AOD4106 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD4106 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4106
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4106 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a low side switch in SMPS and
general purpose applications. Standard Product
AOD4106 is Pb-free (meets ROHS & Sony 259
specifications). AOD4106L is a Green Product ordering
option. AOD4106 and AOD4106L are electrically
identical.
VDS (V) = 25V
ID = 50A (VGS = 20V)
RDS(ON) < 5mΩ (VGS = 20V)
RDS(ON) < 6.5mΩ (VGS = 12V)
RDS(ON) < 8.1mΩ (VGS = 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
D
S
Top View
Drain Connected to
Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current C
±30
50
V
A
TC=25°C
TC=100°C
ID
50
IDM
IAR
EAR
180
30
A
Repetitive avalanche energy L=0.3mH C
135
75
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
38
TA=25°C
6.25
4
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case B
41
50
Steady-State
Steady-State
RθJC
1.5
2.0
Alpha & Omega Semiconductor, Ltd.
AOD4106
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
V
DS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
uA
nA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±30V
VDS=VGS ID=250µA
VGS=12V, VDS=5V
100
4
VGS(th)
ID(ON)
2
3
V
A
180
VGS=20V, ID=20A
4.1
6.5
5.4
6.6
26
5.0
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=12V, ID=20A
VGS=10V, ID=20A
6.5
8.1
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.7
1
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1561 1875
642
pF
pF
pF
Ω
VGS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
323
VGS=0V, VDS=0V, f=1MHz
2.5
3.8
33
SWITCHING PARAMETERS
Qg(12V)
Qg(10V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
26.5
22.5
8.3
10
nC
nC
nC
nC
ns
VGS=10V, VDS=12.5V, ID=20A
Qgd
tD(on)
tr
tD(off)
tf
12
VGS=10V, VDS=12.5V, RL=0.63Ω,
19
ns
RGEN=3Ω
17
ns
9.5
32
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
40
ns
Qrr
24
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Re0: Sept. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD4106
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
150
120
90
60
50
40
30
20
10
0
20V
15V
12V
VDS=5V
VGS=10V
125°C
Vgs=8V
60
25°C
Vgs=7V
-40°C
8
30
0
0
1
2
3
4
5
3
4
5
6
7
9
10
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
8
1.6
1.4
1.2
1
VGS=12V
ID=20A
VGS=20V
VGS=10V
6
VGS=10V
VGS=12V
VGS=20V
4
0.8
0.6
2
0
5
10
15
20
25
30
-50 -25
0
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
15
12
9
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
25°C
125°C
6
-40°C
0.8
3
25°C
0
6
8
10
12
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
14
16
18
20
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
1.0
V
V
Alpha & Omega Semiconductor, Ltd.
AOD4106
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
14
12
10
8
2000
1500
1000
500
0
VDS=12.5V
ID=20A
Ciss
6
Coss
4
2
Crss
0
0
5
10
15
20
25
30
35
40
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
220
10µs
200
180
160
140
120
100
80
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
60
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=2°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD4106
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
80
120
100
80
70
60
50
40
30
20
10
0
TA=25°C
60
TA=150°C
40
20
0
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
1.00E-06
1.00E-05
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1.00E-04
1.00E-03
60
50
40
30
20
10
0
140
120
100
80
TJ(max)=150°C
TA=25°C
60
40
20
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
Single Pulse
T
Ton
T
RθJA=50°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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