AOT9N40 [AOS]
400V,8A N-Channel MOSFET; 400V ， 8A N沟道MOSFET
| 型号： | AOT9N40 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 400V,8A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT9N40
400V,8A N-Channel MOSFET
General Description
Product Summary
VDS
The AOT9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
500V@150℃
8A
ID (at VGS=10V)
< 0.8Ω
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT9N40L
Top View
TO-220
D
G
S
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT9N40
Units
VDS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
±30
8
V
A
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
ID
TC=100°C
5
IDM
22
3.2
150
IAR
A
EAR
EAS
dv/dt
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
300
5
mJ
V/ns
W
W/ oC
132
PD
Power Dissipation B
Derate above 25oC
1
TJ, TSTG
TL
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
-55 to 150
°C
300
°C
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
AOT9N40
Units
65
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
0.5
°C/W
°C/W
RθCS
RθJC
0.95
Rev 0: Dec 2010
www.aosmd.com
Page 1 of 5
AOT9N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
400
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
500
0.4
V
BVDSS
V/ oC
ID=250µA, VGS=0V
/∆TJ
VDS=400V, VGS=0V
1
10
IDSS
µA
VDS=320V, TJ=125°C
IGSS
VGS(th)
RDS(ON)
gFS
V
V
V
V
DS=0V, VGS=±30V
DS=5V ID=250µA
GS=10V, ID=4A
DS=40V, ID=4A
±100
4.5
0.8
Gate-Body leakage current
Gate Threshold Voltage
nΑ
V
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.64
8
Ω
S
VSD
IS=1A,VGS=0V
0.75
1
8
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
22
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
500
45
2
630
73
760
100
9
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
5.7
2.6
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=320V, ID=8A
1.2
4.0
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
13.1
3.9
4.8
17
16
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=200V, ID=8A,
52
RG=25Ω
tD(off)
tf
25
30
trr
IF=8A,dI/dt=100A/µs,VDS=100V
IF=8A,dI/dt=100A/µs,VDS=100V
150
1.5
195
1.9
240
2.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec 2010
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Page 2 of 5
AOT9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
16
12
8
VDS=40V
-55°C
10V
10
1
125°C
6.5V
6V
4
25°C
VGS=5.5V
25
0
0.1
0
5
10
15
20
30
0
2
4
GS(Volts)
6
8
10
VDS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
3
2.5
2
VGS=10V
ID=4A
VGS=10V
1.5
1
0.5
0
0
3
6
9
12
15
18
-100
-50
0
50
100
150
200
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
100
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
150
200
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Dec 2010
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Page 3 of 5
AOT9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
100
10
15
12
9
VDS=320V
ID=8A
Ciss
6
Coss
3
Crss
1
0
0.1
1
10
100
0
4
8
12
16
20
V
DS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
10µs
8
6
4
2
0
10
1
RDS(ON)
limited
100µs
1ms
DC
10ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
0
25
50
75
100
125
150
1
10
100
1000
TCASE (°C)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOT9N40 (Note F)
Figure 9: Current De-rating (Note B)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.95°C/W
0.1
PD
0.01
0.001
Ton
Single Pulse
0.0001
T
0.000001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT9N40 (Note F)
Rev 0: Dec 2010
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Page 4 of 5
AOT9N40
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching TestCircuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev 0: Dec 2010
www.aosmd.com
Page 5 of 5
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