BTA1722N3 [CYSTEKEC]
High Voltage PNP Epitaxial Planar Transistor; 高电压PNP外延平面晶体管
| 型号： | BTA1722N3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High Voltage PNP Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
High Voltage PNP Epitaxial Planar Transistor
BTA1722N3
Features
• High Breakdown Voltage:BVCEO≥-350V
• Complementary to BTC4062N3
Symbol
BTA1722N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
-350
-350
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current---continuous
Power Dissipation @TA=25℃
Junction Temperature
Storage Temperature
-500
mA
mW
°C
°C
Pd
225
Tj
Tstg
150
-55~+150
BTA1722N3
CYStek Product Specification
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min. Typ.
Max.
Unit
Test Conditions
IC=-100 A
μ
-350
-350
-5
-
-
-
-
-
V
V
V
BVCEO
BVEBO
ICBO
-
IC=-1mA
μ
IE=-10 A
-
n
A
A
-
-50
VCB=-250V
VEB=-4V
n
IEBO
VCE(sat) 1
VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
VBE(sat) 1
VBE(sat) 2
*VBE(sat) 3
VBE(on)
hFE 1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50
-0.3
-0.35
-0.5
-1.0
-0.75
-0.85
-0.9
-2
V
V
V
V
V
V
V
V
-
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-30mA
VCE=-10V,IC=-50mA
VCE=-10V,IC=-100mA
VCE=-20V, IC=-10mA, f=20MHz
VCB=-20V, IE=0A,f=1MHz
-
-
-
-
-
-
-
20
30
30
20
15
40
-
-
hFE 2
-
-
*hFE 3
200
200
-
-
*hFE 4
-
*hFE 5
-
fT
200
6
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
BTA1722N3
CYStek Product Specification
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
100
10
10000
1000
100
125℃
75℃
75℃
125℃
25℃
25℃
HFE@VCE=10V
1
VCE(SAT)@IC=10IB
10 100 1000
10
0.1
10
100
1000
0.1
1
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
250
200
150
100
50
1000
25℃
75℃
125℃
VCE(SAT)@IC=10IB
0
100
0
50
100
150
200
0.1
1
10
100
1000
Ambient Temperature --- Ta(℃ )
Collector Current---IC(mA)
BTA1722N3
CYStek Product Specification
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 4/4
SOT-23 Dimension
Marking:
A
L
3
2Z
S
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
V
G
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
0.177
0.67
1.15
2.75
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
2.80
1.20
0.89
0.30
1.70
0.013
J
K
L
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
0.085
0.32
0.85
2.10
0.25
S
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1722N3
CYStek Product Specification
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