CBSL30 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL30 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The ASI CBSL30 is Designed for
A
B
C
.040x45°
2XØ.130
4X .025 R
FEATURES:
.115
D
.430
·
E
·
F
.125
I
G
H
· Omnigold™ Metalization System
L
K
J
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
7.5 A
48V
IC
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
25 V
3.5 V
88 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
3.0 OC/W
J
K
L
TSTG
qJC
ORDER CODE: ASI10582
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
BVCER
BVCEO
BVEBO
ICBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 40 mA
IC = 40 mA
IE = 10 mA
VCE = 24 V
VCE = 20 V
48
30
25
3.5
10
15
55
40
28
5.0
---
---
---
V
V
RBE = 150 W
---
---
V
---
mA
---
IC = 2.0 A
40
100
hFE
VCB = 25 V
f = 1.0 MHz
50
---
COB
pF
PG
VCE = 25 V
ICQ = 150 mA
f = 860 MHz
7.5
dB
IMD3
POUT = 30 W
f1 = 860.0 MHz
f2 = 860.1 MHz
-35
dBc
VCE = 25 V
VCE = 25 V ± 20%
VSWR = 20:1
VSWR = 10:1
No Degradation in
Output Device
Typ.
Typ.
Typ.
VSWR1
No Degradation in
Output Device
VCE = 25 V ± 20%
PIN = PIN (norm) +3 dB
VSWR = 5:1
VSWR2
OVD
VCE = 25 V
VCE = 25 V ± 20%
PIN (norm) = +5 Db
PIN (norm) = +3 dB
No Degradation in
Output Device
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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