AOD4128 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD4128 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4128
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide
Features
excellent RDS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in
CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Standard Product AOD412 8 is Pb-free (meets ROHS &
Sony 259 specifications).
VDS (V) = 25V
ID = 60 A
(VGS = 10V)
RDS(ON) < 4 mΩ (VGS = 10V)
RDS(ON) < 7 mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
Continuous Drain
CurrentG
Pulsed Drain Current C
Avalanche Current C
±20
60
V
TC=25°C
TC=100°C
ID
60
A
IDM
IAR
EAR
165
45
Repetitive avalanche energy L=0.3mH C
mJ
W
304
75
TC=25°C
PD
Power Dissipation B
TC=100°C
37
TA=25°C
2.0
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
25
60
2
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady State
Steady State
18
50
1
RθJA
RθJC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=25V, VGS=0V
25
V
1
5
IDSS
Zero Gate Voltage Drain Current
uA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100
2.5
nA
V
VGS(th)
ID(ON)
1.3
1.6
165
A
VGS=10V, ID=20A
3.4
5.0
5.8
55
4
6
7
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
S
V
A
IS=1A, VGS=0V
Maximum Body-Diode Continuous CurrentG
0.7
1
60
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3578
731
438
2.5
4300
950
615
4
pF
pF
pF
Ω
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
61.8
29.8
8.5
80
39
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=12.5V, ID=20A
Qgs
Qgd
tD(on)
tr
12.9
11.6
17.7
45
VGS=10V, VDS=12.5V,
ns
RL=0.63Ω, RGEN=3Ω
tD(off)
tf
ns
20
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
39
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
48
ns
Qrr
32
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Re0: June. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
165
150
135
120
105
90
60
50
40
30
20
10
0
4.5V
VDS=5V
10V
5V
4V
125°C
75
3.5V
60
45
25°C
VGS=3V
30
-40°C
15
0
0
1
2
3
4
5
0
1
2
3
4
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1
ID=20A
VGS=10V
VGS=4.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
15
20
25
30
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
25°C
25°C
6
1.0E-03
-40°C
0.8
4
1.0E-04
-40°C
4
1.0E-05
2
0.0
0.2
0.4
0.6
1.0
1.2
2
6
8
10
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
8
4500
4000
3500
3000
2500
2000
1500
1000
500
VDS=12.5V
ID=20A
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
g (nC)
Figure 7: Gate-Charge Characteristics
50
60
70
0
5
10
V
15
DS (Volts)
20
25
Q
Figure 8: Capacitance Characteristics
1000
100
10
500
TJ(Max)=175°C
Tc=25°C
RDS(ON)
limited
10us
400
300
200
100
0
100us
1ms
DC
10ms
1
TJ(Max)=175°C
TC=25°C
0.1
0.01
0.1
1
10
100
1E-05 0.0001 0.001 0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4128
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
150
100
50
100
80
60
40
20
0
TA=25°C
0
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
100
500
400
300
200
100
0
80
60
40
20
0
0
25
50
75
100
125
150
175
1E-05 1E-04 0.001 0.01 0.1
1
10
100 1000
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
0.001
Single Pulse
Ton
T
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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