STN2NE10 [STMICROELECTRONICS]
N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET; N - CHANNEL 100V - 0.33欧姆 - 2A - SOT- 223的STripFET功率MOSFET
| 型号： | STN2NE10 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2NE10
®
N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STN2NE10
100 V
< 0.4 Ω
2 A
■
■
■
■
■
TYPICAL RDS(on) = 0.33 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
2
3
CHARACTERIZATION
2
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size " stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
100
V
V
100
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
± 20
V
o
Drain Current (continuous) at Tc = 25 C
2
A
o
ID
Drain Current (continuous) at Tc = 100 C
1.3
A
I
DM(•)
Drain Current (pulsed)
8
2.5
A
o
Ptot
Total Dissipation at Tc = 25 C
W
Derating Factor
0.02
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
6
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
New RDS (on) spec. starting from JULY 98
1/5
January 1999
STN2NE10
THERMAL DATA
Rthj-pcb
Thermal Resistance Junction-PC Board
Max
Max
50
60
oC/W
oC/W
Rthj-amb Thermal Resistance Junction-ambient
(Surface Mounted)
Tl
Maximum Lead Temperature For Soldering Purpose
260
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 25 V)
20
mJ
o
(Tcase = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
V
I
D = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
10
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON ( )
Symbol
Parameter
Test Conditions
DS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
2
3
4
V
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10 V ID = 1A
Resistance
0.33
0.4
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
2
A
V
GS = 10 V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
Min.
Typ.
Max.
Unit
gfs ( )
1
1.8
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS = 25 V f = 1 MHz VGS = 0 V
305
45
21
pF
pF
pF
2/5
STN2NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Min.
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
RG = 4.7 Ω
ID = 35 A
VGS = 10 V
7
17
ns
ns
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V ID = 7 A VGS = 10 V
14
6
4
19
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 3.5 A
25
7
ns
ns
RG =4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 16 V
RG = 4.7 Ω
ID = 80 A
VGS = 10 V
7
8
16
ns
ns
ns
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Typ.
Max.
Unit
ISD
2
8
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 2 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
75
210
5.5
ns
I
SD = 7 A
VDD = 30 V
(see test circuit, fig. 5)
di/dt = 100 A/µs
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STN2NE10
SOT-223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
91.7
a
b
4.6
182.3
23.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
4/5
STN2NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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