AOL1444_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1444_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1444
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1444 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4.3mΩ (VGS = 10V)
RDS(ON) < 6.3mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
G
S
drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
85
V
A
TC=25°C G
TC=100°C B
ID
73
IDM
Pulsed Drain Current
Continuous Drain
Current G
200
17
TA=25°C
TA=70°C
A
IDSM
IAR
14
C
Avalanche Current
30
A
C
Repetitive avalanche energy L=0.1mH
EAR
45
mJ
TC=25°C
100
50
PD
W
B
Power Dissipation
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
2.1
PDSM
W
A
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Symbol
Typ
19.6
48
Max
25
60
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
Steady-State
Steady-State
RθJA
A
Maximum Junction-to-Ambient
C
RθJC
1
1.5
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1444
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
0.005
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VDS=VGS ID=250µA
VGS(th)
ID(ON)
1.45
200
1.8
VGS=10V, VDS=5V
A
V
GS=10V, ID=20A
3.2
4.3
4.9
85
4.3
5.2
6.3
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=4.5V, ID=20A
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6070 7000
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
638
375
VGS=0V, VDS=0V, f=1MHz
0.45
0.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
96.4
46.4
13.6
15.6
15.7
14.2
55.5
14
115
55
nC
nC
nC
nC
ns
VGS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
21
21
75
21
38
29
V
GS=10V, VDS=15V, RL=0.75Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
24
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating. Rev1. July 2008
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Revision 2: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VDS=5V
10V
4.5V
3.5V
125°C
VGS=3V
25°C
0
1
2
3
4
5
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=20A
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
14
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
25°C
6
1.0E-03
25°C
4
1.0E-04
1.0E-05
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
8
VDS=15V
ID=20A
Ciss
7000
6000
5000
4000
3000
2000
1000
0
6
4
Coss
Crss
2
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
1000
TJ(Max)=175°C
TC=25°C
800
600
400
200
0
100µs
1ms
10ms
RDS(ON)
limited
DC
TJ(Max)=175°C
TC=25°C
1
0.1
0.1
1
10
100
0.0001 0.001
0.01
Pulse Width (s)
0.1
1
10
100
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
TA=25°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
Ton
T
Single Pulse
0.0001
RθJA=60°C/W
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1444
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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