AOL1442 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1442 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1442
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1442 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOL1442 is Pb-free (meets ROHS & Sony
259 specifications). AOL1442L is a Green Product
ordering option. AOL1442 and AOL1442L are
electrically identical.
VDS (V) = 30V
ID = 75A
(VGS = 10V)
RDS(ON) < 5mΩ (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
S
Fits SOIC8
footprint !
D
Bottom tab
connected to
G
drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
CurrentG
30
V
V
VGS
±20
TC=25°C
75
TC=100°C
ID
56
A
Pulsed Drain Current C
IDM
200
Continuous Drain
Current H
TA=25°C
TA=70°C
25
A
IDSM
IAR
20
Avalanche Current C
30
A
C
Repetitive avalanche energy L=0.3mH
EAR
135
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
5
3
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.2
44
Max
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
25
60
3
RθJA
A
RθJC
2
Alpha & Omega Semiconductor, Ltd.
AOL1442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
35
V
V
DS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
100
2.5
nA
V
VGS(th)
ID(ON)
1
1.5
100
A
4
5
5
6
9
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
V
GS=4.5V, ID=10A
DS=5V, ID=20A
7
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
40
S
V
A
IS=1A, VGS=0V
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2662 3194
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
502
375
V
GS=0V, VDS=0V, f=1MHz
1.1
1.7
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
70
34.8
13.1
18.5
9
84
42
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
11
ns
R
tD(off)
tf
30.7
9.2
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
34.5
28.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
42
34
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G.The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: Mar 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
5V
VDS=5V
4.5V
10V
4V
125°C
25°C
3.5V
VGS=3V
4
2
2.5
3
3.5
4
4.5
0
1
2
3
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
6
VGS=4.5V
ID=10A
VGS=10V
4
0.8
2
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
20
16
12
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
4
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
VDS=15V
ID=20A
Ciss
8
6
Coss
4
Crss
2
400
0
0
0
10
20
30
40
50
60
70
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
160
120
80
1µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10µs
100us
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
40
0.1
0
0.0
0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
L ⋅ ID
tA =
BV −VDD
TA=25°C
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
T
CASE (°C)
Figure 13: Power De-rating (Note B)
50
100
75
50
25
0
TA=25°C
40
30
20
10
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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