AOD4110 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD4110 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4110
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
The AOD4110 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOD4110 is Pb-free (meets ROHS & Sony
259 specifications).
VDS (V) = 30V
ID =40A (VGS = 10V)
RDS(ON) < 7.2mΩ
(VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
TO-252 D-PAK
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
40
V
A
TC=25°C G
TC=100°C G
Continuous Drain
Current B
ID
40
Pulsed Drain Current C
Continuous Drain
CurrentA
IDM
180
TA=25°C
TA=70°C
22
A
IDSM
IAR
18
Avalanche Current C
25
A
Repetitive avalanche energy L=0.3mH C
EAR
94
mJ
TC=25°C
Power Dissipation B
TC=100°C
63
PD
W
31
TA=25°C
6
4
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
Symbol
Typ
15
41
2
Max
20
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
2.4
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
30
V
V
DS=30V, VGS=0V
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
0.1
VGS(th)
ID(ON)
VDS=VGS ID=250µA
GS=10V, VDS=5V
VGS=10V, ID=20A
1.3
1.6
2
V
A
V
180
6
7.2
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
9.0
8.5
55
11.0
10.5
V
GS=4.5V, ID=20A
DS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
0.37
0.5
40
G
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2154 2650
474
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
185
VGS=0V, VDS=0V, f=1MHz
0.75
1.1
45
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
37
17.8
6.6
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=20A
Qgd
7.6
tD(on)
tr
tD(off)
tf
6.8
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
7.2
25.2
5.8
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
trr
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
ns
Qrr
10.5
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t≤ 10s junction-to-ambient thermal
resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be
used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA
A
curve provides a single pulse rating.
Rev0: Apr.2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
150
120
90
30
25
20
15
10
5
6V
7V
VDS=5V
10V
4.5V
4.0V
125°C
60
3.5V
30
25°C
VGS=3V
0
0
0
1
2
3
DS (Volts)
4
5
1
2
3
4
5
V
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
10
8
1.8
1.6
1.4
1.2
1
ID=20A
VGS=10V
VGS=4.5V
VGS=10V
VGS=4.5V
6
4
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
13
11
9
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
7
5
3
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3600
Vds=15V
ID=20A
3000
2400
1800
1200
600
8
6
4
2
0
Ciss
Crss
Coss
0
0
5
10
15
20
25
30
0
8
16
24
32
40
V
DS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
90
80
70
60
50
100µs
10ms
1ms
DC
1
TJ(Max)=175°C
TC=25°C
0.1
0.01
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=Ton/T
PD
TJ,PK=TC+PD.ZθJC.RθJC
RθJC=2.4°C/W
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
60
45
30
15
0
120
90
60
30
0
TA=25°C
TA=150°C
0.00001
0.000001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
T
CASE (°C)
Figure 13: Power De-rating (Note B)
50
40
30
20
10
0
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B,G)
100
125
150
175
1E-04 0.001 0.01
0.1
1
10
100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Ton
10
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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