CXXXTR2227-SXX00 [CREE]
Rectangular LED Rf Performance Low Forward Voltage - 3.3 V Typical at 20 mA; 矩形LED射频性能低正向电压 - 3.3 V时典型20毫安
| 型号： | CXXXTR2227-SXX00 |
| 厂家： | 
CREE, INC |
| 描述： | Rectangular LED Rf Performance Low Forward Voltage - 3.3 V Typical at 20 mA |
| 文件： | 总5页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cree® TR2227™ LEDs
Data Sheet
CxxxTR2227-Sxx00
Cree’sꢀTR™ꢀLEDsꢀareꢀtheꢀnewestꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀInGaNꢀmaterialsꢀ
withꢀCree’sꢀproprietaryꢀdeviceꢀtechnologyꢀandꢀsiliconꢀcarbideꢀsubstratesꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀtheꢀLCDꢀsideviewꢀ
market.ꢀTheꢀTRꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀsideviewꢀmarketꢀwhileꢀdeliveringꢀaꢀlowꢀforwardꢀvoltageꢀresultingꢀ
inꢀaꢀveryꢀbrightꢀandꢀhighlyꢀefficientꢀsolutionꢀforꢀtheꢀ0.4-mm,ꢀ0.6-mmꢀandꢀ0.8-mmꢀsideviewꢀmarket.ꢀTheꢀdesignꢀisꢀ
optimallyꢀsuitedꢀforꢀindustryꢀstandardꢀsideviewꢀpackagesꢀasꢀitꢀisꢀdieꢀattachableꢀwithꢀclearꢀepoxyꢀandꢀhasꢀtwoꢀtopꢀ
contacts,ꢀconsistentꢀwithꢀindustryꢀstandardꢀpackaging.
FEATURES
APPLICATIONS
•ꢀ RectangularꢀLEDꢀRfꢀPerformance
−ꢀ 450ꢀ&ꢀ460ꢀnm
•ꢀ MobileꢀBacklightingꢀ–ꢀ0.8ꢀmm,ꢀ0.6ꢀmmꢀ&ꢀ0.4ꢀmmꢀ
sideviewꢀpackages
�ꢀ TR-21™ꢀ–ꢀ21ꢀmWꢀmin.
–ꢀ 527ꢀnm
−ꢀ MobileꢀAppliances
−ꢀ DigitalꢀCameras
�ꢀ TR-06™ꢀ-ꢀ6ꢀmWꢀmin.
−ꢀ CarꢀNavigationꢀSystems
•ꢀ LCDꢀBacklightingꢀ–ꢀ0.8ꢀmm,ꢀ0.6ꢀmmꢀ&ꢀ0.4ꢀmmꢀ
sideviewꢀpackages
•ꢀ EpoxyꢀDieꢀAttach
•ꢀ LowꢀForwardꢀVoltageꢀ-ꢀ3.3ꢀVꢀTypicalꢀatꢀ20ꢀmA
•ꢀ 1000-VꢀESDꢀThresholdꢀRating
•ꢀ InGaNꢀJunctionꢀonꢀThermallyꢀConductiveꢀSiCꢀ
Substrate
−ꢀ PortableꢀPCs
−ꢀ Monitors
•ꢀ LEDꢀVideoꢀDisplays
CxxxTR2227-Sxx00 Chip Diagram
ꢀ
Bottom View
Die Cross Section
Top View
220ꢀxꢀ270ꢀμm
Backside
Anodeꢀ(+)
80ꢀμm
BottomꢀSurface
190ꢀxꢀ240ꢀμm
Junction
230ꢀxꢀ190ꢀμm
Cathodeꢀ(-)
80ꢀxꢀ80ꢀμm
tꢀ=ꢀ50ꢀμm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1&3
DCꢀForwardꢀCurrent
CxxxTR2227-Sxx00
30ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
70ꢀmA
125°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
1000ꢀV
StorageꢀTemperatureꢀRange
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2
Classꢀ2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.3
Max.
Max.
Typ.
