AOD4120_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD4120_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4120
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4120 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 20V
ID = 25A (VGS = 10V)
R
R
R
DS(ON) <18 mΩ (VGS = 10V)
DS(ON) <25 mΩ (VGS = 4.5V)
DS(ON) <75 mΩ (VGS = 2.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
D
Bottom View
Top View
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
±16
25
V
VGS
Gate-Source Voltage
V
A
TC=25°C G
TC=100°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
19
IDM
IAR
EAR
75
13
A
Repetitive avalanche energy L=0.3mH C
25
mJ
TC=25°C
33
PD
W
Power Dissipation B
TC=100°C
16.7
2.5
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
1.7
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
17
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
40
50
RθJC
3.6
4.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4120
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
20
V
V
DS=16V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
uA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±16V
100
2
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250μA
GS=10V, VDS=5V
VGS=10V, ID=20A
0.6
75
1.26
V
A
14
21
18
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
V
V
V
GS=4.5V, ID=10A
GS=2.5V, ID=2A
DS=5V, ID=20A
20
25
75
57
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
19
S
V
A
IS=1A, VGS=0V
0.77
1
30
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
162
105
0.9
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.35
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
18
9
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=10V, VDS=10V, ID=20A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
9.5
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: Nov 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
100
80
60
40
20
0
10V
25°C
-40°C
VDS=5V
8V
6V
125°C
4.5V
3.5V
VGS=3V
4
0
0
1
2
3
5
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
1.60
1.40
1.20
1.00
0.80
0.60
80
70
60
50
40
30
20
10
0
VGS=10V, 20A
VGS=2.5V
VGS=4.5V, 10A
VGS=4.5V
VGS=2.5V, 4A
VGS=10V
15
0
5
10
25
30
-50 -25
0
25
50
75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
35
30
25
20
15
10
100
ID=20A
10
1
125°C
125°C
0.1
-40°C
0.01
25°C
0.001
0.0001
0.00001
25°C
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
10
8
Ciss
VDS=12.5V
ID=20A
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100
10
1
200
160
120
80
10μs
100μs
TJ(Max)=175°C
TC=25°C
DC
1ms
RDS(ON)
limited
40
TJ(Max)=175°C, TC=25°C
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
35
30
25
20
15
L ⋅ ID
tA
=
BV −VDD
TA=25°C
10
0
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
T
CASE (°C)
Figure 13: Power De-rating (Note B)
50
30
25
20
15
10
5
TA=25°C
40
30
20
10
0
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
T
CASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
T
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4120
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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