AOL1432 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1432 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1432
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1432 uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOL1432 is Pb-free (meets
ROHS & Sony 259 specifications). AOL1432L is a
Green Product ordering option. AOL1432 and
AOL1432L are electrically identical.
VDS (V) =25V
ID = 44 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
D
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
25
±20
44
V
V
VGS
TC=25°C
Continuous Drain
Current
TC=100°C
ID
31
A
Pulsed Drain Current C
Continuous Drain
Current G
IDM
100
TA=25°C
TA=70°C
12
IDSM
IAR
9
25
A
A
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
EAR
94
mJ
TC=25°C
Power Dissipation B
TC=100°C
30
PD
W
15
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
14.2
48
Max
20
60
5
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
RθJC
3.5
Alpha & Omega Semiconductor, Ltd.
AOL1432
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
μA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250μA
1
1.8
VGS=10V, VDS=5V
VGS=10V, ID=30A
100
A
6.5
9.5
8.5
12
14
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=10A
11.5
35
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A, VGS=0V
0.72
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1430 1716
319
pF
pF
pF
Ω
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
215
VGS=0V, VDS=0V, f=1MHz
1.2
2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
26.4
13.5
3.9
32
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
V
GS=10V, VDS=12.5V, ID=20A
Gate Source Charge
Gate Drain Charge
7.75
6.5
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=12.5V, RL=0.6Ω,
RGEN=3Ω
10
ns
tD(off)
tf
Turn-Off DelayTime
22.7
6.2
ns
Turn-Off Fall Time
ns
trr
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
23.06
15.25
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
27.5
ns
nC
Qrr
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005
Alpha & Omega Semiconductor, Ltd.
AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
80
60
40
20
0
10V
5V
VDS=5V
4.5V
6V
7V
VGS=4V
125°C
25°C
3.5V
3V
0
1
2
3
4
5
0
1
2
3
4
5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
18
16
14
12
10
8
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V, 20A
VGS=10V
6
VGS=4.5V, 20A
4
2
0
0.8
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
1800
1600
1400
1200
1000
800
VDS=12.5V
ID=20A
Ciss
8
6
4
Coss
600
400
2
200
Crss
0
0
0
5
10
15
DS (Volts)
20
25
0
5
10
15
Qg (nC)
20
25
30
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C,
TJ(Max)=175°C
TC=25°C
10μs
100μs
1m
10ms
RDS(ON)
limited
DC
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
40
30
20
10
0
TA=25°C
0
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
50
40
30
20
10
0
TA=25°C
40
30
20
10
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
T
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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