AOL1704 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1704 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1704
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
SRFETTM AOL1704 uses advanced trench
VDS (V) = 30V
ID =50A (VGS = 10V)
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
R
DS(ON) < 7.8mΩ (VGS = 10V)
DS(ON) < 9.8mΩ (VGS = 4.5V)
R
applications. Standard Product AOL1704 is Pb-free
(meets ROHS & Sony 259 specifications).
UIS Tested!
Rg,Ciss,Coss,Crss Tested
UltraSO-8TM Top View
Fits SOIC8
footprint !
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D
Bottom tab
connected to
G
drain
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
50
V
A
TC=25°CI
TC=100°C
Continuous Drain
Current B
ID
43
120
18
IDM
Pulsed Drain Current
Continuous Drain
Current H
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
TA=25°C
TA=70°C
A
IDSM
IAR
14
25
A
EAR
94
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
4.3
PDSM
W
Power Dissipation A
TA=70°C
2.8
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
24
Max
29
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case C
RθJA
A
Steady-State
Steady-State
53
64
RθJC
2.4
3.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=24V, VGS=0V
30
V
0.04
5
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
µA
V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
0.1
2.4
VGS(th)
ID(ON)
1.4
1.8
120
A
V
GS=10V, ID=20A
6.5
9.2
8
7.8
11.5
9.8
mΩ
RDS(ON)
Static Drain-Source On-Resistance
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Diode Continuous CurrentI
95
0.36
0.5
50
V
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2800
390
145
0.8
3640
1.2
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
42
19
7
50
23
Qg(4.5V)
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
6
7
VGS=10V, VDS=15V, RL=0.75Ω,
7
R
GEN=3Ω
tD(off)
tf
31
5
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
13
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16
ns
Qrr
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
θJA
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. The SOA
A
curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
I. The maximum current rating is limited by bond-wires.
Rev1: Oct. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
10V
6V
4.0V
VDS=5V
25
20
15
10
5
4.5V
90
60
30
0
3.5V
125°
25°C
VGS=3.0V
0
0
1
2
3
DS (Volts)
4
5
1
1.5
2
2.5
GS(Volts)
3
3.5
4
V
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
11
10
9
1.8
1.6
1.4
1.2
1
ID=20A
VGS=10V
VGS=4.5V
VGS=4.5V
8
7
6
VGS=10V
5
4
0.8
0
10
20
30
40
50
60
0
30
60
90
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
120
150
180
210
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
16
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
14
12
10
8
25°C
125°C
6
25°C
4
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.50E-09
10
8
4.00E-09
3.50E-09
3.00E-09
2.50E-09
2.00E-09
1.50E-09
1.00E-09
5.00E-10
0.00E+00
VDS=15V
ID=20A
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
40
50
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
120
1000.0
100.0
10.0
1.0
110
100
90
10µs
100µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
1ms
limited
DC
80
10ms
70
TJ(Max)=175°C
TC=25°C
60
0.1
50
0.0
40
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJc.RθJc
RθJC=3°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
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AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
60
50
40
30
20
10
0
TC=25°C
TC=150°C
0
25
50
75
100
125
150
175
1.0E-07
1.0E-06
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1.0E-05
1.0E-04
1.0E-03
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
50
40
30
20
10
0
160
140
120
100
80
TJ(Max)=150°C
TA=25°C
60
40
20
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
Single Pulse
0.001
T
Ton
10
T
RθJA=64°C/W
0.001
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
0.8
1.0E-02
20A
0.7
VDS=24V
0.6
10A
5A
0.5
0.4
0.3
0.2
0.1
0
1.0E-03
1.0E-04
1.0E-05
VDS=12V
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 18: Diode Forward voltage vs. Junction
Temperature
12
2.40
2.10
48
40
32
24
16
8
18
15
12
9
di/dt=1000A/us
125ºC
25ºC
di/dt=1000A/us
11
10
9
1.80
1.50
1.20
0.90
0.60
0.30
0.00
125ºC
trr
8
25ºC
Qrr
25ºC
7
S
125ºC
6
6
Irm
5
125ºC
25ºC
3
4
0
5
10
15
20
25
30
0
0
0
5
10
15
Is (A)
20
25
30
Is (A)
Figure 20: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
40
32
24
16
8
15
18
16
14
12
10
8
2.50
Is=20A
125ºC
125ºC
25ºC
Is=20A
12
9
2.00
25ºC
1.50
1.00
0.50
0.00
125ºC
25ºC
6
trr
S
125ºC
25ºC
Qrr
3
6
Irm
0
0
4
0
200
400
600
800
1000
1200
0
200
400
600
800
1000 1200
di/dt (A)
di/dt (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 22: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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