AOL1436_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1436_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1436 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is ideally suite
for use as a High side switch in CPU core power
conversion.
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 20V)
R
DS(ON) < 8.2mΩ (VGS = 12V)
RDS(ON) < 11.5mΩ (VGS = 10V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
G
S
drain
S
G
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
25
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current B
±30
50
TC=25°C G
TC=100°C
A
ID
48
Pulsed Drain CurrentC
Continuous Drain
Current A
IDM
120
15
TA=25°C
TA=70°C
A
IDSM
IAR
12
Avalanche CurrentC
28
A
Repetitive avalanche energy L=0.3mHC
EAR
118
43
mJ
TC=25°C
PD
W
Power DissipationB
TC=100°C
22
TA=25°C
2.3
PDSM
W
Power DissipationA
TA=70°C
1.4
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
20
46
Max
25
55
Units
°C/W
°C/W
°C/W
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
Maximum Junction-to-CaseD
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
2.5
3.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1436
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
V
DS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±30V
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=12V, VDS=5V
VGS=20V, ID=20A
VGS=12V, ID=20A
2
3.2
120
A
mΩ
mΩ
5
6.6
8.6
11
6
8.2
RDS(ON)
Static Drain-Source On-Resistance
V
GS=10V, ID=20A
11.5
mΩ
TJ=125°C
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
43
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1100
420
200
0.8
1350
pF
pF
pF
Ω
V
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
1.5
24
SWITCHING PARAMETERS
Qg(12V)
Qg(10V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
20
17
nC
V
GS=10V, VDS=12.5V, ID=20A
6.5
6.8
9.5
13.5
11.5
5.4
32
nC
nC
ns
ns
ns
ns
Qgd
tD(on)
tr
tD(off)
tf
V
GS=10V, VDS=12.5V, RL=0.68Ω,
GEN=0.6Ω
R
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
19
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on steady state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev2: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
120
100
80
60
40
20
0
20V
10V
12V
60
40
20
0
VDS=5V
VGS=8V
125°C
25°C
4
5
6
7
8
9
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
10.0
1.6
1.4
1.2
1
VGS=10V
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
VGS=20V
ID=20A
VGS=12V
VGS=12V
VGS=10V
VGS=10V
VGS=20V
VGS=12V
VGS=20V
25
0.8
0.6
0
5
10
15
20
25
30
-50 -25
0
50
75 100 125 150 175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
18
14
10
6
125°C
125°C
25°C
1.0E-03
1.0E-04
25°C
16
1.0E-05
2
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
8
10
12
14
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
20
18
16
14
12
10
8
VDS=12.5V
ID=20A
Ciss
1400
1200
1000
800
600
400
200
0
Coss
6
Crss
4
2
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
140
TJ(Max)=175°C
TC=25°C
120
100
80
10µs
100µs
RDS(ON)
limited
100ms
DC
60
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
20
0.01
0.1
1
10
100
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
100
80
60
40
20
0
TA=25°C
40
30
20
10
0
25°C
150°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
60
50
40
30
20
10
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
Single Pulse
0.0001
RθJA=55°C/W
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1436
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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