AOT9N70 [FREESCALE]
700V, 9A N-Channel MOSFET; 700V ，9A N沟道MOSFET
| 型号： | AOT9N70 |
| 厂家： | 
Freescale |
| 描述： | 700V, 9A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：599K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
General Description
The AOT9N70 & AOTF9N70 have been fabricated using
an advanced high voltage MOSFET process that is designed to deliver high levels of performance and
By providing low RDS(on), Ciss and Crss along with
robustness in popular AC-DC applications.
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Features
800V@150℃
ID (at VGS=10V)
9A
RDS(ON) (at VGS=10V)
< 1.2Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT9N70
AOTF9N70
AOTF9N70L
Units
Drain-Source Voltage
VDS
700
V
Gate-Source Voltage
VGS
±30
9*
V
A
TC=25°C
9
9*
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
5.8
5.8*
33
5.8*
IDM
Avalanche Current C
Repetitive avalanche energy C
IAR
3.2
77
A
EAR
EAS
dv/dt
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
154
5
mJ
V/ns
W
W/ oC
236
1.8
50
27.8
0.22
PD
Power Dissipation B
Derate above 25oC
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
°C
300
°C
Parameter
Symbol
RθJA
AOT9N70
AOTF9N70
AOTF9N70L
Units
Maximum Junction-to-Ambient A,D
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
0.5
--
--
°C/W
°C/W
Maximum Junction-to-Case
RθJC
0.53
2.5
4.5
* Drain current limited by maximum junction temperature.
1/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
700
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
800
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.84
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=4.5A
VDS=40V, ID=4.5A
IS=1A,VGS=0V
3
3.9
0.94
10
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1.2
Ω
S
VSD
0.74
1
9
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
33
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1085 1357 1630
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
90
6
113
7.4
4
147
11
6
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=560V, ID=9A
2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
23
5.5
9.3
28.5
6.8
11.6
35
35
8.2
18
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=350V, ID=9A,
Turn-On Rise Time
61
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
76
Turn-Off Fall Time
48
trr
IF=9A,dI/dt=100A/µs,VDS=100V
IF=9A,dI/dt=100A/µs,VDS=100V
300
6
375
7.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
450
9
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
15
12
9
100
10
1
10V
VDS=40V
-55°C
6.5V
125°C
6V
6
25°C
3
VGS=5.5V
25
0.1
0
2
4
6
8
10
0
5
10
15
VDS (Volts)
20
30
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
3.0
3
2.5
2
2.5
2.0
1.5
1.0
0.5
0.0
VGS=10V
ID=4.5A
1.5
1
VGS=10V
0.5
0
-100
-50
0
50
100
150
200
0
4
8
12
16
20
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
1.0E+01
1.2
1.1
1
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
25°C
0.9
0.8
-100
-50
0
50
TJ (°C)
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 5:Break Down vs. Junction Temparature
Figure 6: Body-Diode Characteristics (Note E)
3/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
Ciss
VDS=560V
ID=9A
Coss
6
3
Crss
0
1
0
5
10
15
20
25
30
35
40
0.1
1
10
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
100
10
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
10µs
100µs
100µs
1
1ms
1ms
10ms
DC
10ms
DC
0.1s
1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
VDS (Volts)
1000
10000
1
10
100
VDS (Volts)
1000
10000
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF9N70 (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT9N70 (Note F)
100
10
10
10µs
8
6
4
2
0
RDS(ON)
limited
100µs
1
1ms
10ms
0.1s
DC
0.1
0.01
TJ(Max)=150°C
TC=25°C
1s
0
25
50
75
100
125
150
1
10
100
VDS (Volts)
1000
10000
TCASE (°C)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOTF9N70L (Note F)
Figure 12: Current De-rating (Note B)
4/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.53°C/W
1
0.1
PD
Ton
T
0.01
0.001
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
100
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT9N70 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=2.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=4.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F)
5/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
Gate
DUT
C
avveefformm
V
g
QQg
10V
+
VDC
+
Q
Qgd
VDC
-
V
Igg
Chargge
R
RL
Vds
VVds
9
+
Vddd
DDUT
VVgs
VDC
Rg
-
1
VVgs
VVgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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