BTB1236A3 [CYSTEKEC]
Silicon PNP Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | BTB1236A3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Silicon PNP Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C854A3
Issued Date : 2004.07.28
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
Silicon PNP Epitaxial Planar Transistor
BTB1236A3
Description
• High BVCEO
• High current capability
Symbol
Outline
BTB1236A3
TO-92
B：Base
C：Collector
E：Emitter
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
-180
-160
-5
-1.5
-3
V
V
V
A
A
0.5
A
Power Dissipation (Note)
Junction Temperature
Storage Temperature
Pd
Tj
Tstg
900
150
-55~+150
mW
°C
°C
Note : Transistor mounted on a printed-circuit board.
BTB1236A3
CYStek Product Specification
Spec. No. : C854A3
Issued Date : 2004.07.28
CYStech Electronics Corp.
Revised Date :
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min. Typ.
Max.
Unit
V
V
Test Conditions
I =-50 A, I =0
-180
-160
-
-
-
-
-
µ
C
E
BVCEO
BVEBO
ICBO
IC=-1mA, IB=0
I =-50 A, I =0
-5
-
-
-
V
µ
E
C
-1
-1
-0.6
-1.5
200
-
µA
µA
V
V
-
VCB=-160V, IE=0
VEB=-4V, IC=0
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
IEBO
-
-
-
-
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
-
-
-
-
60
30
-
-
140
27
-
-
MHz
pF
-
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
K
P
Q
60~120
82~190
120~200
BTB1236A3
CYStek Product Specification
Spec. No. : C854A3
Issued Date : 2004.07.28
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
100
10
1000
100
10
VCE=5V
VCE(SAT)@IC=10IB
1
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
On Voltage vs Collector Current
Power Derating Curve
10000
1000
100
1000
900
800
700
600
500
400
300
200
100
0
VBE(ON)@VCE=5V
1
10
100
1000
10000
0
50
100
150
200
Collector Current---IC(mA)
Ambient Temperature---TA(℃)
BTB1236A3
CYStek Product Specification
Spec. No. : C854A3
Issued Date : 2004.07.28
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
TO-92 Dimension
Marking:
α2
A
B
1
2
3
B1236
α3
C
E
D
H
G
Style: Pin 1.Emitter 2.Collector 3.Base
α1
I
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
F
*: Typical
Inches
Min. Max.
0.1704 0.1902
0.1704 0.1902
Millimeters
Inches
Min. Max.
0.0142 0.0220
Millimeters
DIM
DIM
Min.
Max.
4.83
4.83
-
0.56
*1.27
3.76
Min.
0.36
Max.
0.56
*2.54
*1.27
*5°
A
B
C
D
E
F
4.33
4.33
12.70
0.36
-
G
H
I
α1
α2
α3
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
-
-
*2°
*2°
*2°
3.36
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1236A3
CYStek Product Specification
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