AOD412 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD412 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD412
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD412 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOD412 is Pb-free (meets ROHS
& Sony 259 specifications). AOD412L is a Green
Product ordering option. AOD412 and AOD412L are
electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 7.0mΩ (VGS = 10V)
DS(ON) < 10.5mΩ (VGS = 4.5V)
R
TO-252
D-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
85
V
A
TC=25°C G
TC=100°C B
ID
65
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
200
30
A
Repetitive avalanche energy L=0.1mH C
120
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
14.2
39
Max
20
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
RθJL
0.8
1.5
Alpha & Omega Semiconductor, Ltd.
AOD412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
0.005
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.5
85
2.15
VGS=10V, VDS=5V
A
V
GS=10V, ID=20A
5.5
8.8
7
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
11
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
8.25
60
10.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.72
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1320
533
1600
1.2
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
154
GS=0V, VDS=0V, f=1MHz
0.95
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
26
13.3
3.2
6.6
7.2
12.5
22
32
nC
nC
nC
nC
ns
Qg(4.5V)
16.2
V
GS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
10
18
33
9
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
6
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
29.7
29
36
36
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
4.0V
VDS=5V
125°C
3.5V
25°C
VGS=3V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
11
10
9
1.8
1.6
1.4
1.2
1
ID=20A
VGS=10V
VGS=4.5V
8
VGS=4.5V
7
VGS=10V
6
5
4
0.8
0
10
20
30
40
50
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
16
12
8
ID=20A
25°C
125°C
25°C
4
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
2000
1600
1200
800
400
0
10
VDS=15V
ID=20A
8
Ciss
6
4
2
0
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
VDS (Volts)
20
25
30
Q
g (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
80
60
40
20
0
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
1
DC
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
120
100
80
60
40
20
0
TA=25°C
100
80
60
40
20
0
L⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
100
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Alpha & Omega Semiconductor, Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明