1.15
0.7
0.92
0.59
PD
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
80.3
117
43
Max
110
150
80
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
RθJA
A
Steady-State
Steady-State
°C/W
°C/W
C
RθJL
Maximum Junction-to-Lead
Thermal Characteristics Schottky
A
t ≤ 10s
Maximum Junction-to-Ambient
109.4
136.5
58.5
135
175
80
RθJA
RθJL
A
Steady-State
Steady-State
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
AO3700
Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
100
2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.4
VGS=4.5V, VDS=5V
10
A
VGS=10V, ID=3.3A
51
64
65
90
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=4.5V, ID=3.0A
60
75
V
GS=2.5V, ID=1A
DS=5V, ID=3.3A
100
11.7
0.81
160
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
IS=1A,VGS=0V
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
226
39
270
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
29
V
GS=0V, VDS=0V, f=1MHz
GS=4.5V, VDS=15V, ID=3.3A
GS=10V, VDS=15V, RL=4.7Ω,
1.4
2.5
5.5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
4.6
1.4
nC
nC
nC
ns
ns
ns
ns
V
V
Gate Source Charge
Gate Drain Charge
0.55
2.6
Turn-On DelayTime
Turn-On Rise Time
3.2
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
14.5
2.1
Turn-Off Fall Time
trr
IF=3.3A, dI/dt=100A/µs
10.2
3.8
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
I =3.3A, dI/dt=100A/µs
F
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
0.5
0.1
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
34
5.2
0.8
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
10
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
3.5V
8
VDS=5V
12
4V
6V
3V
6
4
2
0
9
6
3
0
VGS=2.5V
125°C
25°C
3
0
0.5
1
1.5
2
2.5
3.5
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
200
175
150
125
100
75
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=3.0A
VGS=2.5V
VGS=10V
ID=3.3A
VGS=4.5V
VGS=10V
VGS=2.5V
50
ID=1A
25
0
0.8
150
0
2
4
6
8
10
0
25
50
75
100
125
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
100
90
80
70
60
50
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°
125°C
25°C
ID=3.3A
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
350
300
250
200
150
100
50
5
4
3
2
1
0
VDS=15V
ID=3.3A
Ciss
Crss
Coss
0
0
1
2
3
4
5
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
15
10
5
TJ(Max)=150°C
TJ(Max)=150°C
RDS(ON)
limited
TA=25°C
TA=25°C
10µs
100µs
1ms
10ms
0.1s
1s
10s
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
80
60
40
20
0
10
1
125°C
f = 1MHz
0.1
0.01
0.001
25°C
0.4
0.0
0.2
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
VF (Volts)
VKA (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.4
0.3
0.2
0.1
IF=0.5A
VR=16V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=135°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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