STN2NE10L_07 [STMICROELECTRONICS]
N-channel 100V - 0.33з -2A - SOT-223; N沟道100V - 0.33Ω -2A - SOT- 223
| 型号： | STN2NE10L_07 |
| 厂家： | 
ST |
| 描述： | N-channel 100V - 0.33з -2A - SOT-223 |
| 文件： | 总12页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2NE10L
N-channel 100V - 0.33Ω -2A - SOT-223
STripFET™ Power MOSFET
General features
VDSS
Type
RDS(on)
ID
(@Tjmax)
2
STN2NE10L
100V
<0.4Ω
1.8A
3
2
1
■ Exceptional dv/dt capability
■ Avalanche rugged technology
■ 100% avalanche tested
■ Low threshold drive
SOT-223
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STN2NE10L
N2NE10L
SOT-223
Tape & reel
February 2007
Rev 5
1/12
www.st.com
12
Contents
STN2NE10L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STN2NE10L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
100
20
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
1.8
1.3
7.2
2.5
0.02
6
A
ID
A
(1)
IDM
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
W/°C
V/ns
dv/dt (2)
Peak diode recovery voltage slope
TJ
Operating junction temperature
Storage temperature
150
°C
Tstg
-65 to 150
1. Pulse width limited by safe operating area
2. ISD ≤7.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX
Table 2.
Rthj-pcb
Thermal data
Thermal resistance junction-PC Board max
50
60
°C/W
°C/W
Rthj-amb Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Tl
260
°C
Table 3.
Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
1.8
20
A
Single pulse avalanche energy
EAS
mJ
(starting Tj=25°C, Id=Iar, Vdd=25V)
3/12
Electrical characteristics
STN2NE10L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
V(BR)DSS
100
V
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
10
Gate body leakage current
(VDS = 0)
VGS = 20V
IGSS
100
3
nA
V
VDS= VGS, ID = 250µA
VGS(th) Gate threshold voltage
1
1.7
VGS= 10V, ID= 1A
VGS= 5V, ID= 1A
0.33
0.38
0.4
Ω
Ω
Static drain-source on
resistance
RDS(on)
0.45
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
VDS>ID(on) x RDS(on)max,
ID=1A
(1)
gfs
Forward transconductance
1
3
S
Input capacitance
Output capacitance
Ciss
Coss
Crss
345
45
pF
pF
pF
VDS =25V, f=1 MHz, VGS=0
Reverse transfer
capacitance
20
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=80V, ID = 7A
VGS =5V
10
5
14
nC
nC
nC
(see Figure 13)
4
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max. Unit
VDD=50 V, ID=3.5A,
RG=4.7Ω, VGS=5V
(see Figure 14)
td(on)
tr
Turn-on delay time
rise time
7
ns
ns
17
VDD=50 V, ID=3.5A,
td(off)
tf
Turn-off-delay time
fall time
22
8
ns
ns
RG=4.7Ω, VGS=5V
(see Figure 14)
tr(Voff)
Off-voltage Rise Time
Fall Time
VDD=80 V, ID=7A,
RG=4.7Ω, VGS=5V
(see Figure 14)
8
9
ns
ns
ns
tf
Cross-over Time
19
tc
4/12
STN2NE10L
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
2
8
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
ISD=2A, VGS=0
Forward on voltage
1.5
V
VSD
trr
ISD=7 A,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
75
190
5
ns
nC
A
Qrr
di/dt = 100A/µs,
VDD=30 V, Tj=150°C
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STN2NE10L
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/12
STN2NE10L
Electrical characteristics
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
STN2NE10L
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STN2NE10L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STN2NE10L
SOT-223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
91.7
a
b
4.6
182.3
23.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
10/12
STN2NE10L
Revision history
5
Revision history
Table 8.
Date
Revision history
Revision
Changes
19-Oct-2005
05-March-2006
19-Sep-2006
01-Feb-2007
2
3
4
5
Preliminary datasheet
Modified value on Table 4
New template, no content change
Typo mistake on Table 1.
11/12
STN2NE10L
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