AOTF10N50FDL [AOS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AOTF10N50FDL |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTF10N50FD
500V, 10A N-Channel MOSFET with Fast Recovery Diode
General Description
Product Summary
VDS
600V@150℃
10A
The AOTF10N50FD has been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
part can be adopted quickly into new and existing offline
power supply designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.75Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF10N50FDL
Top View
TO-220F
D
G
S
D
S
G
AOTF10N50FD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOTF10N50FD
Units
Drain-Source Voltage
VDS
500
±30
10*
6*
V
Gate-Source Voltage
VGS
V
A
TC=25°C
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
IDM
33
3.8
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
216
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
433
mJ
V/ns
W
W/ oC
5
50
PD
Power Dissipation B
Derate above 25oC
0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
°C
Parameter
Symbol
RθJA
AOT10N50FD
Units
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
Maximum Junction-to-Case
RθJC
2.5
* Drain current limited by maximum junction temperature.
Rev.1.0: July 2013
www.aosmd.com
Page 1 of 6
AOTF10N50FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V, TJ=25°C
ID=10mA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
V
BVDSS
/∆TJ
V/ oC
ID=10mA, VGS=0V
0.56
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=5A
10
µA
IDSS
100
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.2
nΑ
V
2.5
3.1
0.6
10
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.75
Ω
S
VDS=40V, ID=5A
IS=10A,VGS=0V
VSD
0.93
1.6
10
33
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
820
75
5
1030 1240
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
112
10
150
15
VGS=0V, VDS=0V, f=1MHz
1.7
3.4
5.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
20
26
4.8
9.5
24
35
nC
nC
nC
ns
ns
ns
VGS=10V, VDS=400V, ID=10A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=250V, ID=10A,
Turn-On Rise Time
65
RG=25Ω
D(off)
tf
Turn-Off Fall Time
50
trr
IF=10A,dI/dt=100A/µs,VDS=100V
IF=10A,dI/dt=100A/µs,VDS=100V
116
0.3
190
0.6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2013
www.aosmd.com
Page 2 of 6
AOTF10N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
100
10
1
-55°C
VDS=40V
10V
6.5V
6V
125°C
5.5V
25°C
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
3
2.5
2
VGS=10V
ID=5A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
4
8
12
16
20
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current
and Gate Voltage
1.2
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1.1
1
125°C
25°C
0.9
0.8
0.0
0.4
0.8
1.2
1.6
-100
-50
0
50
100
150
200
TJ (oC)
VSD (Volts)
Figure 5:Break Down vs. Junction Temparature
Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: July 2013
www.aosmd.com
Page 3 of 6
AOTF10N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=400V
ID=10A
Ciss
Coss
6
Crss
3
1
0
0.1
1
10
100
0
8
16
Qg (nC)
24
32
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
10
12
10
8
RDS(ON)
limited
10µs
100µs
1ms
1
6
10ms
0.1s
1s
DC
4
0.1
0.01
2
TJ(Max)=150°C
TC=25°C
0
0
25
50
75
100
125
150
1
10
100
1000
TCASE (oC)
VDS (Volts)
Figure 10: Current De-rating (Note B)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOTF10N50FD (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=2.5°C/W
1
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N50FD (Note F)
Rev.1.0: July 2013
www.aosmd.com
Page 4 of 6
AOTF10N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
VDS=100V
IF=10A
AOTF10N50FD
10
dI/dt=100A/µs
5
0
-5
-10
-15
AOT9N50
400
-800
-600
-400
-200
0
200
600
800
1000
1200
Trr (nS)
Figure 12: Diode Recovery Characteristics
Rev.1.0: July 2013
www.aosmd.com
Page 5 of 6
AOTF10N50FD
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev.1.0: July 2013
www.aosmd.com
Page 6 of 6
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