STN2N06 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR; N - 沟道增强型功率MOS晶体管
| 型号： | STN2N06 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 文件： | 总5页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
ADVANCE DATA
TYPE
VDSS
RDS(on)
< 0.250 Ω
IDCONT
STN2N06
60 V
2 A
■
■
■
TYPICAL RDS(on) = 0.21 Ω
AVALANCHE RUGGED TECHNOLOGY
SOT-223 CAN BE WAVE OR REFLOW
SOLDERED
2
■
AVAILABLE IN TAPE AND REEL ON
REQUEST
3
2
■
■
150 oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
1
SOT-223
APPLICATIONS
■
HARD DISK DRIVERS
SMALL MOTOR CURRENT SENSE
CIRCUITS
■
■
DC-DC CONVERTERS AND POWER
SUPPLIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
60
60
V
V
VDGR
VGS
± 20
2
V
o
ID(*)
Drain Current (continuous) at Tc = 25 C
A
o
ID(*)
Drain Current (continuous) at Tc = 100 C
1.3
A
I
DM(•)
Drain Current (pulsed)
8
A
o
Ptot
Total Dissipation at Tc = 25 C
2.7
W
Derating Factor
0.022
-65 to 150
150
W/oC
oC
oC
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area (*) Limited by package
1/5
March 1996
STN2N06
THERMAL DATA
Rthj-pcb
Thermal Resistance Junction-PC Board
Max
Max
46
60
oC/W
oC/W
Rthj-amb Thermal Resistance Junction-ambient
(Surface Mounted)
Tl
Maximum Lead Temperature For Soldering Purpose
260
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
EAS
EAR
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
2
A
Single Pulse Avalanche Energy
40
10
mJ
mJ
A
o
(starting Tj = 25 C, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
1.3
o
(Tc = 100 C, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
60
V
IDSS
IGSS
VDS = Max Rating
250
1000
µA
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
3
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
4
V
RDS(on)
Static Drain-source On VGS = 10 V ID = 1 A
0.21
0.25
0.5
Ω
Ω
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
GS = 10 V
V
GS = 10 V ID = 1 A Tc = 100oC
ID(on)
2
A
V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
Min.
Typ.
Max.
Unit
gfs ( )
0.8
1.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS = 25 V f = 1 MHz VGS = 0 V
260
90
30
340
120
40
pF
pF
pF
2/5
STN2N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V
G = 47 Ω
ID = 4 A
VGS = 10 V
14
75
20
100
ns
ns
R
(di/dt)on Turn-on Current Slope VDD = 48 V ID = 8 A
G = 47 Ω VGS = 10 V
240
A/µs
R
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V ID = 8 A VGS = 10 V
13
7
4
20
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V ID = 8 A
16
22
45
25
30
60
ns
ns
ns
R
G = 47 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
2
8
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 2 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD = 8 A
di/dt = 100 A/µs
Tj = 150 C
70
0.18
5
ns
o
VDD = 25 V
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STN2N06
SOT223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
91.7
a
b
4.6
182.3
23.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
4/5
STN2N06
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
5/5
相关型号：
©2020 ICPDF网 联系我们和版权申明