AOB462L [AOS]
60V N-Channel MOSFET; 60V N沟道MOSFET![AOB462L](http://pdffile.icpdf.com/pdf2/p00209/img/icpdf/AOB462_1182717_icpdf.jpg)
型号: | AOB462L |
厂家: | ![]() |
描述: | 60V N-Channel MOSFET |
文件: | 总6页 (文件大小:445K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOT462L/AOB462L
60V N-Channel MOSFET
General Description
Product Summary
VDS
60V
The AOT462L/AOB462L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON).This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
35A
< 18mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
D
Top View
Bottom View
D
D
D
D
G
S
G
S
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
60
V
V
Gate-Source Voltage
VGS
±20
35
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
27
A
Pulsed Drain Current C
IDM
120
7
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
A
6
IAS, IAR
26
A
EAS, EAR
101
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.1
PDSM
W
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
RθJA
Typ
45
Max
60
Units
°C/W
°C/W
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
1.25
1.5
Rev 0: Aug 2010
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Page 1 of 6
AOT462L/AOB462L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
2
3.1
VGS=10V, VDS=5V
VGS=10V, ID=30A
TO220
120
A
14.5
25
18
30
mΩ
mΩ
TJ=125°C
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=30A
14.2
24.5
50
17.7
30
TO263
VDS=5V, ID=30A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.73
1
35
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1840 2400
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
185
80
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=30A
VGS=10V, VDS=30V, RL=1Ω,
2.8
4.2
36
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
27.8
9.9
6.6
12
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.2
38
RGEN=3Ω
tD(off)
tf
27
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
64
62
ns
Qrr
47
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2010
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Page 2 of 6
AOT462L/AOB462L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
140
120
100
80
7V
VDS=5V
10V
6V
60
5V
125°C
40
25°C
20
-40°C
VGS=4.5V
0
2
3
4
5
6
7
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
25
22
19
16
13
10
2.2
2
VGS=10V
ID=30A
1.8
1.6
1.4
1.2
1
VGS=10V
0.8
0
25
50
75
100 125 150 175 200
0
20
40
ID (A)
60
80
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
35
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=30A
1.0E+00
125°C
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
-40°C
-40°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
7
12
17
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Aug 2010
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Page 3 of 6
AOT462L/AOB462L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
2000
1500
1000
500
VDS=30V
ID=30A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
10000
1000
100
1000.0
100.0
10.0
RDS(ON)
limited
10µs
TJ(Max)=175°C
TC=25°C
100µs
DC
1ms
TJ(Max)=175°C
TC=25°C
10ms
1.0
10
1
10
VDS (Volts)
100
0.00001 0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2010
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Page 4 of 6
AOT462L/AOB462L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10
1
TA=25°C
TA=100°C
90
60
30
0
TA=150°C
TA=125°C
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
10000
1000
100
10
60
TA=25°C
50
40
30
20
10
0
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Aug 2010
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Page 5 of 6
AOT462L/AOB462L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: Aug 2010
www.aosmd.com
Page 6 of 6
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