AOT9N50 [AOS]
500V, 9A N-Channel MOSFET; 500V ，9A N沟道MOSFET
| 型号： | AOT9N50 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 500V, 9A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT9N50/AOTF9N50
500V, 9A N-Channel MOSFET
General Description
Product Summary
VDS
600V@150℃
9A
The AOT9N50 & AOTF9N50 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
R
DS(ON) (at VGS=10V)
< 0.85Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT9N50L & AOTF9N50L
Top View
TO-220F
TO-220
D
G
G
G
D
D
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT9N50
AOTF9N50
Units
Drain-Source Voltage
Gate-Source Voltage
500
±30
V
V
VGS
TC=25°C
9
9*
6*
Continuous Drain
Current
ID
TC=100°C
6.0
A
Pulsed Drain Current C
IDM
30
3.2
154
307
5
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
192
1.5
38.5
0.3
PD
Power Dissipation B
Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
°C
°C
Parameter
Symbol
RθJA
AOT9N50
65
AOTF9N50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
--
Maximum Case-to-sink A
RθCS
0.5
Maximum Junction-to-Case
RθJC
0.65
3.25
* Drain current limited by maximum junction temperature.
Rev3: July 2010
www.aosmd.com
Page 1 of 6
AOT9N50/AOTF9N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.56
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
VGS=10V, ID=4.5A
VDS=40V, ID=4.5A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.66
10
0.85
Ω
S
VSD
0.74
1
9
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
30
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
694
74
6.2
2
868
93
7.8
4
1042
112
9.4
6
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
15
4
23.6
5.2
28
6.2
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=9A
Gate Source Charge
Gate Drain Charge
8.5
10.6
19.5
47
12.7
Turn-On DelayTime
VGS=10V, VDS=250V, ID=9A,
Turn-On Rise Time
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
51.5
38.5
248
3.5
Turn-Off Fall Time
trr
IF=9A,dI/dt=100A/µs,VDS=100V
IF=9A,dI/dt=100A/µs,VDS=100V
195
2.5
300
4.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: July 2010
www.aosmd.com
Page 2 of 6
AOT9N50/AOTF9N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
100
10V
-55°C
VDS=40V
15
12
9
6.5V
10
1
6V
125°C
6
VGS=5.5V
25°C
3
0
0.1
0
5
10
15
DS (Volts)
20
25
30
2
4
6
8
10
V
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
2.0
3
2.5
2
VGS=10V
ID=4.5A
1.5
1.0
0.5
0.0
1.5
1
VGS=10V
0.5
0
0
4
8
12
16
20
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
1.2
1.1
1
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
0.9
0.8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev3: July 2010
www.aosmd.com
Page 3 of 6
AOT9N50/AOTF9N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=400V
ID=9A
Ciss
Coss
6
3
Crss
0
1
0
5
10
15
Q
20
g (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
0.1
1
10
100
V
DS (Volts)
Figure 8: Capacitance Characteristics
100
100
10
10µs
RDS(ON)
10
1
RDS(ON)
limited
10µs
limited
100µs
100µs
1ms
1ms
1
10ms
DC
10ms
DC
0.1s
1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
V
DS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT9N50 (Note F)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF9N50 (Note F)
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev3: July 2010
www.aosmd.com
Page 4 of 6
AOT9N50/AOTF9N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.65°C/W
1
0.1
PD
Ton
0.01
0.001
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT9N50 (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.25°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF9N50 (Note F)
Rev3: July 2010
www.aosmd.com
Page 5 of 6
AOT9N50/AOTF9N50
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev3: July 2010
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明