STN2NF06 [STMICROELECTRONICS]
N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET; N - CHANNEL 60V - 0.12ohm - 2A - SOT- 223的STripFET功率MOSFET
| 型号： | STN2NF06 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET |
| 文件： | 总9页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2NF06
N - CHANNEL 60V - 0.12
Ω
- 2A - SOT-223
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STN2NF06
60 V
< 0.15 Ω
2 A
■
■
■
■
■
TYPICAL RDS(on) = 0.12 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100 % AVALANCHETESTED
APPLICATION ORIENTED
2
3
CHARACTERIZATION
2
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size ” stip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
Unit
V
Drain-source Voltage (VGS = 0)
60
VDGR
VGS
ID
60
V
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
± 20
V
o
Drain Current (continuous) at Tc = 25 C
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
2
A
ID
1.8
A
IDM(• )
Ptot
8
2.5
A
o
Total Dissipation at Tc = 25 C
W
Derating Factor
0.02
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
6
Tstg
Tj
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
New RDS (on) spec. starting from JULY 98
1/9
July 1998
STN2NF06
THERMAL DATA
Rthj-pcb Thermal Resistance Junction-PC Board
Rthj-amb Thermal Resistance Junction-ambient
(Surface Mounted)
Max
Max
50
60
oC/W
oC/W
Tl
Maximum Lead Temperature For Soldering Purpose
260
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2
A
EAS
Single Pulse Avalanche Energy
20
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
10
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2
3
4
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10 V ID = 6A
Resistance
0.12
0.15
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
2
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
Min.
Typ.
Max.
Unit
gfs ( )
1
3
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 V
760
100
30
pF
pF
pF
2/9
STN2NF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V
RG = 4.7 Ω
ID = 6 A
VGS = 10 V
10
35
ns
ns
(di/dt)on Turn-on Current Slope VDD = 25 V
ID = 6 A
200
A/µs
RG = 4.7 Ω
VGS = 10 V
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 40 V
ID = 12 A VGS = 10 V
20
5
7
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V ID = 12 A
RG = 4.7 Ω VGS = 10 V
7
18
30
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(• )
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
VSD ( ) Forward On Voltage
ISD = 2 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
65
0.18
5.5
ns
ISD = 12 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
STN2NF06
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
STN2NF06
CapacitanceVariations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
STN2NF06
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 2: Unclamped Inductive Waveform
6/9
STN2NF06
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
7/9
STN2NF06
SOT-223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
91.7
a
b
4.6
182.3
23.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
8/9
STN2NF06
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical componentsin life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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