AOL1434A [AOS]
Transistor;
| 型号： | AOL1434A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1434A
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOL1434A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS (V) = 25V
ID = 50A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 5mΩ
DS(ON) <10mΩ
R
100% UIS Tested!
-RoHS Compliant
-Halogen Free
100% R Tested!
g
UltraSO-8TM Top View
D
D
Bottom tab
connected to
drain
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
25
±20
50
V
V
VGS
TC=25°C
TC=100°C
ID
43
A
Pulsed Drain CurrentC
IDM
100
16
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
A
IDSM
IAR
13
50
A
Repetitive avalanche energy L=50uH C
EAR
63
mJ
TC=25°C
Power Dissipation B
TC=100°C
30
PD
W
15
TA=25°C
2
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
14.2
48
Max
20
60
5
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
3.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1434A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
VDS=25V, VGS=0V
10
50
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
2.5
nA
V
VGS(th)
ID(ON)
1.2
1.9
100
A
VGS=10V, ID=30A
4
5
8
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
6
VGS=4.5V, ID=20A
7.7
65
0.7
10
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=30A
S
V
A
IS=1A,VGS=0V
1.0
40
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1500
340
200
1.1
1800
445
285
1.6
2200
580
400
2.4
pF
pF
pF
Ω
VGS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
25
12
31
15
4.8
8.9
8
40
20
7
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=12.5V, ID=30A
Qgs
Qgd
tD(on)
tr
3.5
6.5
13
VGS=10V, VDS=12.5V,
10.4
29
9
ns
RL=0.42Ω, RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=500A/µs
IF=30A, dI/dt=500A/µs
9.5
17
12
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
26
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
The SOA curve provides a single pulse rating.
Rev0:July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1434A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
6V
VDS=5V
10V
4.5V
80
60
40
20
0
60
40
20
0
4V
125°C
3.5V
25°C
VGS=2.5
1
2
3
4
5
0
1
2
3
4
5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
10
8
2
1.8
VGS=4.5V
1.6
1.4
1.2
1
VGS=10V, 30A
6
VGS=4.5V, 20A
4
VGS=10V
2
0
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
20
ID=30A
125°C
15
10
5
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1434A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
2400
2000
1600
1200
800
10
8
VDS=12.5V
ID=30A
Ciss
6
4
Coss
2
400
Crss
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
160
120
80
TJ(Max)=175°C, TC=25°C
TJ(Max)=175°C
TC=25°C
100µs
1ms
10ms
RDS(ON)
limited
DC
40
0.1
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
1
0.1
PD
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1434A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
50
40
30
20
10
40
30
20
10
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
T
CASE (°C)
Figure 13: Power De-rating (Note F)
50
60
50
40
30
20
10
0
TA=25°C
40
30
20
10
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
Single Pulse
RθJA=60°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1434A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
14
12
10
8
3
30
25
20
15
10
5
12
10
8
di/dt=700A/us
Qrr
di/dt=700A/us
125ºC
125ºC
2.5
2
trr
25ºC
25ºC
1.5
1
6
125ºC
25ºC
125ºC
6
4
Irm
4
S
2
0.5
0
25ºC
2
0
0
0
0
5
10
15
20
25
30
0
5
10
15
IB (A)
20
25
30
I
B (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
20
2.5
30
25
20
15
10
5
10
Is=20A
125ºC
Is=20A
125ºC
2
8
6
4
2
0
15
10
5
25ºC
25ºC
125ºC
25ºC
trr
S
1.5
1
125º
Qrr
Irm
25ºC
0.5
0
0
0
0
100 200 300 400 500 600 700 800
0
100 200 300 400 500 600 700 800
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and Soft
Figure 19: Diode Reverse Recovery Charge and
Coefficient vs. di/dt
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1434A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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