AON6400L [AOS]
Transistor;
| 型号： | AON6400L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6400L
30V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6400L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
30V
85A
ID (at VGS=10V)
< 1.4mΩ
< 1.8mΩ
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
D
S
DFN5X6
Top View
Top View
Bottom View
1
2
3
4
8
7
6
5
G
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
Continuous Drain
Current G
±20
85
TC=25°C
TC=100°C
67
A
A
Pulsed Drain Current C
400
31
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
25
IAS, IAR
90
A
EAS, EAR
405
83
mJ
TC=25°C
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
33
2.3
PDSM
W
1.45
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
55
Steady-State
Steady-State
RθJC
1.5
Rev 0 : July 2009
www.aosmd.com
Page 1 of 6
AON6400L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
1
VGS(th)
ID(ON)
1.2
1.7
2.2
V
A
400
V
GS=10V, ID=20A
1.15
1.75
1.45
140
1.4
2.1
1.8
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.65
1
Maximum Body-Diode Continuous Current
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5500 6900 8300
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
740
440
0.6
1060 1380
730
1.2
1020
1.8
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
110
55
140
70
20
32
12
13
88
32
170
84
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
16
24
20
45
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
15
44
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19
55
23
66
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design,and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : July 2009
www.aosmd.com
Page 2 of 6
AON6400L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
3V
VDS=5V
4.5V
125°C
VGS=2.5V
25°C
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
3
2
1
0
2
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
VGS=4.5V
ID=15A
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
4
3
2
1
0
1.0E+02
1.0E+01
ID=20A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
VGS (Volts)
V
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2009
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Page 3 of 6
AON6400L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
8000
6000
4000
2000
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
5
0
0
10
15
VDS (Volts)
20
25
30
0
30
60
90
120
150
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
400
350
300
250
200
150
100
50
10µs
100µs
1ms
10ms
RDS(ON)
limited
DC
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2009
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Page 4 of 6
AON6400L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
90
80
TA=25°C
70
TA=100°C
60
100
50
40
30
20
10
0
TA=150°C
TA=125°C
100
10
1
10
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
90
80
70
60
50
40
30
20
10
0
TA=25°C
1
0.0001
0.01
1
100
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
T
1
0.1
PD
0.01
0.001
Ton
Single Pulse
T
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2009
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Page 5 of 6
AON6400L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: July 2009
www.aosmd.com
Page 6 of 6
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