AON6706L [AOS]
Transistor;型号: | AON6706L |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | Transistor 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AON6706L
30V N-Channel MOSFET
TM
SRFET
General Description
Product Summary
SRFETTM AON6706L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
85A
< 4.6mΩ
< 7mΩ
100% UIS Tested
100% Rg Tested
D
Top View
1
2
3
8
7
6
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
4
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
64
A
A
IDM
215
18
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
14
IAS, IAR
43
A
EAS, EAR
92
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
55
RθJC
1.5
Rev 1: August 2009
www.aosmd.com
Page 1 of 7
AON6706L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
0.1
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.3
1.7
215
A
3.75
5.9
4.6
7.2
7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
5.5
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
60
0.45
0.7
85
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1880 2350 2820
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
340
140
0.3
480
230
0.6
630
320
0.9
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
34
17
7.6
4
42
21
50
25
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
7
11.4
10
6.7
4.5
26.5
7
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
15
12
18
ns
Qrr
12
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: August 2009
www.aosmd.com
Page 2 of 7
AON6706L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
150
120
90
60
30
0
10V
4.5V
4V
VDS=5V
5V
7V
3.5V
125°C
VGS=3V
25°C
4
0
1
2
3
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
7
2
1.8
1.6
1.4
1.2
1
6
5
4
3
2
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
5
10
15
20
25
30
I
D (A)
0
25
50
75
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
14
12
10
8
1.0E+02
ID=20A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
125°C
6
25°C
4
25°C
2
0
2
4
6
8
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
V
GS (Volts)
V
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: August 2009
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Page 3 of 7
AON6706L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
VDS=15V
ID=20A
3000
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
VDS (Volts)
20
25
30
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
100µs
1ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=1.5°C/W
T
R
0.1
0.01
PD
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: August 2009
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Page 4 of 7
AON6706L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
90
80
70
60
TA=100°C
TA=25°C
50
40
30
20
10
0
100
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
90
80
70
60
50
40
30
20
10
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=55°C/W
T
R
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: August 2009
www.aosmd.com
Page 5 of 7
AON6706L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20A
10A
VDS=30V
5A
IS=1A
VDS=15V
0
25
50
75
100
125
150
175
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
35
30
25
20
15
10
5
12
10
8
14
12
10
8
3
di/dt=800A/µs
125ºC
25ºC
125ºC
di/dt=800A/µs
2.5
2
Qrr
25ºC
125ºC
trr
6
1.5
1
6
4
125ºC
25ºC
Irm
4
S
25ºC
2
0.5
0
2
0
0
0
0
5
10
15
S (A)
20
25
30
0
5
10
15
IS (A)
20
25
30
I
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
10
18
15
12
9
2.5
2
Is=20A
Is=20A
125ºC
125ºC
25
20
15
10
5
8
6
4
2
0
trr
25ºC
125ºC
25ºC
1.5
1
Qrr
125º
6
S
25ºC
25ºC
0.5
0
3
Irm
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: August 2009
www.aosmd.com
Page 6 of 7
AON6706L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 1: August 2009
www.aosmd.com
Page 7 of 7
相关型号:
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Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8
AOS
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