AON4803 [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AON4803 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
VDS (V) = -20V
ID = -3.4A
The AON4803 uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltage as low as 1.8V. This
device is suitable for use as a load switch or in
PWM applications. Standard Product AON4803
is Pb-free (meets ROHS & Sony 259
specifications).
(VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
RDS(ON) < 165mΩ (VGS = -1.8V)
D2
S2
D1
1
2
3
4
8
7
6
5
S1
D1
D1
G1
S2
G2
D2
D2
G2
G1
S1
DFN3X2-8L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
-20
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±8
TA=25°C
TA=70°C
-3.4
ID
Continuous Drain Current A
Pulsed Drain Current B
A
-2.7
IDM
-15
1.7
1.1
TA=25°C
TA=70°C
PD
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
75
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
51
88
28
RθJA
A
Steady-State
Steady-State
°C/W
110
35
RθJL
Alpha & Omega Semiconductor, Ltd.
AON4803
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
V
DS=-16V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
±100
-1
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.3
-15
-0.65
V
V
GS=-4.5V, VDS=-5V
GS=-4.5V, ID=-3.4A
A
73
103
100
135
7
90
mΩ
TJ=125°C
125
120
165
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
V
GS=-2.5V, ID=-2.5A
VGS=-1.8V, ID=-1.5A
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
4
S
V
A
-0.76
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
540
72
700
7.9
pF
pF
pF
Ω
V
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
49
GS=0V, VDS=0V, f=1MHz
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.1
0.6
1.6
10
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3.4A
V
GS=-4.5V, VDS=-10V, RL=2.9Ω,
12
RGEN=3Ω
tD(off)
tf
44
22
trr
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
7.5
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 0. December 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
6
5
4
3
2
1
0
-4.5V
-8V
VDS=-5V
-3.0V
-2.5V
-2.0V
VGS=-1.5V
125°C
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
180
160
140
120
100
80
1.8
1.6
1.4
1.2
1
VGS=-2.5V
ID=-2.5A
VGS=-1.8V
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
VGS=-4.5V
VGS=-4.5V
ID=-3.4A
60
0.8
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
200
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-3.4A
170
140
110
80
125°C
25°C
125°C
25°C
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
8
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS=-10V
ID=-3.4A
4
Ciss
600
3
400
2
200
Crss
1
Coss
0
0
0
2
4
6
8
0
5
10
-VDS (Volts)
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
20
15
10
5
100.0
10.0
1.0
RDS(ON)
TJ(Max)=150°C
TA=25°C
10µs
limited
TJ(Max)=150°C
TA=25°C
100µs
1ms
10ms
0.1s
1s
DC
0.1
10s
0.0
0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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