BLV99 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLV99 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLV99
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV99 is a Common Emitter
Device Designed for Amplifier
Applications up to 860 MHz.
FEATURES INCLUDE:
PACKAGE STYLE 205 4L STUD
• Gold Metallization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
300 mA
45 V
IC
VCBO
VCEO
VEBO
PDISS
TJ
25 V
3.5 V
5.3 W @ TC = 25 °C
-65 °C to +200 °C
-65 °Cto +150 °C
33 °C/W
TSTG
θJC
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1.0mA
IC = 10 mA
IE = 1.0 mA
VEB = 5.0 V
VCE = 5 V
45
V
BVCER
BVEBO
ICBO
45
V
RBE = 10 Ω
3.5
V
1.0
3.5
mA
---
hFE
IC = 100 mA
20
COB
PG
VCB = 24 V
f = 1.0 MHz
pF
dB
VCE = 20 V
VCE = 20 V
Pout = 0.5 W
IC = 150 mA
IC = 150 mA
f = 860 MHz
f = 860 MHz
12
IMD1
-58
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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