STN2907AS [AUK]
PNP Silicon Transistor; PNP硅晶体管
| 型号： | STN2907AS |
| 厂家： | 
AUK CORP |
| 描述： | PNP Silicon Transistor |
| 文件： | 总3页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2907AS
Semiconductor
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Large collector current
• Low collector saturation voltage
• Complementary pair with STN2222AS
Ordering Information
Type NO.
Marking
WA
Package Code
SOT-23
STN2907AS
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
1
3
2
0.2 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2058-001
1
STN2907AS
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-60
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
-50
V
-5
V
Collector current
-600
350
mA
mW
°C
*
Collector dissipation
PC
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150
°C
* : Package mounted on 99.5% Alumina 10×8×0.1mm.
Electrical Characteristics
(Ta=25°C)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=-10µA, IE=0
-60
-50
-5
-
-
-
V
IC=-10mA, IB=0
-
-
V
IE=-10µA, IC=0
-
-
-10
-
V
VCB=-60V, IE=0
-
nA
-
DC current gain
hFE
VCE=-10V, IC=-10mA
IC=-150mA, IB=-15mA
VCE=-20V, IC=-20mA
VCB=-10V, IE=0, f=1MHz
75
-
-
Collector-Emitter saturation voltage
Transition frequency
VCE(sat)
fT
-
-0.4
-
V
250
-
-
MHz
pF
Collector output capacitance
Cob
6.0
-
KST-2058-001
2
STN2907AS
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 1 PC - Ta
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE
-
IC
Fig. 6 hFE
-
IC
KST-2058-001
3
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