AOD4130 [FREESCALE]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | AOD4130 |
| 厂家： | 
Freescale |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：529K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4130/AOI4130
60V N-Channel MOSFET
General Description
MOSFET technology with a low resistance package to
The AOD4130/AOI4130 combines advanced trench
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
backlighting.
consumer, telecom, industrial power supplies and LED
Features
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
30A
< 24mΩ
< 30mΩ
RDS(ON) (at VGS=4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
60
±20
30
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
20
A
A
IDM
74
6.5
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
5
IAS, IAR
27
A
EAS, EAR
36.5
52
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
25
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12.4
34
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
2.4
2.9
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AOD4130/AOI4130
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=5V, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.8
nA
V
VGS(th)
ID(ON)
1.6
74
2.2
A
19.5
37.5
24
24
45
30
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
55
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.76
1
V
46
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1265 1582 1900
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
40
100
67
130
95
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
1.8
3.6
5.4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
23
11
28.3
13.4
4.5
7.2
7.5
6.5
33
34
16
5.4
10
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.6
4.3
ns
R
GEN=3Ω
tD(off)
tf
ns
7.5
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
15
53
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
22
76
30
ns
Qrr
nC
100
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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AOD4130/AOI4130
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
10V
VDS=5V
4.5V
6V
4V
125°C
25°C
4
VGS=3.5V
0
1
2
3
5
6
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
30
2.8
2.4
2
VGS=4.5V
VGS=10V
ID=20A
25
20
15
10
1.6
1.2
0.8
VGS=10V
VGS=4.5V
ID=20A
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
50
40
30
20
10
0
1.0E+02
ID=20A
125°C
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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AOD4130/AOI4130
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
2000
1500
1000
500
10
VDS=30V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
g (nC)
20
25
30
0
10
20
30
VDS (Volts)
40
50
60
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
DC
100µs
1ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.9°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.000001
0.00001
0.0001
0.001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.01
0.1
1
10
4/6
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AOD4130/AOI4130
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
35
30
25
20
15
10
5
TA=25°C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
5/6
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AOD4130/AOI4130
60V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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