AOL1440L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1440L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1440
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1440 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.Standard Product AOL1440 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1440L is a Green Product ordering option.
AOL1440 and AOL1440L are electrically identical.
VDS(V)=25V
ID=75A(VGS=10V)
RDS(ON)<3.2mΩ(VGS=20V)
RDS(ON)< 4.0mΩ (V = 12V)
GS
R < 5.2mΩ (V = 10V)
GS
DS(ON)
UIS Tested
Rg,Ciss,Coss,Crss Tested
UltraSO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Maximum
25
Units
V
V
VGS
±30
TC=25°C G
TC=100°C B
85
Continuous Drain
Current B,G,
A
ID
66
Pulsed Drain Current
Continuous Drain
Current G
Avalanche CurrentC
IDM
200
TA=25°C
TA=70°C
25
A
IDSM
IAR
20
30
A
Repetitive avalanche energy L=0.3mHC
EAR
135
mJ
TC=25°C
Power DissipationB
TC=100°C
75
PD
W
37
TA=25°C
5
3
PDSM
W
Power DissipationA
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
-55 to 175
°C
Parameter
Symbol
Typ
19
Max
25
55
2
Units
°C/W
°C/W
°C/W
Maximum Junction-to-AmbientA
t ≤ 10s
RθJA
Maximum Junction-to-AmbientA
Maximum Junction-to-CaseC
Steady-State
45
1.5
Steady-State
RθJC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
0.005
3
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
V
DS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±30V
100
4
nA
V
VGS(th)
ID(ON)
V
V
DS=VGS ID=250µA
2
GS=12V, VDS=5V
200
A
VGS=20V, ID=20A
VGS=12V, ID=20A
2.7
3.5
4
3.2
4
mΩ
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
V
GS=10V, ID=20A
5.2
TJ=125°C
5.6
75
0.7
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
1
V
Maximum Body-Diode Continuous Current
55
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2100
850
2400
pF
pF
pF
Ω
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
400
VGS=0V, VDS=0V, f=1MHz
0.35
1
SWITCHING PARAMETERS
Qg(12V)
Qg(10V)
Qgs
Total Gate Charge
40
33
11
14
12
19
15
8.5
42
34
50
nC
nC
nC
nC
ns
Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
VGS=10V, VDS=12.5V, RL=0.68Ω,
Turn-On Rise Time
ns
R
GEN=3Ω
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0. July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
100
80
60
40
20
0
20V
VDS=5V
12V
10V
VGS=8V
125°C
40
25°C
7
0
0
1
2
3
4
5
3
4
5
V
6
8
VDS (Volts)
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
4.5
1.4
VGS=20V
ID=20A
VGS=10V
VGS=12V
4.0
3.5
3.0
2.5
2.0
1.2
1
VGS=12V
VGS=10V
VGS=10V
VGS=12V
VGS=20V
0.8
0.6
VGS=20V
0
5
10
15
D (A)
20
25
30
-50 -25
0
25 50 75 100 125 150 175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
14
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
25°C
6
1.0E-03
25°C
4
1.0E-04
1.0E-05
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
6
8
10
12
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
14
16
18
20
VSD (Volts)
V
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
20
16
12
8
VDS=12.5V
ID=20A
Ciss
Coss
Crss
4
0
0
0
10
20
30
40
50
60
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
TJ(Max)=175°C
TC=25°C
10µs
100µ
RDS(ON)
limited
150
100
50
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0
VDS (Volts)
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
70
TA=25°C
80
60
25°C
60
40
20
50
40
30
20
10
0
150°C
0
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125 150
175
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
0.01
Ton
T
T
Single Pulse
0.0001
RθJA=55°C/W
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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