AOT400 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOT400 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT400 is Pb-free (meets ROHS & Sony
259 specifications). AOT400L is a Green Product
ordering option. AOT400 and AOT400L are
electrically identical.
VDS (V) = 75V
ID = 110 A
(VGS = 10V)
RDS(ON) < 4.7 mΩ (VGS = 10V)
RDS(ON) < 5.2 mΩ (VGS = 6V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
110
V
A
TC=25°C
TC=100°C
ID
110
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
200
100
A
1500
300
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
150
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
65
75
°C/W
°C/W
RθJC
0.25
0.5
Alpha & Omega Semiconductor, Ltd.
AOT400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=75V, VGS=0V
75
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
2
2.8
VGS=10V, VDS=5V
200
A
V
GS=10V, ID=30A
GS=6V, ID=30A
4.2
7.2
4.6
106
200
0.7
4.7
8.2
5.2
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
VDS=5V, ID=30A
DS=15V, ID=70A
IS=1A, VGS=0V
gFS
Forward Transconductance
Diode Forward Voltage
S
V
VSD
IS
1
V
A
Maximum Body-Diode Continuous Current
110
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
8390 10500
1060
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
450
VGS=0V, VDS=0V, f=1MHz
1.2
1.5
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
167
40
210
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=30V, ID=30A
45
29
VGS=10V, VDS=30V, RL=1Ω,
41
R
GEN=3Ω
tD(off)
tf
90
34
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
64
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
80
ns
Qrr
180
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
80
10V
6V
5V
175
150
125
100
75
VDS=5V
60
40
20
0
125°C
4.5V
25°C
50
VGS=4V
25
0
0
1
2
3
4
5
2
2.5
3
3.5
VGS(Volts)
4
4.5
5
VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6
5
4
3
2
2.2
2
VGS=6V
VGS=10V, 30A
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=6V,30A
0.8
0
20
40
60
80
100
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
ID=30A
125°C
125°C
6
25°C
25°C
4
2
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
4
8
12
16
20
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
10
VDS=30V
ID=30A
8
Ciss
8
6
6
4
2
0
4
Coss
2
Crss
0
0
40
80
120
Qg (nC)
160
200
0
15
30
45
60
75
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
1000
800
600
400
200
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
10ms
DC
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
T
RθJC=0.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
250
120
100
80
200
L ⋅ ID
60
tA
=
150
100
50
BV −VDD
40
20
0
TA=25°C
0
0.00001
0.0001
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
T
120
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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