AO8804 [AOS]
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; 常见的漏双N沟道增强型场效应晶体管
| 型号： | AO8804 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2003
AO8804
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8804 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
VDS (V) = 20V
ID = 8A
RDS(ON) < 13mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
RDS(ON) < 19mΩ (VGS = 2.5V)
RDS(ON) < 27mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D2
S2
D1
S1
1
2
3
4
8
7
6
5
D1/D2
S1
D1/D2
S2
S2
G1
G2
S1
G1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
8
6.3
TA=25°C
TA=70°C
ID
IDM
A
Pulsed Drain Current B
30
TA=25°C
TA=70°C
1.5
1.08
-55 to 150
PD
W
Power Dissipation A
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
64
Max
83
120
70
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
RθJA
89
RθJL
53
Alpha & Omega Semiconductor, Ltd.
AO8804
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
VDS=16V, VGS=0V
10
µA
25
10
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
BVGSO
VGS(th)
ID(ON)
±12
0.5
30
V
0.75
1
V
A
On state drain current
10
13
16
14
19
27
mΩ
TJ=125°C
13.3
11.5
15.4
22.2
36
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
V
GS=1.8V, ID=3A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=8A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
S
V
A
0.73
1
2.4
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1810
232
200
1.6
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=8A
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17.9
1.5
4.7
2.5
7.2
49
10.8
20.2
8
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=10V, RL=1.2Ω,
RGEN=3Ω
tD(off)
tf
trr
Qrr
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10
2.5V
4.5V
VDS=5V
2V
125°C
VGS=1.5V
4
25°C
0
0
0
1
2
3
5
0
0.5
1
V
1.5
GS(Volts)
Figure 2: Transfer Characteristics
2
2.5
V
DS (Volts)
Fig 1: On-Region Characteristics
30
25
20
15
10
5
1.6
1.4
1.2
1
VGS=4.5V
VGS=2.5V
ID=5A
VGS=1.8V
VGS=10V
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
35
30
25
20
15
10
5
125°C
ID=5A
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8804
3000
5
4
3
2
1
0
VDS=10V
ID=8A
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
4
8
12
16
20
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
10µs
30
20
10
0
100µs
limited
TJ(Max)=150°C
TA=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=83°C/W
P
0.1
T
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
TSSOP-8 Package Data
SEMICONDUCTOR, INC.
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
SYMBOLS
MIN
NOM
MAX
MIN
NOM
MAX
A
A1
A2
b
c
D
E
E1
e
L
y
- - -
- - -
- - -
1.00
- - -
- - -
3.00
6.40 BSC
4.40
0.65 BSC
0.60
- - -
1.20
0.15
1.05
0.30
0.20
3.10
- - -
- - -
- - -
0.039
- - -
- - -
0.047
0.006
0.041
0.012
0.008
0.122
0.05
0.80
0.19
0.09
2.90
0.002
0.031
0.007
0.004
0.114
0.118
0.252 BSC
0.173
0.0259 (REF)
0.024
- - -
4.30
4.50
0.169
0.177
0.45
- - -
0°
0.75
0.10
8°
0.018
- - -
0°
0.030
0.004
8°
q
- - -
- - -
q
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE:
LOGO - AOS LOGO
LOGO
8 8 0 4
F A W L T
8804
F
A
- PART NUMBER CODE.
- FAB LOCATION
- ASSEMBLY LOCATION
- WEEK CODE.
W
L N
- ASSEMBLY LOT CODE
TSSOP-8 PART NO. CODE
PART NO. CODE
AO8804
8804
UNIT: mm
Rev. A
ALPHA & OMEGA
TSSOP-8 Tape and Reel Data
SEMICONDUCTOR, INC.
TSSOP-8 Carrier Tape
TSSOP-8 Reel
TSSOP-8 Tape
Leader / Trailer
& Orientation
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