AOL1432A [FREESCALE]
N-Channel SDMOSTM POWER Transistor; N沟道SDMOSTM功率晶体管
| 型号： | AOL1432A |
| 厂家： | 
Freescale |
| 描述： | N-Channel SDMOSTM POWER Transistor |
| 文件： | 总7页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1432A
N-Channel SDMOSTM POWER Transistor
General Description
The AOL1432A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
Features
VDS (V) = 25V
ID = 44A
DS(ON) < 7.5mΩ (VGS = 10V)
RDS(ON) <14mΩ (VGS = 4.5V)
(VGS = 10V)
R
UltraSO-8TM Top View
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
25
±20
44
V
V
VGS
TC=25°C
TC=100°C
ID
31
Pulsed Drain Current C
IDM
120
A
Continuous Drain
Current A
Avalanche Current C
Repetitive avalanche energy L=50μH C
TA=25°C
TA=70°C
12
10
IDSM
IAR
35
EAR
31
mJ
W
TC=25°C
30
PD
Power Dissipation B
TC=100°C
15
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
14.2
48
Max
20
60
5
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Steady-State
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
RθJC
3.5
1/7
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AOL1432A
N-Channel SDMOSTM POWER Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
V
DS=25V, VGS=0V
10
μA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250μA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1.2
2
120
A
V
GS=10V, ID=30A
6
7.5
12
14
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
8.6
11.5
50
V
V
GS=4.5V, ID=20A
DS=5V, ID=30A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=1A, VGS=0V
0.7
1
Maximum Body-Diode Continuous Current
44
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
990
210
125
1.1
1180 1450
pF
pF
pF
Ω
VGS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
275
175
1.7
350
245
2.5
V
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18
9
21.7
11
26
13
5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=12.5V, ID=30A
3
4
4.5
6.4
6.8
13.8
21.5
8.7
10.6
16
9
VGS=10V, VDS=12.5V,
ns
RL=0.42Ω, RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=500A/μs
IF=30A, dI/dt=500A/μs
8.4
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
20
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0 : July 2008
2/7
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AOL1432A
N-Channel SDMOSTM POWER Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
5V
VDS=5V
6V
7V
4.5V
4V
VGS=3.5V
125°C
25°C
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
18
16
14
12
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V, 30A
VGS=4.5V
VGS=10V
6
4
VGS=4.5V, 20A
2
0
0.8
0
5
10
15
D (A)
20
25
30
I
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100 125 150 175 200
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=30A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/7
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AOL1432A
N-Channel SDMOSTM POWER Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
VDS=12.5V
ID=30A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
10μs
TJ(Max)=175°C
TA=25°C
RDS(ON)
100μs
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/7
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AOL1432A
N-Channel SDMOSTM POWER Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
0.00001
0
0
25
50
75
100
125
150
175
0.000001
0.0001
0.001
TCASE (°C)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Figure 13: Power De-rating (Note B)
10000
1000
100
10
50
40
30
20
10
0
TA=25°C
1
0
25
50
75
100
125
150
175
0
0
0
0.01 0.1
1
10 100 1000
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
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AOL1432A
N-Channel SDMOSTM POWER Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
14
12
10
8
3
30
25
20
15
10
5
12
10
8
di/dt=800A/us
di/dt=800A/us
2.5
2
125ºC
125ºC
trr
25ºC
25ºC
1.5
1
6
125ºC
Qrr
Irm
125ºC
25ºC
6
4
4
S
25ºC
2
0.5
0
2
0
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IB (A)
IB (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
15
2.5
2
25
20
15
10
5
10
8
Is=20A
Is=20A
125ºC
125ºC
25ºC
12
9
25ºC
1.5
1
6
trr
S
125º
400
125ºC
25ºC
6
4
3
0.5
Qrr
Irm
2
25ºC
0
0
0
0
0
200
400
600
800
1000
0
200
600
800
1000
di/dt (A/μs)
di/dt (A/μs)
Figure 20: Diode Reverse Recovery Time and Soft
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Coefficient vs. di/dt
6/7
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AOL1432A
N-Channel SDMOSTM POWER Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
7/7
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