AON6973A [AOS]
30V Dual Asymmetric N-Channel AlphaMOS; 30V双路非对称N沟道AlphaMOS
| 型号： | AON6973A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual Asymmetric N-Channel AlphaMOS |
| 文件： | 总10页 (文件大小：488K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6973A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
Q1
Q2
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
VDS
30V
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
28A
32A
<5.2mΩ
<9.5mΩ
<3.9mΩ
<6.4mΩ
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Top View
Bottom View
DFN5X6B
Top View
Bottom View
PIN1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max Q1
Max Q2
Units
Drain-Source Voltage
Gate-Source Voltage
30
V
V
VGS
±20
28
±20
32
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
A
22
25
IDM
112
22
144
30
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
A
17
24
IAS
32
50
A
mJ
V
EAS
26
63
VDS Spike
100ns
VSPIKE
36
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
31
33
PD
W
Power Dissipation B
Power Dissipation A
12
13
3.6
2.3
4.3
2.7
PDSM
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
Typ Q1 Typ Q2 Max Q1 Max Q2
Units
°C/W
°C/W
°C/W
t
≤ 10s
29
56
24
50
3
35
67
4
29
60
RθJA
Steady-State
Steady-State
RθJC
3.3
3.8
Rev 0 : Nov. 2012
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Page 1 of 10
AON6973A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.2
nA
V
VGS(th)
1.4
1.8
4.3
6
5.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
7.2
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
7
9.5
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
91
0.7
1
V
Maximum Body-Diode Continuous Current G
28
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1037
441
61
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.5
6.8
3.0
3.6
5.5
3.3
18
22
10
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
4.3
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.7
17.2
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Nov. 2012
www.aosmd.com
Page 2 of 10
AON6973A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
4.5V
5V
7V
4V
VGS=3.0V
0
1
2
3
4
5
6
0
1
2
VDS (Volts)
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
10
8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
6
4
VGS=10V
VGS=4.5V
ID=20A
2
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I =20A
D
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0 : Nov. 2012
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Page 3 of 10
AON6973A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
1200
1000
800
600
400
200
0
VDS=15V
ID=20A
Ciss
8
6
4
Coss
2
Crss
0
0
5
10
15
20
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100us
1ms
100ms
DC
10
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0.01
0
0.1
1
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Nov. 2012
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Page 4 of 10
AON6973A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note F)
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=67°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Nov. 2012
www.aosmd.com
Page 5 of 10
AON6973A
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.5
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.2
nA
V
VGS(th)
1.4
1.8
3.1
4.2
4.8
85
3.9
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
5.3
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
6.4
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.48
0.6
36
V
Maximum Body-Diode Continuous Current G
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1975
913
92
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
29
13.6
5.8
40
19
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.3
7.9
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.0
ns
tD(off)
tf
27.3
6.5
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19
ns
Qrr
nC
36.7
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Nov. 2012
www.aosmd.com
Page 6 of 10
AON6973A
100
80
60
40
20
0
100
80
60
40
20
0
4V
VDS=5V
3.5V
4.5V
10V
125°C
25°C
VGS=3V
4
0
1
2
3
5
0
1
2
3
4
5
6
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
8
6
4
2
0
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
ID=20A
VGS=10V
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
8
6
4
2
ID=20A
125°C
125°C
25°C
25°C
0
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0 : Nov. 2012
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Page 7 of 10
AON6973A
10
8
3000
2500
2000
1500
1000
500
VDS=15V
ID=20A
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
0
5
10
VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
RDS(ON)
10µs
100µs
1ms
10ms
TJ(Max)=150°C
TC=25°C
DC
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.8°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Nov. 2012
www.aosmd.com
Page 8 of 10
AON6973A
40
30
20
10
0
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
TCASE (°C)
Figure 13: Current De-rating (Note F)
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Nov. 2012
www.aosmd.com
Page 9 of 10
AON6973A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0 : Nov. 2012
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Page 10 of 10
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