20
C450TR2227-Sxx00
C460TR2227-Sxx00
C527TR2227-Sxx00
2.7
2.7
2.9
3.7
3.7
3.9
2
2
2
3.3
21
3.4
34
Mechanical Specifications
Description
CxxxTR2227-Sxx00
Dimension
Tolerance
±35
P-NꢀJunctionꢀAreaꢀ(μm)
ChipꢀAreaꢀ(μm)
190ꢀxꢀ230
220ꢀxꢀ270
50
±35
ChipꢀThicknessꢀ(μm)
±15
AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)
AuꢀBondꢀPadꢀThicknessesꢀ(μm)
AuꢀBondꢀPadꢀAreaꢀCathodeꢀ(μm)
BottomꢀAreaꢀꢀ(μm)
80
-5,ꢀ+15
±0.5
1.0
80ꢀxꢀ80
190ꢀxꢀ240
-5,ꢀ+15
±35
Notes:
1.ꢀ Maximumꢀ ratingsꢀ areꢀ package-dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ T-1ꢀ 3/4ꢀ packageꢀ (withꢀ Hysolꢀ OS4000ꢀ
epoxy)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀandꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀ
butꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀlimitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ
3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀ
temperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).ꢀ
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.ꢀTheꢀRAETꢀprocedureꢀisꢀ
performedꢀonꢀeachꢀdie.ꢀTheꢀESDꢀclassificationꢀofꢀClassꢀ2ꢀisꢀbasedꢀonꢀsampleꢀtestingꢀaccordingꢀtoꢀMIL-STD-883E.
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ
andꢀoperatedꢀatꢀ20ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ
areꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀ
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxy).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀ
integratingꢀsphereꢀusingꢀIlluminanceꢀE.
4.ꢀ Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR2227ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
2
CPR3EF Rev A
Standard Bins for CxxxTR2227-Sxx00
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀRadiantꢀFluxꢀandꢀDominantꢀWavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀfromꢀonlyꢀ
oneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxTR2227-Sxx00)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxTR2227-xxxx)ꢀcontainedꢀinꢀ
theꢀkit.ꢀAllꢀRadiantꢀFluxꢀ(RF)ꢀvaluesꢀandꢀallꢀdominantꢀwavelengthꢀvaluesꢀshownꢀareꢀspecifiedꢀatꢀIfꢀ=ꢀ20ꢀmA.
TR 450 nm Kits
TR-21
C450TR2227-S2100
C450TR2227-0213
C450TR2227-0209
C450TR2227-0205
C450TR2227-0214
C450TR2227-0215
C450TR2227-0211
C450TR2227-0207
C450TR2227-0216
C450TR2227-0212
C450TR2227-0208
27.0ꢀmW
24.0ꢀmW
21.0ꢀmW
C450TR2227-0210
C450TR2227-0206
455ꢀnm
445ꢀnm
447.5ꢀnm
450ꢀnm
452.5ꢀnm
Dominant Wavelength
TR 460 nm Kits
TR-21
C460TR2227-S2100
C460TR2227-0213
C460TR2227-0209
C460TR2227-0205
C460TR2227-0214
C460TR2227-0215
C460TR2227-0211
C460TR2227-0207
C460TR2227-0216
C460TR2227-0212
C460TR2227-0208
27.0ꢀmW
24.0ꢀmW
21.0ꢀmW
C460TR2227-0210
C460TR2227-0206
465ꢀnm
455ꢀnm
457.5ꢀnm
460ꢀnm
462.5ꢀnm
Dominant Wavelength
TR 527 nm Kits
TR-06
C527TR2227-S0600
C527TR2227-0213
C527TR2227-0210
C527TR2227-0207
C527TR2227-0204
C527TR2227-0201
C527TR2227-0214
C527TR2227-0215
C527TR2227-0212
C527TR2227-0209
C527TR2227-0206
C527TR2227-0203
10.0ꢀmW
9.0ꢀmW
8.0ꢀmW
7.0ꢀmW
6.0ꢀmW
C527TR2227-0211
C527TR2227-0208
C527TR2227-0205
C527TR2227-0202
520ꢀnmꢀ ꢀ
525ꢀnm
530ꢀnm
535ꢀnm
Dominant Wavelength
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR2227ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
3
CPR3EF Rev A
Characteristic Curves
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀTRꢀLEDꢀproduct.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀ
fluxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
14
12
10
8
30
25
20
15
10
5
6
4
2
0
-2
-4
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
Relative Intensity vs. Wavelength
100%
80%
60%
40%
20%
0%
150%
125%
100%
75%
50%
25%
0%
0
5
10
15
20
25
30
300
350
400
450
500
550
600
650
700
If (mA)
Wavelength
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR2227ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
4
CPR3EF Rev A
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀTRꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR2227ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
5
CPR3EF Rev A
相关型号：
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