AON6712 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AON6712 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6712
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
The AON6712 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AON6712 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = 30V
ID = 20A (VGS = 10V)
R
R
DS(ON) < 5.5mΩ (VGS = 10V)
DS(ON) < 6.5mΩ (VGS = 4.5V)
D
Top View
Fits SOIC8
footprint !
S
S
S
D
D
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
G
D
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B,J
30
±12
30
V
V
VGS
TC=25°C
A
TC=100°C
ID
30
IDM
Pulsed Drain Current
Continuous Drain
Current H
80
TA=25°C
TA=70°C
16
A
IDSM
IAR
13
Avalanche Current C
42
A
Repetitive avalanche energy L=0.3mH C
EAR
264
62.5
25
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
Typ
14.2
42
Max
20
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
2.0
RθJC
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6712
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=30V, VGS=0V
30
V
0.1
10
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
µA
V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
0.1
2.3
VGS(th)
ID(ON)
1.4
80
1.7
A
V
GS=10V, ID=20A
4.3
6.8
5.5
9.0
6.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
5.2
gFS
VSD
IS
Forward Transconductance
100
0.35
Diode Forward Voltage
0.5
5
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3940
590
5120
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
255
0.72
1.1
95
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
72.8
35.0
10.4
12.4
9.8
8.4
45
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL=0.83Ω,
R
ns
GEN=3Ω
tD(off)
tf
ns
10
ns
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
36
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
43
ns
Qrr
32
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C.
θJA
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsink is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. The SOA
A
curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
J. Maximum current is limited by bonding wire.
Rev0: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
30
25
20
15
10
5
VDS=5V
Vgs=10V1
Vgs=3V
125°C
25°C
VGS=2.5V
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
8
1.8
1.6
1.4
1.2
1
ID=20A
VGS=10V
7
5
4
2
VGS=4.5V
VGS=4.5V
VGS=10V
0.8
0
25
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
75
100
125
150
0
5
10
ID (A)
15
20
25
30
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
14
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
12
10
8
25°C
125°C
6
4
25°C
2
2
4
6
8
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
V
GS (Volts)
V
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=18A
Ciss
8
6
4
Crss
2
Coss
0
0
20
40
60
80
0
5
10
15
VDS (Volts)
20
25
30
Q
g (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
160
120
80
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10s
100µs
10ms
DC
1ms
0.1
TJ(Max)=150°C
TC=25°C
40
0.0
0
0.01
0.1
1
10
100
VDS (Volts)
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=2°C/W
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
60
45
30
15
0
140
120
100
80
L ⋅ ID
tA
=
BV −VDD
60
40
TA=25°C
20
0
0.00001
0.0001
0.001
0
25
50
75
100
125
150
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
TCASE (°C)
Figure 13: Power De-rating (Note B)
40
35
30
25
20
15
10
5
50
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
0
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
Pulse Width (s)
T
CASE (°C)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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